Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
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IDL06G65C5XUMA1DIODE SIL CARBIDE 650V 6A VSON-4 Infineon Technologies |
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CoolSiC™+ | 4-PowerTSFN | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 110 µA @ 650 V | 190pF @ 1V, 1MHz | - | - | Surface Mount | PG-VSON-4 | -55°C ~ 150°C |
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IDL08G65C5XUMA1DIODE SIL CARBIDE 650V 8A VSON-4 Infineon Technologies |
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CoolSiC™+ | 4-PowerTSFN | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 140 µA @ 650 V | 250pF @ 1V, 1MHz | - | - | Surface Mount | PG-VSON-4 | -55°C ~ 150°C |
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IDL12G65C5XUMA1DIODE SIL CARB 650V 12A VSON-4 Infineon Technologies |
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CoolSiC™+ | 4-PowerTSFN | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 190 µA @ 650 V | 360pF @ 1V, 1MHz | - | - | Surface Mount | PG-VSON-4 | -55°C ~ 150°C |
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IDP1301GXUMA1DIODE GEN PURP DSO-19 Infineon Technologies |
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* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IDW30E60AFKSA1DIODE GEN PURP 600V 60A TO247-3 Infineon Technologies |
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- | TO-247-3 | Tube | Discontinued at Digi-Key | Standard | 600 V | 60A | 2 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 143 ns | 40 µA @ 600 V | - | - | - | Through Hole | PG-TO247-3 | -40°C ~ 175°C |
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IDC51D120T6MX1SA3DIODE GP 1.2KV 100A WAFER Infineon Technologies |
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- | Die | Bulk | Active | Standard | 1200 V | 100A | 2.05 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 18 µA @ 1200 V | - | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
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SIDC06D120H8X1SA2DIODE GP 1.2KV 7.5A WAFER Infineon Technologies |
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- | Die | Bulk | Active | Standard | 1200 V | 7.5A | 1.97 V @ 7.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1200 V | - | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
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SIDC08D120H8X1SA1DIODE GEN PURP 1.2KV 150A WAFER Infineon Technologies |
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- | - | Bulk | Active | Standard | 1200 V | 150A | 1.41 V @ 45 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1200 V | - | - | - | - | - | -40°C ~ 175°C |
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SIDC81D120H8X1SA3DIODE GEN PURP 1.2KV 150A WAFER Infineon Technologies |
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- | - | Bulk | Active | Standard | 1200 V | 150A | 2.15 V @ 150 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1200 V | - | - | - | - | - | -40°C ~ 175°C |
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IRD3CH101DB6DIODE GEN PURP 1.2KV 200A DIE Infineon Technologies |
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- | Die | Bulk | Obsolete | Standard | 1200 V | 200A | 2.7 V @ 200 A | Fast Recovery =< 500ns, > 200mA (Io) | 360 ns | 100 µA @ 1200 V | - | - | - | Surface Mount | Die | -40°C ~ 175°C |