Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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JANTXV1N5711-1/TRDIODE SCHOTTKY 50V 33MA DO35 Microchip Technology |
4,531 |
|
- |
- | DO-204AH, DO-35, Axial | Tape & Reel (TR) | Active | Schottky | 50 V | 33mA | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 2pF @ 0V, 1MHz | Military | MIL-PRF-19500/444 | Through Hole | DO-204AH (DO-35) | -65°C ~ 150°C |
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1N5807URSDIODE GEN PURP 50V 3A SQ-MELF B Microchip Technology |
3,878 |
|
- |
- | SQ-MELF, B | Bulk | Active | Standard | 50 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 50 V | 60pF @ 10V, 1MHz | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
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1N5809URSDIODE GP 100V 3A SQ-MELF B Microchip Technology |
4,509 |
|
- |
- | SQ-MELF, B | Bulk | Active | Standard | 100 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
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1N5811URSDIODE GP 150V 3A SQ-MELF B Microchip Technology |
2,907 |
|
- |
- | SQ-MELF, B | Bulk | Active | Standard | 150 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 60pF @ 10V, 1MHz | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
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JANS1N5614DIODE GEN PURP 200V 1A A AXIAL Microchip Technology |
3,170 |
|
- |
- | A, Axial | Bulk | Active | Standard | 200 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 200 V | - | Military | MIL-PRF-19500/427 | Through Hole | A, Axial | -65°C ~ 200°C |
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JANS1N5614/TRDIODE GEN PURP 200V 1A A AXIAL Microchip Technology |
3,880 |
|
- |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 200 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 200 V | - | Military | MIL-PRF-19500/427 | Through Hole | A, Axial | -65°C ~ 200°C |
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1N6079DIODE GEN PURP 50V 2A AXIAL Microchip Technology |
4,565 |
|
![]() Tabla de datos |
- | A, Axial | Bulk | Active | Standard | 50 V | 2A | 1.5 V @ 37.7 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 10 µA @ 50 V | - | - | - | Through Hole | A, Axial | -65°C ~ 155°C |
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1N6079/TRDIODE GEN PURP 50V 2A Microchip Technology |
4,552 |
|
![]() Tabla de datos |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 50 V | 2A | 1.5 V @ 37.7 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 10 µA @ 50 V | - | - | - | Through Hole | A, Axial | -65°C ~ 155°C |
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1N3671ADIODE GEN PURP 800V 12A DO203AA Microchip Technology |
2,099 |
|
![]() Tabla de datos |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 800 V | 12A | 1.35 V @ 38 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 800 V | - | - | - | Stud Mount | DO-203AA (DO-4) | -65°C ~ 200°C |
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1N1202STANDARD RECTIFIER Microchip Technology |
3,842 |
|
![]() Tabla de datos |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 200 V | 12A | 1.2 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 200 V | - | - | - | Stud Mount | DO-4 (DO-203AA) | -65°C ~ 200°C |