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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MSC025SMA120B4TRANS SJT N-CH 1200V 103A TO247 |
3,781 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 103A (Tc) | 20V | 31mOhm @ 40A, 20V | 2.8V @ 3mA | 232 nC @ 20 V | +23V, -10V | 3020 pF @ 1000 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
IXTN62N50LMOSFET N-CH 500V 62A SOT227B |
3,945 |
|
Tabla de datos |
Linear | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 62A (Tc) | 20V | 100mOhm @ 500mA, 20V | 5V @ 250µA | 550 nC @ 20 V | ±30V | 11500 pF @ 25 V | - | 800W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
IXFN50N120SICSICFET N-CH 1200V 47A SOT227B |
3,382 |
|
Tabla de datos |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 47A (Tc) | 20V | 50mOhm @ 40A, 20V | 2.4V @ 10mA | 100 nC @ 20 V | +20V, -5V | 1900 pF @ 1000 V | - | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
FBG10N05ASHGAN FET HEMT 100V 5A 4FSMD-A |
3,075 |
|
Tabla de datos |
eGaN® | 4-SMD, No Lead | Bulk | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 5A (Tc) | 5V | 45mOhm @ 5A, 5V | 2.5V @ 1.2mA | 2.2 nC @ 5 V | +6V, -4V | 233 pF @ 50 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-SMD |
|
|
FBG20N04ASHGAN FET HEMT 200V 4A 4FSMD-A |
3,231 |
|
Tabla de datos |
e-GaN® | 4-SMD, No Lead | Bulk | Active | N-Channel | GaNFET (Gallium Nitride) | 200 V | 4A (Tc) | 5V | 130mOhm @ 4A, 5V | 2.8V @ 1mA | 3 nC @ 5 V | +6V, -4V | 150 pF @ 100 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-SMD |
|
IPS70R1K4P7SAKMA1MOSFET N-CH 700V 4A TO251-3 |
4,928 |
|
Tabla de datos |
CoolMOS™ P7 | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 4A (Tc) | 10V | 1.4Ohm @ 700mA, 10V | 3.5V @ 40µA | 4.7 nC @ 10 V | ±16V | 158 pF @ 400 V | - | 22.7W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
|
TSM2N7002KCU60V, 0.24A, SINGLE N-CHANNEL POW |
3,944 |
|
Tabla de datos |
- | SC-70, SOT-323 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 240mA (Ta) | 4.5V, 10V | 2.5Ohm @ 240mA, 10V | 2.5V @ 250µA | 0.91 nC @ 4.5 V | ±20V | 30 pF @ 30 V | - | 298mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-323 |
|
|
SUD80460E-BE3MOSFET N-CH 150V 42A TO252AA |
2,937 |
|
Tabla de datos |
ThunderFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 42A (Tc) | 10V | 44.7mOhm @ 8.3A, 10V | 4V @ 250µA | 16 nC @ 10 V | ±20V | 560 pF @ 50 V | - | 65.2W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA |
|
PJC7412_R1_0000130V N-CHANNEL ENHANCEMENT MODE M |
3,855 |
|
Tabla de datos |
- | SC-70, SOT-323 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 30 V | 500mA (Ta) | 1.5V, 4.5V | 1.2Ohm @ 500mA, 4.5V | 1.1V @ 250µA | 0.87 nC @ 4.5 V | ±10V | 34 pF @ 15 V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-323 |
|
PJA3412-AU_R2_000A130V N-CHANNEL ENHANCEMENT MODE M |
2,461 |
|
Tabla de datos |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 20 V | 4.1A (Ta) | 1.8V, 4.5V | 56mOhm @ 4.1A, 4.5V | 1.2V @ 250µA | 4.6 nC @ 4.5 V | ±12V | 350 pF @ 10 V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | SOT-23 |
|
IPA50R950CEXKSA2MOSFET N-CH 500V 3.7A TO220 |
4,745 |
|
Tabla de datos |
CoolMOS™ CE | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 3.7A (Tc) | 13V | 950mOhm @ 1.2A, 13V | 3.5V @ 100µA | 10.5 nC @ 10 V | ±20V | 231 pF @ 100 V | - | 25.7W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-FP |
|
PJQ1902_R1_0000130V N-CHANNEL ENHANCEMENT MODE M |
2,336 |
|
- |
- | 3-UFDFN | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 30 V | 500mA (Ta) | 1.5V, 4.5V | 1.2Ohm @ 350mA, 4.5V | 1.1V @ 250µA | 0.87 nC @ 4.5 V | ±10V | 34 pF @ 15 V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 3-DFN (0.6x1) |
|
PXN6R7-30QLJPXN6R7-30QL/SOT8002/MLPAK33 |
81 |
|
Tabla de datos |
TrenchMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 12.7A (Ta), 62A (Tc) | 4.5V, 10V | 6.7mOhm @ 12.7A, 10V | 2.2V @ 250µA | 24.8 nC @ 10 V | ±20V | 1150 pF @ 15 V | - | 1.7W (Ta), 40.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | MLPAK33 |
|
PJE8412_R1_0000130V N-CHANNEL ENHANCEMENT MODE M |
4,448 |
|
Tabla de datos |
- | SOT-523 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 30 V | 350mA (Ta) | 1.5V, 4.5V | 1.2Ohm @ 350mA, 4.5V | 1.1V @ 250µA | 0.87 nC @ 4.5 V | ±10V | 34 pF @ 15 V | - | 300mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-523 |
|
SSM6J213FE(TE85L,FMOSFET P CH 20V 2.6A ES6 |
4,231 |
|
Tabla de datos |
U-MOSVI | SOT-563, SOT-666 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.6A (Ta) | 1.5V, 4.5V | 103mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7 nC @ 4.5 V | ±8V | 290 pF @ 10 V | - | 500mW (Ta) | 150°C (TJ) | - | - | Surface Mount | ES6 |
|
|
IPAN70R600P7SXKSA1MOSFET N-CH 700V 8.5A TO220 |
2,811 |
|
Tabla de datos |
CoolMOS™ P7 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 8.5A (Tc) | 10V | 600mOhm @ 1.8A, 10V | 3.5V @ 90µA | 10.5 nC @ 10 V | ±16V | 364 pF @ 400 V | - | 24.9W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
SI3493DDV-T1-GE3MOSFET P-CHANNEL 20V 8A 6TSOP |
2,363 |
|
Tabla de datos |
TrenchFET® | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 8A (Tc) | 1.8V, 4.5V | 24mOhm @ 7.5A, 4.5V | 1V @ 250µA | 30 nC @ 4.5 V | ±8V | 1825 pF @ 10 V | - | 3.6W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-TSOP |
|
RAL025P01TCRMOSFET P-CH 12V 2.5A TUMT6 |
4,382 |
|
Tabla de datos |
- | 6-SMD, Flat Leads | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 2.5A (Ta) | 1.5V, 4.5V | 62mOhm @ 2.5A, 4.5V | 1V @ 1mA | 16 nC @ 4.5 V | -8V | 2000 pF @ 6 V | - | 320mW (Ta) | 150°C (TJ) | - | - | Surface Mount | TUMT6 |
|
SSM5H08TU,LFMOSFET N-CH 20V 1.5A UFV |
2 |
|
Tabla de datos |
U-MOSIII | 6-SMD (5 Leads), Flat Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 1.5A (Ta) | 2.5V, 4V | 160mOhm @ 750mA, 4V | 1.1V @ 100µA | - | ±12V | 125 pF @ 10 V | Schottky Diode (Isolated) | 500mW (Ta) | 150°C | - | - | Surface Mount | UFV |
|
|
IPAN70R360P7SXKSA1MOSFET N-CH 700V 12.5A TO220 |
3,818 |
|
Tabla de datos |
CoolMOS™ P7 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 12.5A (Tc) | 10V | 360mOhm @ 3A, 10V | 3.5V @ 150µA | 16.4 nC @ 10 V | ±16V | 517 pF @ 400 V | - | 26.5W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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