| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VS-50PFR120DIODE GP REV 1.2KV 50A DO203AB |
2,288 |
|
Tabla de datos |
- | DO-203AB, DO-5, Stud | Bulk | Active | Standard, Reverse Polarity | 1200 V | 50A | 1.4 V @ 125 A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | - | - | Chassis, Stud Mount | DO-203AB (DO-5) | -55°C ~ 180°C |
|
SCS206AMCDIODE SIL CARB 650V 6A TO220FM |
4,941 |
|
Tabla de datos |
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.55 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 600 V | 219pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C (Max) |
|
|
LSIC2SD120C05DIODE SIC 1.2KV 18.1A TO252L |
3,839 |
|
Tabla de datos |
Gen2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 18.1A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 310pF @ 1V, 1MHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
|
1N5614/TRDIODE GEN PURP 200V 1A |
2,370 |
|
Tabla de datos |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 200 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 200 V | - | - | - | Through Hole | A, Axial | -65°C ~ 200°C |
|
GKN26/04DIODE GEN PURP 400V 25A DO4 |
4,337 |
|
Tabla de datos |
- | DO-203AA, DO-4, Stud | Bulk | Obsolete | Standard | 400 V | 25A | 1.55 V @ 60 A | Standard Recovery >500ns, > 200mA (Io) | - | 4 mA @ 400 V | - | - | - | Chassis, Stud Mount | DO-4 | -40°C ~ 180°C |
|
JAN1N3613DIODE GEN PURP 600V 1A AXIAL |
3,574 |
|
Tabla de datos |
- | A, Axial | Bulk | Active | Standard | 600 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 300 V | - | Military | MIL-PRF-19500/228 | Through Hole | A, Axial | -65°C ~ 175°C |
|
JAN1N3611/TRDIODE GEN PURP 200V 1A |
2,859 |
|
Tabla de datos |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 200 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 300 V | - | Military | MIL-PRF-19500/228 | Through Hole | A, Axial | -65°C ~ 175°C |
|
1N485A/TRDIODE GEN PURP 180V 100MA DO7 |
4,574 |
|
- |
- | DO-204AA, DO-7, Axial | Tape & Reel (TR) | Active | Standard | 180 V | 100mA | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 25 nA @ 180 V | - | - | - | Through Hole | DO-7 | -65°C ~ 175°C |
|
1N485/TRDIODE GEN PURP 180V 100MA DO7 |
3,292 |
|
- |
- | DO-204AA, DO-7, Axial | Tape & Reel (TR) | Active | Standard | 180 V | 100mA | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 25 nA @ 180 V | - | - | - | Through Hole | DO-7 | -65°C ~ 175°C |
|
DSC10065DIODE SIL CARB 650V 10A TO220AC |
3,740 |
|
Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 650 V | 400pF @ 100mV, 1MHz | - | - | Through Hole | TO220AC (Type WX) | -55°C ~ 175°C |
|
VS-12FL60S05DIODE GEN PURP 600V 12A DO203AA |
3,822 |
|
Tabla de datos |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 600 V | 12A | 1.4 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 50 µA @ 600 V | - | - | - | Chassis, Stud Mount | DO-203AA (DO-4) | -65°C ~ 150°C |
|
VS-12FLR60S05DIODE GP REV 600V 12A DO203AA |
2,889 |
|
Tabla de datos |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 600 V | 12A | 1.4 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 50 µA @ 600 V | - | - | - | Chassis, Stud Mount | DO-203AA (DO-4) | -65°C ~ 150°C |
|
VS-60APU06HN3DIODE GEN PURP 600V 60A TO247AC |
3,983 |
|
Tabla de datos |
FRED Pt® | TO-247-3 | Tube | Active | Standard | 600 V | 60A | 1.68 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 81 ns | 50 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AC | -55°C ~ 175°C |
|
|
VS-16FL20S02DIODE GEN PURP 200V 16A DO203AA |
3,243 |
|
Tabla de datos |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 200 V | 16A | 1.4 V @ 16 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 50 µA @ 200 V | - | - | - | Chassis, Stud Mount | DO-203AA (DO-4) | -65°C ~ 150°C |
|
SCS306APC9DIODE SILICON CARBIDE 650V 6A |
2,269 |
|
Tabla de datos |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.5 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | - | 175°C (Max) |
|
VS-90APF06L-M3DIODE GEN PURP 600V 90A TO247AD |
2,618 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | Standard | 600 V | 90A | 1.3 V @ 90 A | Fast Recovery =< 500ns, > 200mA (Io) | 190 ns | 100 µA @ 600 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
|
VS-90EPF06L-M3DIODE GEN PURP 600V 90A TO247AD |
4,282 |
|
Tabla de datos |
- | TO-247-2 | Tube | Active | Standard | 600 V | 90A | 1.3 V @ 90 A | Fast Recovery =< 500ns, > 200mA (Io) | 190 ns | 100 µA @ 600 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
|
1N649UR-1/TRDIODE GP 600V 400MA DO213AA |
2,554 |
|
- |
- | DO-213AA | Tape & Reel (TR) | Active | Standard | 600 V | 400mA | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 50 nA @ 600 V | - | - | - | Surface Mount | DO-213AA | -65°C ~ 175°C |
|
S16BDIODE GEN PURP 100V 16A DO203AA |
3,926 |
|
Tabla de datos |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 100 V | 16A | 1.1 V @ 16 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | - | - | Chassis, Stud Mount | - | -65°C ~ 175°C |
|
S16BRDIODE GEN PURP 100V 16A DO220AA |
3,966 |
|
Tabla de datos |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 100 V | 16A | 1.1 V @ 16 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | - | - | Chassis, Stud Mount | - | -65°C ~ 175°C |