| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
W2624NC240DIODE GEN PURP 2.4KV 2624A W5 |
3,922 |
|
Tabla de datos |
- | DO-200AC, K-PUK | Box | Active | Standard | 2400 V | 2624A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | - | - | Clamp On | W5 | - |
|
|
LS410860DIODE GP 800V 600A POW-R-BLOK |
4,186 |
|
Tabla de datos |
- | POW-R-BLOK™ Module | Bulk | Active | Standard | 800 V | 600A | 1.19 V @ 1800 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 mA @ 800 V | - | - | - | Chassis Mount | POW-R-BLOK™ Module | - |
|
|
1N8030-GADIODE SIL CARB 650V 750MA TO257 |
4,162 |
|
Tabla de datos |
- | TO-257-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 750mA | 1.39 V @ 750 mA | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 650 V | 76pF @ 1V, 1MHz | - | - | Through Hole | TO-257 | -55°C ~ 250°C |
|
JANTXV1N6843U3SCHOTTKY DIODE |
3,252 |
|
- |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
1N8031-GADIODE SIL CARBIDE 650V 1A TO276 |
4,777 |
|
Tabla de datos |
- | TO-276AA | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1A | 1.5 V @ 1 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 650 V | 76pF @ 1V, 1MHz | - | - | Through Hole | TO-276 | -55°C ~ 250°C |
|
MSASC25H45KV/TRDIODE SCHOTTKY 45V 25A THINKEY2 |
3,126 |
|
- |
- | ThinKey™2 | Tape & Reel (TR) | Active | Schottky | 45 V | 25A | 610 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 45 V | - | - | - | Surface Mount | ThinKey™2 | -55°C ~ 150°C |
|
VSKE320-20DIODE GEN PURP 2KV 320A MAGNAPAK |
2,300 |
|
Tabla de datos |
- | 3-MAGN-A-PAK™ | Bulk | Obsolete | Standard | 2000 V | 320A | - | Standard Recovery >500ns, > 200mA (Io) | - | 50 mA @ 2000 V | - | - | - | Chassis Mount | MAGN-A-PAK® | - |
|
|
1N8032-GADIODE SIL CARB 650V 2.5A TO257 |
3,122 |
|
Tabla de datos |
- | TO-257-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 2.5A | 1.3 V @ 2.5 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 650 V | 274pF @ 1V, 1MHz | - | - | Through Hole | TO-257 | -55°C ~ 250°C |
|
1N6492U4DIODE SCHOTTKY 45V 3.6A U4 |
3,708 |
|
- |
- | 3-SMD, No Lead | Bulk | Active | Schottky | 45 V | 3.6A | 560 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2 mA @ 45 V | 450pF @ 5V, 1MHz | - | - | Surface Mount | U4 | -65°C ~ 175°C |
|
R6012225XXYADIODE GP REV 2.2KV 250A DO205AB |
4,177 |
|
Tabla de datos |
- | DO-205AB, DO-9, Stud | Bulk | Discontinued at Digi-Key | Standard, Reverse Polarity | 2200 V | 250A | 1.5 V @ 800 A | Standard Recovery >500ns, > 200mA (Io) | 11 µs | 50 mA @ 2200 V | - | - | - | Chassis, Stud Mount | DO-205AB (DO-9) | -65°C ~ 175°C |
|
R9G00622XXDIODE GP 600V 2200A DO200AB |
4,761 |
|
Tabla de datos |
- | DO-200AB, B-PUK | Bulk | Discontinued at Digi-Key | Standard | 600 V | 2200A | 1.1 V @ 1500 A | Standard Recovery >500ns, > 200mA (Io) | 15 µs | 150 mA @ 600 V | - | - | - | Clamp On | DO-200AB, B-PUK | - |
|
R9G00818XXDIODE GP 800V 1800A DO200AB |
3,272 |
|
Tabla de datos |
- | DO-200AB, B-PUK | Bulk | Discontinued at Digi-Key | Standard | 800 V | 1800A | 1.2 V @ 1500 A | Standard Recovery >500ns, > 200mA (Io) | 25 µs | 150 mA @ 800 V | - | - | - | Clamp On | DO-200AB, B-PUK | - |
|
JANTXV1N5812DIODE GEN PURP 50V 20A DO203AA |
3,076 |
|
- |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 50 V | 20A | 950 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 50 V | 300pF @ 10V, 1MHz | Military | MIL-PRF-19500/478 | Stud Mount | DO-203AA (DO-4) | -65°C ~ 175°C |
|
1N6842U3DIODE SCHOTTKY 60V 10A U3 |
3,566 |
|
- |
- | 3-SMD, No Lead | Bulk | Active | Schottky | 60 V | 10A | 900 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 60 V | 400pF @ 5V, 1MHz | - | - | Surface Mount | U3 (SMD-0.5) | -65°C ~ 150°C |
|
1N6841U3DIODE SCHOTTKY 45V 10A U3 |
3,600 |
|
Tabla de datos |
- | 3-SMD, No Lead | Bulk | Active | Schottky | 45 V | 10A | 880 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 45 V | 400pF @ 5V, 1MHz | - | - | Surface Mount | U3 (SMD-0.5) | -65°C ~ 150°C |
|
1N6842DIODE SCHOTTKY 60V 10A U3 |
2,303 |
|
Tabla de datos |
- | 3-SMD, No Lead | Bulk | Active | Schottky | 60 V | 10A | 780 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 60 V | 400pF @ 10V, 1MHz | - | - | Surface Mount | U3 (SMD-0.5) | -55°C ~ 150°C |
|
1N6842/TRDIODE SCHOTTKY 60V 10A U3 |
4,719 |
|
- |
- | 3-SMD, No Lead | Tape & Reel (TR) | Active | Schottky | 60 V | 10A | 780 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 60 V | 400pF @ 10V, 1MHz | - | - | Surface Mount | U3 (SMD-0.5) | -55°C ~ 150°C |
|
W4767MC220DIODE GEN PURP 2.2KV 4755A W54 |
2,681 |
|
Tabla de datos |
- | DO-200AC, K-PUK | Box | Active | Standard | 2200 V | 4755A | 1.05 V @ 3000 A | Standard Recovery >500ns, > 200mA (Io) | 26 µs | 50 mA @ 2200 V | - | - | - | Clamp On | W54 | -40°C ~ 175°C |
|
LST776470V 33MA SMALL-SIGNAL SCHOTTKY S |
3,251 |
|
- |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
LST776570V 33MA SMALL-SIGNAL SCHOTTKY S |
3,213 |
|
- |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |