Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1N6858UR-1/TRDIODE SCHOTTKY 50V 75MA DO213AA Microchip Technology |
3,639 |
|
- |
- | DO-213AA | Tape & Reel (TR) | Active | Schottky | 50 V | 75mA | 650 mV @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 4.5pF @ 0V, 1MHz | - | - | Surface Mount | DO-213AA | -65°C ~ 150°C |
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CDLL6858/TRDIODE SCHOTTKY 50V 75MA DO213AA Microchip Technology |
4,988 |
|
- |
- | DO-213AA | Tape & Reel (TR) | Active | Schottky | 50 V | 75mA | 650 mV @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 4.5pF @ 0V, 1MHz | - | - | Surface Mount | DO-213AA | -65°C ~ 150°C |
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JANTXV1N6641USDIODE GEN PURP 50V 300MA D-5D Microchip Technology |
3,022 |
|
![]() Tabla de datos |
- | SQ-MELF, D | Bulk | Active | Standard | 50 V | 300mA | 1.1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 5 ns | 100 nA @ 50 V | - | Military | MIL-PRF-19500/609 | Surface Mount | D-5D | -65°C ~ 175°C |
|
1N6491DIODE GEN PURP 600V 400MA DO35 Microchip Technology |
4,148 |
|
- |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 600 V | 400mA | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 50 nA @ 600 V | - | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
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JANTXV1N3614DIODE GEN PURP 800V 1A A AXIAL Microchip Technology |
3,671 |
|
![]() Tabla de datos |
- | A, Axial | Bulk | Active | Standard | 800 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 800 V | - | Military | MIL-PRF-19500/228 | Through Hole | A, Axial | -65°C ~ 175°C |
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JANTXV1N4946/TRDIODE GEN PURP 600V 1A Microchip Technology |
3,547 |
|
![]() Tabla de datos |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 1 µA @ 600 V | 25pF @ 12V, 1MHz | Military | MIL-PRF-19500/359 | Through Hole | A, Axial | -65°C ~ 175°C |
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JANTXV1N5804USDIODE GEN PURP 100V 1A D-5A Microchip Technology |
3,999 |
|
![]() Tabla de datos |
- | SQ-MELF, A | Bulk | Discontinued at Digi-Key | Standard | 100 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 100 V | 25pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | D-5A | -65°C ~ 175°C |
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CDLL6857DIODE SCHOTTKY 16V 150MA DO213AA Microchip Technology |
4,353 |
|
- |
- | DO-213AA | Bulk | Active | Schottky | 16 V | 150mA | 750 mV @ 35 mA | Small Signal =< 200mA (Io), Any Speed | - | 150 nA @ 16 V | 4.5pF @ 0V, 1MHz | Military | MIL-PRF-19500/444 | Surface Mount | DO-213AA | -65°C ~ 150°C |
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MSC030SDA070BCTDIODE SIL CARB 700V 60A TO247-3 Microchip Technology |
4,769 |
|
![]() Tabla de datos |
- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 700 V | 60A | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 700 V | 1200pF @ 1V, 1MHz | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
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JANTXV1N6641US/TRSIGNAL OR COMPUTER DIODE Microchip Technology |
2,782 |
|
![]() Tabla de datos |
- | SQ-MELF, D | Tape & Reel (TR) | Active | Standard | 50 V | 300mA | 1.1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 5 ns | 100 nA @ 50 V | - | Military | MIL-PRF-19500/609 | Surface Mount | D-5D | -65°C ~ 175°C |