Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
RB208RSM10STFTL1100V 15A, TO-277A, ULTRA LOW SBD Rohm Semiconductor |
0 |
|
![]() Tabla de datos |
- | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Schottky | 100 V | 15A | 850 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5.2 µA @ 100 V | - | Automotive | AEC-Q101 | Surface Mount | TO-277A | 175°C |
![]() |
RB218RSM15STFTL1150V 20A, TO-277A, ULTRA LOW SBD Rohm Semiconductor |
0 |
|
![]() Tabla de datos |
- | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Schottky | 150 V | 20A | 900 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8.3 µA @ 150 V | - | Automotive | AEC-Q101 | Surface Mount | TO-277A | 175°C |
![]() |
RB208RSM15STFTL1150V 15A, TO-277A, ULTRA LOW SBD Rohm Semiconductor |
0 |
|
![]() Tabla de datos |
- | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Schottky | 150 V | 15A | 880 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8.3 µA @ 150 V | - | Automotive | AEC-Q101 | Surface Mount | TO-277A | 175°C |
![]() |
SCS304AMC7GDIODE SIL CARB 650V 4A TO220FM Rohm Semiconductor |
0 |
|
![]() Tabla de datos |
- | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.5 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 200pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C |
![]() |
SCS304AGC16DIODE SIL CARB 650V 4A TO220ACP Rohm Semiconductor |
0 |
|
- |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.5 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 200pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACFP | 175°C |
![]() |
SCS306AMC7GDIODE SIL CARB 650V 6A TO220FM Rohm Semiconductor |
0 |
|
![]() Tabla de datos |
- | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.5 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C |
![]() |
SCS306AGC16DIODE SIL CARB 650V 6A TO220ACP Rohm Semiconductor |
0 |
|
- |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.5 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACFP | 175°C |
![]() |
SCS308AMC7GDIODE SIL CARB 650V 8A TO220FM Rohm Semiconductor |
0 |
|
![]() Tabla de datos |
- | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.5 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 400pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C |
![]() |
SCS308AGC16DIODE SIL CARB 650V 8A TO220ACP Rohm Semiconductor |
0 |
|
- |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.5 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 400pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACFP | 175°C |
![]() |
SCS312AMC7GDIODE SIL CARB 650V 12A TO220FM Rohm Semiconductor |
0 |
|
![]() Tabla de datos |
- | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.5 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 600pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C |