Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
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S6JDIODE GEN PURP 600V 6A DO4 GeneSiC Semiconductor |
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- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 600 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
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S6JRDIODE GEN PURP REV 600V 6A DO4 GeneSiC Semiconductor |
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- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 600 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
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S6KDIODE GEN PURP 800V 6A DO4 GeneSiC Semiconductor |
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- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 800 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
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S6KRDIODE GEN PURP REV 800V 6A DO4 GeneSiC Semiconductor |
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- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 800 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
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S6MDIODE GEN PURP 1KV 6A DO4 GeneSiC Semiconductor |
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- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 1000 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
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S6MRDIODE GEN PURP REV 1KV 6A DO4 GeneSiC Semiconductor |
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- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 1000 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
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S6QDIODE GEN PURP 1.2KV 6A DO4 GeneSiC Semiconductor |
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- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 1200 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
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S6QRDIODE GEN PURP REV 1.2KV 6A DO4 GeneSiC Semiconductor |
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- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 1200 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
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GC05MPS12-220DIODE SIL CARB 1.2KV 29A TO220-2 GeneSiC Semiconductor |
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- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 29A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 4 µA @ 1200 V | 359pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
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GC10MPS12-220DIODE SIL CARB 1.2KV 54A TO220-2 GeneSiC Semiconductor |
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SiC Schottky MPS™ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 54A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | 660pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |