| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UTR62DIODE GEN PURP 600V 2A A AXIAL |
3,582 |
|
- |
- | A, Axial | Bulk | Active | Standard | 600 V | 2A | 1.1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 3 µA @ 600 V | 40pF @ 0V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
JANTX1N5419DIODE GEN PURP 500V 3A AXIAL |
2,570 |
|
Tabla de datos |
- | B, Axial | Bulk | Active | Standard | 500 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 1 µA @ 500 V | - | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
|
LSIC2SD120D10DIODE SIL CARB 1.2KV 28A TO263L |
3,104 |
|
Tabla de datos |
Gen2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 28A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 582pF @ 1V, 1MHz | - | - | Surface Mount | TO-263-2L | -55°C ~ 175°C |
|
JAN1N5420/TRDIODE GEN PURP 600V 3A B AXIAL |
2,811 |
|
Tabla de datos |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 1 µA @ 600 V | - | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
|
WBST080SCM120CGALWWBST080SCM120CGAL/NAU000/NO MARK |
2,743 |
|
- |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
LSIC2SD065C16ADIODE SIL CARB 650V 38A TO252 |
3,284 |
|
Tabla de datos |
Gen2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 38A | 1.8 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 730pF @ 1V, 1MHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
|
80EPF12DIODE GEN PURP 1.2KV 80A TO247AC |
3,189 |
|
Tabla de datos |
- | TO-247-3 | Tube | Obsolete | Standard | 1200 V | 80A | 1.35 V @ 80 A | Fast Recovery =< 500ns, > 200mA (Io) | 480 ns | 100 µA @ 1200 V | - | - | - | Through Hole | TO-247AC | -65°C ~ 175°C |
|
JANTXV1N5417/TRDIODE GEN PURP 200V 3A |
4,096 |
|
Tabla de datos |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 200 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 200 V | - | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
|
121NQ040DIODE SCHOTTKY 40V 120A D-67 |
2,909 |
|
Tabla de datos |
- | D-67 HALF-PAK | Bulk | Obsolete | Schottky | 40 V | 120A | 650 mV @ 120 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 mA @ 40 V | 5200pF @ 5V, 1MHz | - | - | Chassis Mount | D-67 HALF-PAK | - |
|
AIDW40S65C5XKSA1DIODE SIL CARB 650V 40A TO247-3 |
3,260 |
|
Tabla de datos |
CoolSiC™ | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 40A | 1.7 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 650 V | 1138pF @ 1V, 1MHz | Automotive | AEC-Q100/101 | Through Hole | PG-TO247-3-41 | -40°C ~ 175°C |
|
CDLL5819E3/TRDIODE SCHOTTKY 45V 1A DO213AB |
2,571 |
|
Tabla de datos |
- | DO-213AB, MELF (Glass) | Tape & Reel (TR) | Active | Schottky | 45 V | 1A | 490 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 45 V | 70pF @ 5V, 1MHz | - | - | Surface Mount | DO-213AB | -65°C ~ 125°C |
|
JANTX1N5419/TRDIODE GEN PURP 500V 3A |
4,077 |
|
Tabla de datos |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 500 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 1 µA @ 500 V | - | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
|
UT252DIODE GEN PURP 200V 1A A AXIAL |
4,671 |
|
- |
- | A, Axial | Bulk | Active | Standard | 200 V | 1A | 1 V @ 750 mA | Standard Recovery >500ns, > 200mA (Io) | - | 2 µA @ 200 V | - | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
JAN1N5417USDIODE GEN PURP 200V 3A B SQ-MELF |
3,121 |
|
Tabla de datos |
- | SQ-MELF, B | Bulk | Active | Standard | 200 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 200 V | - | Military | MIL-PRF-19500/411 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
JANTXV1N4248/TRDIODE GEN PURP 800V 1A |
2,593 |
|
- |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 800 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 800 V | - | Military | MIL-PRF-19500/286 | Through Hole | A, Axial | -65°C ~ 175°C |
|
GB10SLT12-220DIODE SIL CARB 1.2KV 10A TO220-2 |
4,606 |
|
- |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 1200 V | 520pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
CN5179 BK TIN/LEADDIODE GEN PURP 20V DO35 |
4,245 |
|
- |
- | DO-204AH, DO-35, Axial | Box | Obsolete | Standard | 20 V | - | 3.7 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 10 µA @ 20 V | - | - | - | Through Hole | DO-35 | -65°C ~ 150°C |
|
JANTX1N5614USDIODE GEN PURP 200V 1A D-5A |
2,410 |
|
Tabla de datos |
- | SQ-MELF, A | Bulk | Active | Standard | 200 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 200 V | - | Military | MIL-PRF-19500/437 | Surface Mount | D-5A | -65°C ~ 200°C |
|
SIC20120B-BPInterface |
3,315 |
|
Tabla de datos |
- | TO-220-2 | Bulk | Last Time Buy | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | - | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
VS-86HF80DIODE GEN PURP 800V 85A DO203AB |
4,345 |
|
Tabla de datos |
- | DO-203AB, DO-5, Stud | Bulk | Active | Standard | 800 V | 85A | 1.2 V @ 267 A | Standard Recovery >500ns, > 200mA (Io) | - | 9 mA @ 800 V | - | - | - | Chassis, Stud Mount | DO-203AB (DO-5) | -65°C ~ 180°C |