Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SCS310AHGC9DIODE SIL CARB 650V 10A TO220ACP Rohm Semiconductor |
361 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 500pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACP | 175°C (Max) |
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SCS308APC9DIODE SILICON CARBIDE 650V 8A Rohm Semiconductor |
125 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.5 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 400pF @ 1V, 1MHz | - | - | Through Hole | - | 175°C (Max) |
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SCS210AGHRCDIODE SIL CARB 650V 10A TO220AC Rohm Semiconductor |
792 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.55 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 365pF @ 1V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | 175°C (Max) |
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SCS310AMCDIODE SIL CARB 650V 10A TO220FM Rohm Semiconductor |
215 |
|
![]() Tabla de datos |
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 500pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C (Max) |
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SCS212AGHRCDIODE SIL CARB 650V 12A TO220AC Rohm Semiconductor |
1,778 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.55 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 240 µA @ 600 V | 438pF @ 1V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | 175°C (Max) |
|
SCS315AHGC9DIODE SIL CARB 650V 15A TO220ACP Rohm Semiconductor |
376 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 15A | - | No Recovery Time > 500mA (Io) | 0 ns | 75 µA @ 650 V | 750pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACP | 175°C (Max) |
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SCS210KGCDIODE SIL CARB 1.2KV 10A TO220AC Rohm Semiconductor |
156 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 550pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
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SCS320AHGC9DIODE SIL CARB 650V 20A TO220ACP Rohm Semiconductor |
2,710 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 20A | - | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 1000pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACP | 175°C (Max) |
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RB508FM-40FHT106DIODE SCHOTTKY 40V 80MA SOT323 Rohm Semiconductor |
892 |
|
![]() Tabla de datos |
- | SC-70, SOT-323 | Tape & Reel (TR) | Active | Schottky | 40 V | 80mA | 590 mV @ 40 mA | Small Signal =< 200mA (Io), Any Speed | - | 35 nA @ 30 V | - | Automotive | AEC-Q101 | Surface Mount | SOT-323 | 150°C |
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RRE07VTM6SFHTRDIODE GP 600V 700MA TUMD2SM Rohm Semiconductor |
635 |
|
![]() Tabla de datos |
- | 2-SMD, Flat Leads | Tape & Reel (TR) | Active | Standard | 600 V | 700mA | 1.1 V @ 700 mA | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 600 V | - | Automotive | AEC-Q101 | Surface Mount | TUMD2SM | 150°C (Max) |