Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
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FR20G02DIODE GEN PURP 400V 20A DO5 GeneSiC Semiconductor |
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- | DO-203AB, DO-5, Stud | Bulk | Active | Standard | 400 V | 20A | 1 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 25 µA @ 50 V | - | - | - | Chassis, Stud Mount | DO-5 | -40°C ~ 125°C |
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FR20J02DIODE GEN PURP 600V 20A DO5 GeneSiC Semiconductor |
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- | DO-203AB, DO-5, Stud | Bulk | Active | Standard | 600 V | 20A | 1 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 25 µA @ 50 V | - | - | - | Chassis, Stud Mount | DO-5 | -40°C ~ 125°C |
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GD30MPS12JDIODE SIL CARB 1.2KV 59A TO263-7 GeneSiC Semiconductor |
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SiC Schottky MPS™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 59A | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | 1101pF @ 1V, 1MHz | - | - | Surface Mount | TO-263-7 | -55°C ~ 175°C |
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GAP3SLT33-220FPDIODE SIC 3.3KV 300MA TO220FP GeneSiC Semiconductor |
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SiC Schottky MPS™ | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 3300 V | 300mA | 1.7 V @ 300 mA | - | 0 ns | 5 µA @ 3300 V | 42pF @ 1V, 1MHz | - | - | Through Hole | TO-220FP | -55°C ~ 175°C |
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FR12BR02DIODE GEN PURP REV 100V 12A DO4 GeneSiC Semiconductor |
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- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 100 V | 12A | 800 mV @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 25 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 150°C |
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FR12DR02DIODE GEN PURP REV 200V 12A DO4 GeneSiC Semiconductor |
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- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 200 V | 12A | 800 mV @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 25 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 150°C |
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FR12GR02DIODE GEN PURP REV 400V 12A DO4 GeneSiC Semiconductor |
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- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 400 V | 12A | 800 mV @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 25 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 150°C |
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FR12JR02DIODE GEN PURP REV 600V 12A DO4 GeneSiC Semiconductor |
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- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 600 V | 12A | 800 mV @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 25 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 150°C |
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GC20MPS12-247DIODE SIL CARB 1.2KV 90A TO247-2 GeneSiC Semiconductor |
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SiC Schottky MPS™ | TO-247-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 90A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 18 µA @ 1200 V | 1298pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
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FR20K05DIODE GEN PURP 800V 20A DO5 GeneSiC Semiconductor |
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- | DO-203AB, DO-5, Stud | Bulk | Active | Standard | 800 V | 20A | 1 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 25 µA @ 800 V | - | - | - | Chassis, Stud Mount | DO-5 | -40°C ~ 125°C |