Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Configuración del diodo | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) (por diodo) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Temperatura de funcionamiento - Unión | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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MUR20040CTRDIODE MODULE GP 400V 100A 2TOWER GeneSiC Semiconductor |
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- | Twin Tower | Bulk | Active | 1 Pair Common Anode | Standard | 400 V | 100A | 1.3 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
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MUR20060CTDIODE MODULE GP 600V 100A 2TOWER GeneSiC Semiconductor |
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- | Twin Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 600 V | 100A | 1.7 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 110 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
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MUR20060CTRDIODE MODULE GP 600V 100A 2TOWER GeneSiC Semiconductor |
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- | Twin Tower | Bulk | Active | 1 Pair Common Anode | Standard | 600 V | 100A | 1.7 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 110 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
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MURT30005DIODE MODULE GP 50V 150A 3TOWER GeneSiC Semiconductor |
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- | Three Tower | Bulk | Obsolete | 1 Pair Common Cathode | Standard | 50 V | 150A | 1.3 V @ 150 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURT30005RDIODE MODULE GP 50V 150A 3TOWER GeneSiC Semiconductor |
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- | Three Tower | Bulk | Obsolete | 1 Pair Common Anode | Standard | 50 V | 150A | 1.3 V @ 150 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURT20010DIODE MODULE GP 100V 100A 3TOWER GeneSiC Semiconductor |
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- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 100 V | 100A | 1.3 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURT20010RDIODE MODULE GP 100V 100A 3TOWER GeneSiC Semiconductor |
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![]() Tabla de datos |
- | Three Tower | Bulk | Active | 1 Pair Common Anode | Standard | 100 V | 100A | 1.3 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURT20020DIODE MODULE GP 200V 100A 3TOWER GeneSiC Semiconductor |
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- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 200 V | 100A | 1.3 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURT20020RDIODE MODULE GP 200V 100A 3TOWER GeneSiC Semiconductor |
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![]() Tabla de datos |
- | Three Tower | Bulk | Active | 1 Pair Common Anode | Standard | 200 V | 100A | 1.3 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURT20040DIODE MODULE GP 400V 100A 3TOWER GeneSiC Semiconductor |
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- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 400 V | 100A | 1.35 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |