Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
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M3045S-M3/4WDIODE SCHOTTKY 45V 30A TO220-3 Vishay General Semiconductor - Diodes Division |
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- | TO-220-3 | Tube | Obsolete | Schottky | 45 V | 30A | 700 mV @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 45 V | 980pF @ 4V, 1MHz | - | - | Through Hole | TO-220-3 | -65°C ~ 150°C |
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MB3035S-E3/4WDIODE SCHOTTKY 35V 30A TO263AB Vishay General Semiconductor - Diodes Division |
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | Schottky | 35 V | 30A | 700 mV @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 35 V | 980pF @ 4V, 1MHz | - | - | Surface Mount | TO-263AB (D2PAK) | -65°C ~ 150°C |
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MBRB10H35-E3/45DIODE SCHOTTKY 35V 10A TO263AB Vishay General Semiconductor - Diodes Division |
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | Schottky | 35 V | 10A | 850 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 35 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -65°C ~ 175°C |
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1N4002GP-M3/54DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
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- | DO-204AL, DO-41, Axial | Tape & Reel (TR) | Obsolete | Standard | 100 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 100 V | 15pF @ 4V, 1MHz | - | - | Through Hole | DO-204AL (DO-41) | -50°C ~ 150°C |
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1N4003GPHM3/54DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
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- | DO-204AL, DO-41, Axial | Tape & Reel (TR) | Obsolete | Standard | 200 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 200 V | 15pF @ 4V, 1MHz | - | - | Through Hole | DO-204AL (DO-41) | -50°C ~ 150°C |
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MUR420-M3/73DIODE GEN PURP 200V 4A DO201AD Vishay General Semiconductor - Diodes Division |
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- | DO-201AD, Axial | Tape & Box (TB) | Active | Standard | 200 V | 4A | 890 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 200 V | - | - | - | Through Hole | DO-201AD | -65°C ~ 175°C |
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MUR440-M3/73DIODE GEN PURP 400V 4A DO201AD Vishay General Semiconductor - Diodes Division |
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- | DO-201AD, Axial | Tape & Box (TB) | Active | Standard | 400 V | 4A | 1.28 V @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 10 µA @ 400 V | - | - | - | Through Hole | DO-201AD | -65°C ~ 175°C |
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RGP02-12E-E3/53DIODE GP 1.2KV 500MA DO204AL Vishay General Semiconductor - Diodes Division |
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SUPERECTIFIER® | DO-204AL, DO-41, Axial | Tape & Box (TB) | Active | Standard | 1200 V | 500mA | 1.8 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 5 µA @ 1200 V | - | - | - | Through Hole | DO-204AL (DO-41) | -65°C ~ 175°C |
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RGP02-12E-M3/73DIODE GP 1.2KV 500MA DO204AL Vishay General Semiconductor - Diodes Division |
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SUPERECTIFIER® | DO-204AL, DO-41, Axial | Tape & Box (TB) | Obsolete | Standard | 1200 V | 500mA | 1.8 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 5 µA @ 1200 V | - | - | - | Through Hole | DO-204AL (DO-41) | -65°C ~ 175°C |
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RGP02-14E-E3/53DIODE GP 1.4KV 500MA DO204AL Vishay General Semiconductor - Diodes Division |
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SUPERECTIFIER® | DO-204AL, DO-41, Axial | Tape & Box (TB) | Active | Standard | 1400 V | 500mA | 1.8 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 5 µA @ 1400 V | - | - | - | Through Hole | DO-204AL (DO-41) | -65°C ~ 175°C |