Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
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AU1FKHM3/HDIODE AVALANCHE 800V 1A DO219AB Vishay General Semiconductor - Diodes Division |
17,450 |
|
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- | DO-219AB | Tape & Reel (TR) | Active | Avalanche | 800 V | 1A | 1.85 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 1 µA @ 800 V | 8.2pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | DO-219AB (SMF) | -55°C ~ 175°C |
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AR1FJHM3/HDIODE AVALANCHE 600V 1A DO219AB Vishay General Semiconductor - Diodes Division |
17,442 |
|
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- | DO-219AB | Tape & Reel (TR) | Active | Avalanche | 600 V | 1A | 1.25 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 140 ns | 1 µA @ 600 V | 12.6pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | DO-219AB (SMF) | -55°C ~ 175°C |
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AR1FMHM3/HDIODE AVALANCHE 1KV 1A DO219AB Vishay General Semiconductor - Diodes Division |
17,200 |
|
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- | DO-219AB | Tape & Reel (TR) | Active | Avalanche | 1000 V | 1A | 1.6 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 120 ns | 1 µA @ 1000 V | 9.3pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | DO-219AB (SMF) | -55°C ~ 175°C |
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AS1FM-M3/HDIODE AVALANCHE 1KV 1.5A DO219AB Vishay General Semiconductor - Diodes Division |
17,060 |
|
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- | DO-219AB | Tape & Reel (TR) | Active | Avalanche | 1000 V | 1.5A | 1.15 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | 1.3 µs | 5 µA @ 1000 V | 8.8pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | DO-219AB (SMF) | -55°C ~ 175°C |
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AR1FDHM3/HDIODE AVALANCHE 200V 1A DO219AB Vishay General Semiconductor - Diodes Division |
10,680 |
|
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- | DO-219AB | Tape & Reel (TR) | Active | Avalanche | 200 V | 1A | 1.25 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 140 ns | 1 µA @ 200 V | 12.6pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | DO-219AB (SMF) | -55°C ~ 175°C |
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VS-2ENH02-M3/85ADIODE GEN PURP 200V 2A DO220AA Vishay General Semiconductor - Diodes Division |
9,680 |
|
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FRED Pt® | DO-220AA | Tape & Reel (TR) | Active | Standard | 200 V | 2A | 1 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 28 ns | 2 µA @ 200 V | - | - | - | Surface Mount | DO-220AA (SMP) | -55°C ~ 175°C |
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V2FM12-M3/HDIODE SCHOTTKY 120V 2A DO219AB Vishay General Semiconductor - Diodes Division |
7,016 |
|
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eSMP®, TMBS® | DO-219AB | Tape & Reel (TR) | Active | Schottky | 120 V | 2A | 960 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 65 µA @ 120 V | 130pF @ 4V, 1MHz | - | - | Surface Mount | DO-219AB (SMF) | -40°C ~ 175°C |
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BAS381-TR3DIODE SCHOTT 40V 30MA MICROMELF Vishay General Semiconductor - Diodes Division |
4,878 |
|
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- | 2-SMD, No Lead | Tape & Reel (TR) | Active | Schottky | 40 V | 30mA | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 40 V | 1.6pF @ 1V, 1MHz | Automotive | AEC-Q101 | Surface Mount | MicroMELF | 125°C (Max) |
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SE10PB-M3/84ADIODE GEN PURP 100V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,681 |
|
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eSMP® | DO-220AA | Tape & Reel (TR) | Active | Standard | 100 V | 1A | 1.05 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 780 ns | 5 µA @ 100 V | - | - | - | Surface Mount | DO-220AA (SMP) | -55°C ~ 175°C |
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VS-1ENH02-M3/84ADIODE GEN PURP 200V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,000 |
|
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FRED Pt® | DO-220AA | Tape & Reel (TR) | Active | Standard | 200 V | 1A | 920 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 28 ns | 2 µA @ 200 V | - | - | - | Surface Mount | DO-220AA (SMP) | -55°C ~ 175°C |