Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
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MUR5040RDIODE GEN PURP REV 400V 50A DO5 GeneSiC Semiconductor |
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- | DO-203AB, DO-5, Stud | Bulk | Active | Standard, Reverse Polarity | 400 V | 50A | 1 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 10 µA @ 50 V | - | - | - | Chassis, Stud Mount | DO-5 | -55°C ~ 150°C |
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MUR5060RDIODE GEN PURP REV 600V 50A DO5 GeneSiC Semiconductor |
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- | DO-203AB, DO-5, Stud | Bulk | Active | Standard, Reverse Polarity | 600 V | 50A | 1 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 10 µA @ 50 V | - | - | - | Chassis, Stud Mount | DO-5 | -55°C ~ 150°C |
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1N5832DIODE SCHOTTKY 20V 40A DO5 GeneSiC Semiconductor |
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- | DO-203AB, DO-5, Stud | Bulk | Active | Schottky | 20 V | 40A | 520 mV @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20 mA @ 10 V | - | - | - | Chassis, Stud Mount | DO-5 | -65°C ~ 150°C |
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1N5833DIODE SCHOTTKY 30V 40A DO5 GeneSiC Semiconductor |
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- | DO-203AB, DO-5, Stud | Bulk | Active | Schottky | 30 V | 40A | 550 mV @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20 mA @ 10 V | - | - | - | Chassis, Stud Mount | DO-5 | -65°C ~ 150°C |
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1N5834DIODE SCHOTTKY 40V 40A DO5 GeneSiC Semiconductor |
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- | DO-203AB, DO-5, Stud | Bulk | Active | Schottky | 40 V | 40A | 590 mV @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20 mA @ 10 V | - | - | - | Chassis, Stud Mount | DO-5 | -65°C ~ 150°C |
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SD51DIODE SCHOTTKY 45V 60A DO5 GeneSiC Semiconductor |
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- | DO-203AB, DO-5, Stud | Bulk | Active | Schottky | 45 V | 60A | 660 mV @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5 mA @ 45 V | - | - | - | Chassis, Stud Mount | DO-5 | -65°C ~ 150°C |
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GB25MPS17-247DIODE SIL CARB 1.7KV 52A TO247-2 GeneSiC Semiconductor |
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SiC Schottky MPS™ | TO-247-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1700 V | 52A | 1.8 V @ 25 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1700 V | 2350pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
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1N5832RDIODE SCHOTTKY REV 20V 40A DO5 GeneSiC Semiconductor |
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- | DO-203AB, DO-5, Stud | Bulk | Active | Schottky, Reverse Polarity | 20 V | 40A | 520 mV @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20 mA @ 10 V | - | - | - | Chassis, Stud Mount | DO-5 | -65°C ~ 150°C |
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1N5833RDIODE SCHOTTKY REV 30V 40A DO5 GeneSiC Semiconductor |
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- | DO-203AB, DO-5, Stud | Bulk | Active | Schottky, Reverse Polarity | 30 V | 40A | 550 mV @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20 mA @ 10 V | - | - | - | Chassis, Stud Mount | DO-5 | -65°C ~ 150°C |
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1N5834RDIODE SCHOTTKY REV 40V 40A DO5 GeneSiC Semiconductor |
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- | DO-203AB, DO-5, Stud | Bulk | Active | Schottky, Reverse Polarity | 40 V | 40A | 590 mV @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20 mA @ 10 V | - | - | - | Chassis, Stud Mount | DO-5 | -65°C ~ 150°C |