Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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JANHCA1N6761DIODE SCHOTTKY 100V 1A DO41 Microchip Technology |
2,487 |
|
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- | DO-204AL, DO-41, Axial | Tape & Reel (TR) | Active | Schottky | 100 V | 1A | 690 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 100 V | - | - | - | Through Hole | DO-41 | -55°C ~ 125°C |
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JANS1N5802DIODE GEN PURP 50V 2A A AXIAL Microchip Technology |
2,969 |
|
- |
- | A, Axial | Bulk | Active | Standard | 50 V | 2A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | - | - | Military | MIL-PRF-19500/477 | Through Hole | A, Axial | -65°C ~ 175°C |
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JANS1N5804DIODE GEN PURP 100V 2A A AXIAL Microchip Technology |
4,786 |
|
- |
- | A, Axial | Bulk | Active | Standard | 100 V | 2A | 975 mV @ 2.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | - | - | Military | MIL-PRF-19500/477 | Through Hole | A, Axial | -65°C ~ 175°C |
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JANS1N6643USDIODE GP 50V 300MA B SQ-MELF Microchip Technology |
4,023 |
|
- |
- | SQ-MELF, B | Bulk | Active | Standard | 50 V | 300mA | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 6 ns | - | 5pF @ 0V, 1MHz | Military | MIL-PRF-19500/578 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
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JANS1N6643UDIODE GEN PURP 125V 300MA D-5B Microchip Technology |
3,758 |
|
- |
- | SQ-MELF, E | Bulk | Active | Standard | 125 V | 300mA | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 6 ns | 500 nA @ 150 V | 5pF @ 0V, 1MHz | Military | MIL-PRF-19500/578 | Surface Mount | D-5B | -65°C ~ 175°C |
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JANS1N5804/TRDIODE GEN PURP 100V 2A A AXIAL Microchip Technology |
4,721 |
|
![]() Tabla de datos |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 100 V | 2A | 975 mV @ 2.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | - | - | Military | MIL-PRF-19500/477 | Through Hole | A, Axial | -65°C ~ 175°C |
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JANS1N5802/TRDIODE GEN PURP 50V 2A A AXIAL Microchip Technology |
4,328 |
|
![]() Tabla de datos |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 50 V | 2A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | - | - | Military | MIL-PRF-19500/477 | Through Hole | A, Axial | -65°C ~ 175°C |
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JANS1N5806/TRDIODE GEN PURP 150V 1A Microchip Technology |
2,477 |
|
![]() Tabla de datos |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 150 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 150 V | 25pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Through Hole | A, Axial | -65°C ~ 175°C |
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1N6078USDIODE GEN PURP 150V 6A D-5B Microchip Technology |
4,744 |
|
![]() Tabla de datos |
- | SQ-MELF, E | Bulk | Active | Standard | 150 V | 6A | 1.76 V @ 18.8 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | - | - | - | Surface Mount | D-5B | -65°C ~ 155°C |
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1N6079USDIODE GEN PURP 50V 2A G-MELF Microchip Technology |
4,942 |
|
![]() Tabla de datos |
- | SQ-MELF, G | Bulk | Active | Standard | 50 V | 2A | 1.5 V @ 37.7 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 10 µA @ 50 V | - | - | - | Surface Mount | G-MELF (D-5C) | -65°C ~ 155°C |