Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
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JAN1N1616RDIODE GP REV 600V 15A DO203AA Microchip Technology |
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- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 600 V | 15A | 1.5 V @ 15 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 µA @ 600 V | - | Military | MIL-PRF-19500/162 | Chassis, Stud Mount | DO-203AA (DO-4) | -65°C ~ 150°C |
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JAN1N3766RDIODE GEN PURP REV 800V 35A DO5 Microchip Technology |
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- | DO-203AB, DO-5, Stud | Bulk | Active | Standard, Reverse Polarity | 800 V | 35A | 1.4 V @ 110 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 800 V | - | Military | MIL-PRF-19500/297 | Chassis, Stud Mount | DO-5 | -65°C ~ 175°C |
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JAN1N3768RDIODE GEN PURP REV 1KV 35A DO5 Microchip Technology |
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- | DO-203AB, DO-5, Stud | Bulk | Active | Standard, Reverse Polarity | 1000 V | 35A | 1.4 V @ 110 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1000 V | - | Military | MIL-PRF-19500/297 | Chassis, Stud Mount | DO-5 | -65°C ~ 175°C |
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JANTXV1N5711UBDIODE SCHOTTKY 50V UB Microchip Technology |
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- | 4-SMD, No Lead | Bulk | Active | Schottky | 50 V | - | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 2pF @ 0V, 1MHz | Military | MIL-PRF-19500/444 | Surface Mount | UB | -65°C ~ 150°C |
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1N3492RDIODE GEN PURP REV 100V 35A DO21 Microchip Technology |
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- | DO-208AA | Bulk | Active | Standard, Reverse Polarity | 100 V | 35A | 1.1 V @ 35 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Press Fit | DO-21 | -65°C ~ 175°C |
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1N3491DIODE GEN PURP 50V 35A DO21 Microchip Technology |
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- | DO-208AA | Bulk | Active | Standard | 50 V | 35A | 1.1 V @ 35 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | - | - | Press Fit | DO-21 | -65°C ~ 175°C |
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1N3493DIODE GEN PURP 200V 35A DO21 Microchip Technology |
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- | DO-208AA | Bulk | Active | Standard | 200 V | 35A | 1.1 V @ 35 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 200 V | - | - | - | Press Fit | DO-21 | -65°C ~ 175°C |
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1N3492DIODE GEN PURP 100V 35A DO21 Microchip Technology |
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- | DO-208AA | Bulk | Active | Standard | 100 V | 35A | 1.1 V @ 35 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Press Fit | DO-21 | -65°C ~ 175°C |
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1N3495DIODE GEN PURP 400V 35A DO21 Microchip Technology |
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- | DO-208AA | Bulk | Active | Standard | 400 V | 35A | 1.1 V @ 35 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 400 V | - | - | - | Press Fit | DO-21 | -65°C ~ 175°C |
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1N3494RDIODE GEN PURP REV 300V 35A DO21 Microchip Technology |
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- | DO-208AA | Bulk | Active | Standard, Reverse Polarity | 300 V | 35A | 1.1 V @ 35 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 300 V | - | - | - | Press Fit | DO-21 | -65°C ~ 175°C |