| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SICU1060P-TPDIODE SIL CARBIDE 650V 10A DPAK |
3,120 |
|
Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 44 µA @ 650 V | 452pF @ 0V, 1MHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
|
1N5415USDIODE GEN PURP 50V 3A D-5B |
2,896 |
|
Tabla de datos |
- | SQ-MELF, E | Bulk | Discontinued at Digi-Key | Standard | 50 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 50 V | - | - | - | Surface Mount | D-5B | -65°C ~ 175°C |
|
SIDC46D170HX1SA2DIODE GP 1.7KV 75A WAFER |
3,120 |
|
Tabla de datos |
- | Die | Bulk | Discontinued at Digi-Key | Standard | 1700 V | 75A | 1.8 V @ 75 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1700 V | - | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
|
1N5808/TRRECTIFIER UFR,FRR |
4,915 |
|
- |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
1N5810/TRDIODE GEN PURP 6A AXIAL |
4,210 |
|
- |
- | Axial | Tape & Reel (TR) | Active | Standard | - | 6A | 875 mV @ 4 A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | - | - | Through Hole | Axial | - |
|
JAN1N4153UR-1/TRDIODE GP 75V 150MA DO213AA |
4,306 |
|
- |
- | DO-213AA | Tape & Reel (TR) | Active | Standard | 75 V | 150mA | 880 mV @ 20 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 50 nA @ 50 V | 2pF @ 0V, 1MHz | Military | MIL-PRF-19500/337 | Surface Mount | DO-213AA | -65°C ~ 175°C |
|
1N5811AUS/TRDIODE GP 150V 3A SQ-MELF B |
3,898 |
|
- |
- | SQ-MELF, B | Tape & Reel (TR) | Active | Standard | 150 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 60pF @ 10V, 1MHz | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
1N5811A/TRDIODE GP REV 150V 3A B AXIAL |
4,574 |
|
- |
- | B, Axial | Tape & Reel (TR) | Active | Standard, Reverse Polarity | 150 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 60pF @ 10V, 1MHz | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
VS-C40CP07L-M3DIODE SIL CARB 650V 20A TO220AC |
3,175 |
|
- |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 1040pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
JANTXV1N5615USDIODE GEN PURP 200V 1A D-5A |
3,154 |
|
Tabla de datos |
- | SQ-MELF, A | Bulk | Active | Standard | 200 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 nA @ 600 V | 45pF @ 12V, 1MHz | Military | MIL-PRF-19500/429 | Surface Mount | D-5A | -65°C ~ 175°C |
|
1N6662/TRDIODE GEN PURP 400V 500MA DO35 |
4,245 |
|
Tabla de datos |
- | DO-204AH, DO-35, Axial | Tape & Reel (TR) | Active | Standard | 400 V | 500mA | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 50 nA @ 400 V | - | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
1N5711UR-1/TRDIODE SCHOTTKY 50V 33MA DO213AA |
3,761 |
|
- |
- | DO-213AA | Tape & Reel (TR) | Active | Schottky | 50 V | 33mA | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 2pF @ 0V, 1MHz | - | - | Surface Mount | DO-213AA | -65°C ~ 150°C |
|
UT4020DIODE GEN PURP 200V 4A B |
4,070 |
|
- |
- | Axial | Bulk | Active | Standard | 200 V | 4A | 1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 200 V | - | - | - | Through Hole | B | -195°C ~ 175°C |
|
JANTXV1N5622/TRDIODE GEN PURP 1KV 1A |
4,067 |
|
- |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 1000 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 1 V | - | Military | MIL-PRF-19500/427 | Through Hole | A, Axial | -65°C ~ 200°C |
|
1N6471E3DIODE GEN PURP 400V 400MA DO35 |
3,123 |
|
- |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 400 V | 400mA | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 200 nA @ 400 V | - | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
|
1N6626DIODE GEN PURP 220V 1.75A AXIAL |
4,418 |
|
Tabla de datos |
- | A, Axial | Bulk | Active | Standard | 220 V | 1.75A | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 220 V | 40pF @ 10V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 150°C |
|
JANTX1N6641USDIODE GEN PURP 50V 300MA D-5B |
4,717 |
|
Tabla de datos |
- | SQ-MELF, E | Bulk | Active | Standard | 50 V | 300mA | 1.1 V @ 300 mA | Fast Recovery =< 500ns, > 200mA (Io) | 5 ns | 100 µA @ 50 V | - | Military | MIL-PRF-19500/609 | Surface Mount | D-5B | -65°C ~ 175°C |
|
1N5420USDIODE GEN PURP 600V 3A D-5B |
2,333 |
|
Tabla de datos |
- | SQ-MELF, E | Bulk | Active | Standard | 600 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 1 µA @ 600 V | - | - | - | Surface Mount | D-5B | -65°C ~ 175°C |
|
JANTXV1N5615US/TRDIODE GEN PURP 200V 1A D-5A |
4,514 |
|
- |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 200 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 nA @ 600 V | 45pF @ 12V, 1MHz | Military | MIL-PRF-19500/429 | Surface Mount | D-5A | -65°C ~ 175°C |
|
JAN1N5416US/TRDIODE GEN PURP 100V 3A |
4,571 |
|
- |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 100 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 100 V | - | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |