Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Configuración del diodo | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) (por diodo) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Temperatura de funcionamiento - Unión | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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MBR200200CTDIODE MOD SCHOT 200V 100A 2TOWER GeneSiC Semiconductor |
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- | Twin Tower | Bulk | Active | 1 Pair Common Cathode | Schottky | 200 V | 100A | 920 mV @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3 mA @ 200 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
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MBR200200CTRDIODE MOD SCHOT 200V 100A 2TOWER GeneSiC Semiconductor |
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- | Twin Tower | Bulk | Active | 1 Pair Common Anode | Schottky | 200 V | 100A | 920 mV @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3 mA @ 200 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
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MUR40005CTDIODE MODULE GP 50V 200A 2TOWER GeneSiC Semiconductor |
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- | Twin Tower | Bulk | Obsolete | 1 Pair Common Cathode | Standard | 50 V | 200A | 1.3 V @ 125 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
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MUR40005CTRDIODE MODULE GP 50V 200A 2TOWER GeneSiC Semiconductor |
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- | Twin Tower | Bulk | Obsolete | 1 Pair Common Anode | Standard | 50 V | 200A | 1.3 V @ 125 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
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MURT10040DIODE MODULE GP 400V 50A 3TOWER GeneSiC Semiconductor |
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- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 400 V | 50A | 1.35 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURT10040RDIODE MODULE GP 400V 50A 3TOWER GeneSiC Semiconductor |
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- | Three Tower | Bulk | Active | 1 Pair Common Anode | Standard, Reverse Polarity | 400 V | 50A | 1.35 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURT10060DIODE MODULE GP 600V 50A 3TOWER GeneSiC Semiconductor |
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- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 600 V | 50A | 1.7 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURT10060RDIODE MODULE GP 600V 50A 3TOWER GeneSiC Semiconductor |
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- | Three Tower | Bulk | Active | 1 Pair Common Anode | Standard, Reverse Polarity | 600 V | 50A | 1.7 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MBR30035CTDIODE MOD SCHOTT 35V 150A 2TOWER GeneSiC Semiconductor |
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- | Twin Tower | Bulk | Active | 1 Pair Common Cathode | Schottky | 35 V | 150A | 650 mV @ 150 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8 mA @ 20 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
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MBR30035CTRDIODE MOD SCHOTT 35V 150A 2TOWER GeneSiC Semiconductor |
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- | Twin Tower | Bulk | Active | 1 Pair Common Anode | Schottky, Reverse Polarity | 35 V | 150A | 700 mV @ 150 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 35 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |