| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDB06S60CDIODE SIL CARB 600V 6A TO263-3-2 |
3,967 |
|
Tabla de datos |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 600 V | 280pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-3-2 | -55°C ~ 175°C |
|
FFSP05120ADIODE SIL CARBIDE 1.2KV TO220-2L |
2,480 |
|
Tabla de datos |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | - | 1.75 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | - | - | - | Through Hole | TO-220-2L | - |
|
SIDC11D60SIC3DIODE SIL CARB 600V 4A WAFER |
4,503 |
|
Tabla de datos |
- | Die | Bulk | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 4A | 1.9 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 150pF @ 1V, 1MHz | - | - | Surface Mount | Sawn on foil | -55°C ~ 175°C |
|
SCS212AGCDIODE SIL CARB 650V 12A TO220AC |
4,072 |
|
Tabla de datos |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.55 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 240 µA @ 600 V | 438pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
IDH09G65C5XKSA2DIODE SIL CARB 650V 9A TO220-2-1 |
4,850 |
|
Tabla de datos |
CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 9A | 1.7 V @ 9 A | No Recovery Time > 500mA (Io) | 0 ns | 160 µA @ 650 V | 270pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
1N3595-1DIODE GEN PURP 125V 150MA DO35 |
4,033 |
|
Tabla de datos |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 125 V | 150mA | 1 V @ 200 mA | Small Signal =< 200mA (Io), Any Speed | 3 µs | 1 nA @ 125 V | - | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
CDLL4148E3DIODE GEN PURP 75V 200MA DO213AA |
3,618 |
|
- |
- | DO-213AA | Bulk | Active | Standard | 75 V | 200mA | 1.2 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 500 nA @ 75 V | 4pF @ 0V, 1MHz | - | - | Surface Mount | DO-213AA | -65°C ~ 200°C |
|
CDLL2810E3DIODE SCHOTTKY 50V 75MA DO213AA |
3,989 |
|
Tabla de datos |
- | DO-213AA | Bulk | Active | Schottky | 50 V | 75mA | 1 V @ 35 mA | Small Signal =< 200mA (Io), Any Speed | - | 100 nA @ 15 V | 2pF @ 0V, 1MHz | - | - | Surface Mount | DO-213AA | -65°C ~ 150°C |
|
CDLL6676/TRDIODE SCHOTTKY 30V 200MA DO213AA |
4,090 |
|
- |
- | DO-213AA | Tape & Reel (TR) | Active | Schottky | 30 V | 200mA | 500 mV @ 200 mA | Small Signal =< 200mA (Io), Any Speed | - | 5 µA @ 30 V | 50pF @ 0V, 1MHz | - | - | Surface Mount | DO-213AA | -65°C ~ 125°C |
|
CDLL2810/TRDIODE SCHOTTKY 20V 75MA DO213AA |
3,484 |
|
Tabla de datos |
- | DO-213AA | Tape & Reel (TR) | Active | Schottky | 20 V | 75mA | 1 V @ 35 mA | Small Signal =< 200mA (Io), Any Speed | - | 100 nA @ 15 V | 2pF @ 0V, 1MHz | - | - | Surface Mount | DO-213AA | -65°C ~ 150°C |
|
VS-25FR10DIODE GEN PURP 100V 25A DO203AA |
3,150 |
|
Tabla de datos |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 100 V | 25A | 1.3 V @ 78 A | Standard Recovery >500ns, > 200mA (Io) | - | 12 mA @ 100 V | - | - | - | Chassis, Stud Mount | DO-203AA (DO-4) | -65°C ~ 175°C |
|
SD200SC100A1.T1DIODE SCHOTTKY 100V 60A DIE |
3,297 |
|
Tabla de datos |
- | Die | Tray | Active | Schottky | 100 V | 60A | 870 mV @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 100 V | 1500pF @ 5V, 1MHz | - | - | Surface Mount | Die | -55°C ~ 200°C |
|
30CPF10DIODE GEN PURP 1KV 30A TO247AC |
2,036 |
|
Tabla de datos |
- | TO-247-3 | Tube | Obsolete | Standard | 1000 V | 30A | 1.41 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 450 ns | 100 µA @ 1000 V | - | - | - | Through Hole | TO-247AC | -40°C ~ 150°C |
|
DSC06065DIODE SIL CARB 650V 6A TO220AC |
4,293 |
|
Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 225pF @ 100mV, 1MHz | - | - | Through Hole | TO220AC (Type WX) | -55°C ~ 175°C |
|
CDBJSC8650-GDIODE SIL CARB 650V 8A TO220-2 |
4,352 |
|
Tabla de datos |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 560pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
NXPSC04650D6JDIODE SIL CARBIDE 650V 4A DPAK |
3,880 |
|
Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 170 µA @ 650 V | 130pF @ 1V, 1MHz | - | - | Surface Mount | DPAK | 175°C (Max) |
|
|
FFH60UP60SDIODE GEN PURP 600V 60A TO247-2 |
4,344 |
|
Tabla de datos |
- | TO-247-2 | Tube | Obsolete | Standard | 600 V | 60A | 1.7 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 100 µA @ 600 V | - | - | - | Through Hole | TO-247-2 | -65°C ~ 150°C |
|
JANTXV1N4150-1/TRDIODE GEN PURP 50V 200MA DO35 |
2,079 |
|
- |
- | DO-204AH, DO-35, Axial | Tape & Reel (TR) | Active | Standard | 50 V | 200mA | 1 V @ 200 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 100 nA @ 50 V | - | Military | MIL-PRF-19500/231 | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
DTH6007PTDIODE 650V 60A TO247-2 |
4,367 |
|
- |
- | TO-247-2 | Tube | Not For New Designs | - | 650 V | 60A | 2.4 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 100 µA @ 650 V | - | - | - | Through Hole | TO-247-2 (Type HE) | -55°C ~ 175°C |
|
SICF10120Y-BPSCHOTTKY DIODES |
4,594 |
|
Tabla de datos |
- | TO-220-2 Isolated Tab | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.54 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 13 µA @ 1200 V | 700pF @ 0V, 1MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 175°C |