Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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UT262DIODE GEN PURP 200V 2A A AXIAL Microchip Technology |
2,519 |
|
- |
- | A, Axial | Bulk | Active | Standard | 200 V | 2A | 1 V @ 900 mA | Standard Recovery >500ns, > 200mA (Io) | - | 2 µA @ 200 V | - | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
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UTR11DIODE GEN PURP 100V 1A A AXIAL Microchip Technology |
2,402 |
|
- |
- | A, Axial | Bulk | Active | Standard | 100 V | 1A | 1.1 V @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 3 µA @ 100 V | 100pF @ 0V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
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UTR31DIODE GEN PURP 300V 1A A AXIAL Microchip Technology |
2,455 |
|
- |
- | A, Axial | Bulk | Active | Standard | 300 V | 1A | 1.1 V @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 3 µA @ 300 V | 70pF @ 0V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
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UTR22DIODE GEN PURP 200V 2A A AXIAL Microchip Technology |
3,069 |
|
- |
- | A, Axial | Bulk | Active | Standard | 200 V | 2A | 1.1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 3 µA @ 200 V | 80pF @ 0V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
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UTR12DIODE GEN PURP 100V 2A A AXIAL Microchip Technology |
2,978 |
|
- |
- | A, Axial | Bulk | Active | Standard | 100 V | 2A | 1.1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 3 µA @ 100 V | 100pF @ 0V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
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UTR32DIODE GEN PURP 300V 2A A AXIAL Microchip Technology |
3,686 |
|
- |
- | A, Axial | Bulk | Active | Standard | 300 V | 2A | 1.1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 3 µA @ 300 V | 70pF @ 0V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
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UT261DIODE GEN PURP 100V 2A A AXIAL Microchip Technology |
4,496 |
|
- |
- | A, Axial | Bulk | Active | Standard | 100 V | 2A | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 2 µA @ 100 V | - | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
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UTR51DIODE GEN PURP 500V 1A A AXIAL Microchip Technology |
3,418 |
|
- |
- | A, Axial | Bulk | Active | Standard | 500 V | 1A | 1.1 V @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 3 µA @ 500 V | 50pF @ 0V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
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UT4005DIODE GEN PURP 50V 4A B Microchip Technology |
4,605 |
|
- |
- | Axial | Bulk | Active | Standard | 50 V | 4A | 1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 50 V | - | - | - | Through Hole | B | -195°C ~ 175°C |
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UT3010DIODE GEN PURP 100V 3A B Microchip Technology |
4,768 |
|
- |
- | Axial | Bulk | Active | Standard | 100 V | 3A | 1 V @ 2 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 100 V | - | - | - | Through Hole | B | -195°C ~ 175°C |