Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MSQ1PG-M3/HDIODE GEN PURP 400V 1A MICROSMP Vishay General Semiconductor - Diodes Division |
4,299 |
|
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eSMP® | DO-219AD | Tape & Reel (TR) | Active | Standard | 400 V | 1A | 1.2 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 650 ns | 1 µA @ 400 V | 4pF @ 4V, 1MHz | - | - | Surface Mount | DO-219AD (MicroSMP) | -55°C ~ 175°C |
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VS-CPU6006LHN3DIODE GEN PURP 600V 30A TO247AD Vishay General Semiconductor - Diodes Division |
3,986 |
|
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FRED Pt® | TO-247-3 | Tube | Active | Standard | 600 V | 30A | 1.75 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 42 ns | 30 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AD | -55°C ~ 175°C |
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VS-35EPF06LHM3DIODE GEN PURP 600V 35A TO247AD Vishay General Semiconductor - Diodes Division |
2,809 |
|
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- | TO-247-2 | Tube | Active | Standard | 600 V | 35A | 1.46 V @ 35 A | Fast Recovery =< 500ns, > 200mA (Io) | 160 ns | 100 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AD | -40°C ~ 150°C |
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VS-E5PX6006LHN3DIODE GEN PURP 600V 60A TO247AD Vishay General Semiconductor - Diodes Division |
4,010 |
|
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FRED Pt® | TO-247-2 | Tube | Active | Standard | 600 V | 60A | 2.2 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 46 ns | 25 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AD | -55°C ~ 175°C |
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VS-E5TX1506-M3DIODE GEN PURP 600V 15A TO220AC Vishay General Semiconductor - Diodes Division |
3,624 |
|
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FRED Pt® | TO-220-2 | Tube | Active | Standard | 600 V | 15A | 2.1 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 33 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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VS-E5TX1506THN3DIODE GEN PURP 600V 15A TO220AC Vishay General Semiconductor - Diodes Division |
3,201 |
|
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FRED Pt® | TO-220-2 | Tube | Active | Standard | 600 V | 15A | 2.1 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 33 ns | 10 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-220AC | -55°C ~ 175°C |
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MSQ1PGHM3/HDIODE GEN PURP 400V 1A MICROSMP Vishay General Semiconductor - Diodes Division |
4,693 |
|
![]() Tabla de datos |
eSMP® | DO-219AD | Tape & Reel (TR) | Active | Standard | 400 V | 1A | 1.2 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 650 ns | 1 µA @ 400 V | 4pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | DO-219AD (MicroSMP) | -55°C ~ 175°C |
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VS-E5PH7506LHN3DIODE GEN PURP 600V 75A TO247AD Vishay General Semiconductor - Diodes Division |
3,354 |
|
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FRED Pt® | TO-247-2 | Tube | Active | Standard | 600 V | 75A | 1.7 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 57 ns | 25 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AD | -55°C ~ 175°C |
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VS-E5PX7506LHN3DIODE GEN PURP 600V 75A TO247AD Vishay General Semiconductor - Diodes Division |
3,712 |
|
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FRED Pt® | TO-247-2 | Tube | Active | Standard | 600 V | 75A | 2.2 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 48 ns | 25 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AD | -55°C ~ 175°C |
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VS-45EPF06LHM3DIODE GEN PURP 600V 45A TO247AD Vishay General Semiconductor - Diodes Division |
3,499 |
|
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- | TO-247-2 | Tube | Active | Standard | 600 V | 45A | 1.31 V @ 45 A | Fast Recovery =< 500ns, > 200mA (Io) | 180 ns | 100 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AD | -40°C ~ 150°C |