| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTXV1N6622USDIODE GEN PURP 660V 1.2A D-5A |
2,474 |
|
Tabla de datos |
- | SQ-MELF, A | Bulk | Discontinued at Digi-Key | Standard | 660 V | 1.2A | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 660 V | - | Military | MIL-PRF-19500/585 | Surface Mount | D-5A | -65°C ~ 150°C |
|
1N6541DIODE RECT ULT FAST REC A-PKG |
2,148 |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SICPT30120-BPInterface |
4,320 |
|
Tabla de datos |
- | TO-247-2 | Bulk | Last Time Buy | SiC (Silicon Carbide) Schottky | 1200 V | 30A | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 1200 V | 2259pF @ 0V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
UES1101DIODE GEN PURP 50V 2A A AXIAL |
4,153 |
|
- |
- | A, Axial | Bulk | Active | Standard | 50 V | 2A | 975 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | - | - | - | - | Through Hole | A, Axial | -55°C ~ 175°C |
|
JANTXV1N6074/TRDIODE GP 100V 850MA A AXIAL |
2,806 |
|
- |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 100 V | 850mA | 2.04 V @ 9.4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 1 µA @ 100 V | - | Military | MIL-PRF-19500/503 | Through Hole | A, Axial | -65°C ~ 155°C |
|
JANTXV1N6075/TRDIODE GEN PURP 150V 850MA A-PAK |
2,570 |
|
- |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 150 V | 850mA | 2.04 V @ 9.4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 1 µA @ 150 V | - | Military | MIL-PRF-19500/503 | Through Hole | A, Axial | -65°C ~ 155°C |
|
1N6663RECTIFIER DIODE |
2,435 |
|
Tabla de datos |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 600 V | 500mA | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 50 nA @ 600 V | - | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
SD51DIODE SCHOTTKY 45V 60A DO5 |
2,466 |
|
Tabla de datos |
- | DO-203AB, DO-5, Stud | Bulk | Active | Schottky | 45 V | 60A | 660 mV @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5 mA @ 45 V | - | - | - | Chassis, Stud Mount | DO-5 | -65°C ~ 150°C |
|
JANTXV1N6624US/TRDIODE GEN PURP 900V 1A D-5A |
3,026 |
|
Tabla de datos |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 900 V | 1A | 1.55 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 500 nA @ 150 V | 10pF @ 10V, 1MHz | Military | MIL-PRF-19500/585 | Surface Mount | D-5A | -65°C ~ 150°C |
|
JANTXV1N6624U/TRDIODE GP 990V 1A A SQ-MELF |
2,729 |
|
- |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 990 V | 1A | 1.55 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 500 nA @ 990 V | - | Military | MIL-PRF-19500/585 | Surface Mount | A, SQ-MELF | -65°C ~ 150°C |
|
JAN1N3647DIODE GP 3KV 250MA S AXIAL |
2,568 |
|
Tabla de datos |
- | S, Axial | Bulk | Discontinued at Digi-Key | Standard | 3000 V | 250mA | 5 V @ 250 mA | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1500 V | - | Military | MIL-PRF-19500/279 | Through Hole | S, Axial | -65°C ~ 150°C |
|
JANTXV1N6622US/TRDIODE GEN PURP 660V 1.2A D-5A |
2,654 |
|
Tabla de datos |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 660 V | 1.2A | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 660 V | - | Military | MIL-PRF-19500/585 | Surface Mount | D-5A | -65°C ~ 150°C |
|
JANTXV1N6622U/TRDIODE GP 660V 1.2A A SQ-MELF |
3,564 |
|
- |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 660 V | 1.2A | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 500 nA @ 660 V | - | Military | MIL-PRF-19500/585 | Surface Mount | A, SQ-MELF | -65°C ~ 150°C |
|
UES1001DIODE GEN PURP 50V 1A A AXIAL |
4,860 |
|
- |
- | A, Axial | Bulk | Active | Standard | 50 V | 1A | 975 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | - | - | - | - | Through Hole | A, Axial | -55°C ~ 175°C |
|
UES1102E3DIODE GEN PURP 100V 2.5A A AXIAL |
2,606 |
|
- |
- | Axial | Bulk | Active | Standard | 100 V | 2.5A | 975 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 2 µA @ 100 V | - | - | - | Through Hole | A, Axial | 175°C |
|
UES1101/TRDIODE GEN PURP 50V 2A A AXIAL |
2,452 |
|
- |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 50 V | 2A | 975 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | - | - | - | - | Through Hole | A, Axial | -55°C ~ 175°C |
|
JANTXV1N5554USDIODE GEN PURP 1KV 3A D-5B |
2,442 |
|
Tabla de datos |
- | SQ-MELF, E | Bulk | Discontinued at Digi-Key | Standard | 1000 V | 3A | 1.3 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 1000 V | - | Military | MIL-PRF-19500/420 | Surface Mount | D-5B | -65°C ~ 175°C |
|
JANHCE1N5809DIODE GEN PURP 100V 3A DIE |
2,854 |
|
- |
- | Die | Bulk | Active | Standard | 100 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | - | - | Surface Mount | Die | -65°C ~ 175°C |
|
JANHCE1N5807DIODE GEN PURP 50V 3A DIE |
4,944 |
|
- |
- | Die | Bulk | Active | Standard | 50 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 50 V | 60pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | Die | -65°C ~ 175°C |
|
JANHCE1N5811DIODE GEN PURP 150V 3A DIE |
2,157 |
|
- |
- | Die | Tape & Reel (TR) | Active | Standard | 150 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 60pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | Die | -65°C ~ 175°C |