Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5417USDIODE GEN PURP 200V 3A D5B Microchip Technology |
4,822 |
|
![]() Tabla de datos |
- | SQ-MELF, E | Bulk | Active | Standard | 200 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 200 V | - | - | - | Surface Mount | D-5B | -65°C ~ 175°C |
![]() |
CD5822DIODE SCHOTTKY 40V 3A DIE Microchip Technology |
2,384 |
|
![]() Tabla de datos |
- | Die | Tape & Reel (TR) | Active | Schottky | 40 V | 3A | 550 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | - | - | - | Surface Mount | Die | -65°C ~ 125°C |
![]() |
JANTXV1N5551DIODE GEN PURP 400V 5A Microchip Technology |
4,455 |
|
![]() Tabla de datos |
- | B, Axial | Bulk | Active | Standard | 400 V | 5A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 400 V | - | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
![]() |
JAN1N5804USDIODE GEN PURP 100V 2.5A D-5A Microchip Technology |
4,121 |
|
![]() Tabla de datos |
- | SQ-MELF, A | Bulk | Discontinued at Digi-Key | Standard | 100 V | 2.5A | 975 mV @ 2.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 100 V | 25pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | D-5A | -65°C ~ 175°C |
![]() |
JANTXV1N5804DIODE GEN PURP 100V 1A AXIAL Microchip Technology |
2,470 |
|
- |
- | A, Axial | Bulk | Active | Standard | 100 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 100 V | 25pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Through Hole | A, Axial | -65°C ~ 175°C |
![]() |
JANTXV1N5806DIODE GEN PURP 150V 1A AXIAL Microchip Technology |
4,838 |
|
- |
- | A, Axial | Bulk | Active | Standard | 150 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 150 V | 25pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Through Hole | A, Axial | -65°C ~ 175°C |
![]() |
JANTXV1N6642U/TRDIODE GEN PURP 100V 300MA D-5D Microchip Technology |
2,776 |
|
- |
- | SQ-MELF, D | Tape & Reel (TR) | Active | Standard | 100 V | 300mA | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 500 nA @ 100 V | - | Military | MIL-PRF-19500/578 | Surface Mount | D-5D | -65°C ~ 175°C |
![]() |
JANTXV1N5618US/TRDIODE GEN PURP 600V 1A D-5A Microchip Technology |
3,370 |
|
- |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 600 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 600 V | - | Military | MIL-PRF-19500/427 | Surface Mount | D-5A | -65°C ~ 200°C |
![]() |
JANTXV1N6642US/TRDIODE GEN PURP 100V 300MA D-5B Microchip Technology |
3,519 |
|
- |
- | SQ-MELF, E | Tape & Reel (TR) | Active | Standard | 100 V | 300mA | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 500 nA @ 100 V | - | Military | MIL-PRF-19500/578 | Surface Mount | D-5B | -65°C ~ 175°C |
![]() |
JANTXV1N5550/TRDIODE GEN PURP 200V 5A Microchip Technology |
2,486 |
|
![]() Tabla de datos |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 200 V | 5A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 200 V | - | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |