Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SCS215AEGC11DIODE SIL CARBIDE 650V 15A TO247 Rohm Semiconductor |
293 |
|
![]() Tabla de datos |
- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 15A | 1.55 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 600 V | 550pF @ 1V, 1MHz | - | - | Through Hole | TO-247 | 175°C |
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RFS60TZ6SGC13DIODE GEN PURP 650V 60A TO247GE Rohm Semiconductor |
566 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Not For New Designs | Standard | 650 V | 60A | 2.3 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 10 µA @ 650 V | - | - | - | Through Hole | TO-247GE | 175°C |
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SCS210KGC17DIODE SIC 1.2KV 10A TO220ACFP Rohm Semiconductor |
397 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 550pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACFP | 175°C |
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SCS220AEGC11DIODE SIL CARBIDE 650V 20A TO247 Rohm Semiconductor |
345 |
|
![]() Tabla de datos |
- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 600 V | 730pF @ 1V, 1MHz | - | - | Through Hole | TO-247 | 175°C |
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SCS215AJHRTLLDIODE SIL CARB 650V 15A TO263AB Rohm Semiconductor |
2,008 |
|
![]() Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 15A | 1.55 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 600 V | 550pF @ 1V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-263AB | 175°C (Max) |
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SCS220AJHRTLLDIODE SIL CARB 650V 20A TO263AB Rohm Semiconductor |
2,697 |
|
![]() Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 600 V | 730pF @ 1V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-263AB | 175°C (Max) |
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SCS220KGC17DIODE SIC 1.2KV 20A TO220ACFP Rohm Semiconductor |
991 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.6 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 1200 V | 1050pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACFP | 175°C |
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RB540SM-40FHT2RDIODE SCHOTTKY 40V 200MA EMD2 Rohm Semiconductor |
6,649 |
|
![]() Tabla de datos |
- | SC-79, SOD-523 | Tape & Reel (TR) | Not For New Designs | Schottky | 40 V | 200mA | 710 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 15 µA @ 40 V | - | Automotive | AEC-Q101 | Surface Mount | EMD2 | 150°C (Max) |
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RB531SM-40FHT2RDIODE SCHOTTKY 40V 100MA EMD2 Rohm Semiconductor |
7,840 |
|
![]() Tabla de datos |
- | SC-79, SOD-523 | Tape & Reel (TR) | Not For New Designs | Schottky | 40 V | 100mA | 610 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 100 µA @ 40 V | - | Automotive | AEC-Q101 | Surface Mount | EMD2 | 125°C (Max) |
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RB551VM-40FHTE-17DIODE SCHOTTKY 40V 200MA UMD2 Rohm Semiconductor |
3,505 |
|
![]() Tabla de datos |
- | SC-90, SOD-323F | Tape & Reel (TR) | Active | Schottky | 40 V | 200mA | 430 mV @ 200 mA | Small Signal =< 200mA (Io), Any Speed | - | 300 µA @ 40 V | - | Automotive | AEC-Q101 | Surface Mount | UMD2 | 125°C (Max) |