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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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APT1201R2BLLGMOSFET N-CH 1200V 12A TO247 |
16 |
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POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 12A (Tc) | 10V | 1.2Ohm @ 6A, 10V | 5V @ 1mA | 150 nC @ 10 V | ±30V | 3100 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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IXFR32N100Q3MOSFET N-CH 1000V 23A ISOPLUS247 |
30 |
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Tabla de datos |
HiPerFET™, Q3 Class | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 23A (Tc) | 10V | 350mOhm @ 16A, 10V | 6.5V @ 8mA | 195 nC @ 10 V | ±30V | 9940 pF @ 25 V | - | 570W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
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IXFB210N20PMOSFET N-CH 200V 210A PLUS264 |
19 |
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Tabla de datos |
HiPerFET™, Polar | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 210A (Tc) | 10V | 10.5mOhm @ 105A, 10V | 4.5V @ 8mA | 255 nC @ 10 V | ±20V | 18600 pF @ 25 V | - | 1500W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PLUS264™ |
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APT51F50JMOSFET N-CH 500V 51A ISOTOP |
22 |
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Tabla de datos |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 51A (Tc) | 10V | 75mOhm @ 37A, 10V | 5V @ 2.5mA | 290 nC @ 10 V | ±30V | 11600 pF @ 25 V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APT5010JLLU2MOSFET N-CH 500V 41A SOT227 |
31 |
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Tabla de datos |
- | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 41A (Tc) | 10V | 100mOhm @ 23A, 10V | 5V @ 2.5mA | 96 nC @ 10 V | ±30V | 4360 pF @ 25 V | - | 378W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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IXFB40N110Q3MOSFET N-CH 1100V 40A PLUS264 |
20 |
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Tabla de datos |
HiPerFET™, Q3 Class | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1100 V | 40A (Tc) | 10V | 260mOhm @ 20A, 10V | 6.5V @ 8mA | 300 nC @ 10 V | ±30V | 14000 pF @ 25 V | - | 1560W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS264™ |
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MMIX1F180N25TMOSFET N-CH 250V 132A 24SMPD |
18 |
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Tabla de datos |
GigaMOS™, HiPerFET™, TrenchT2™ | 24-PowerSMD, 21 Leads | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 132A (Tc) | 10V | 13mOhm @ 90A, 10V | 5V @ 8mA | 364 nC @ 10 V | ±20V | 23800 pF @ 25 V | - | 570W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 24-SMPD |
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SCTWA90N65G2VSILICON CARBIDE POWER MOSFET 650 |
8 |
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Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 119A (Tc) | 18V | 24mOhm @ 50A, 18V | 5V @ 1mA | 157 nC @ 18 V | +22V, -10V | 3380 pF @ 400 V | - | 565W (Tc) | -55°C ~ 200°C (TJ) | - | - | Through Hole | TO-247 Long Leads |
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APT50M75JLLU2MOSFET N-CH 500V 51A SOT227 |
31 |
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Tabla de datos |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 51A (Tc) | 10V | 75mOhm @ 25.5A, 10V | 5V @ 1mA | 123 nC @ 10 V | ±30V | 5590 pF @ 25 V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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IXFN64N60PMOSFET N-CH 600V 50A SOT227B |
90 |
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Tabla de datos |
HiPerFET™, Polar | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 10V | 96mOhm @ 500mA, 10V | 5V @ 8mA | 200 nC @ 10 V | ±30V | 12000 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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MMIX1F132N50P3MOSFET N-CH 500V 63A 24SMPD |
20 |
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Tabla de datos |
HiPerFET™, Polar3™ | 24-PowerSMD, 21 Leads | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 63A (Tc) | 10V | 43mOhm @ 66A, 10V | 5V @ 8mA | 250 nC @ 10 V | ±30V | 18600 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 24-SMPD |
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IXFB40N110PMOSFET N-CH 1100V 40A PLUS264 |
32 |
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Tabla de datos |
HiPerFET™, Polar | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1100 V | 40A (Tc) | 10V | 260mOhm @ 20A, 10V | 6.5V @ 1mA | 310 nC @ 10 V | ±30V | 19000 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS264™ |
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MSC015SMA070SSICFET N-CH 700V 126A D3PAK |
20 |
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Tabla de datos |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 126A (Tc) | 20V | 19mOhm @ 40A, 20V | 2.4V @ 4mA (Typ) | 215 nC @ 20 V | +23V, -10V | 4500 pF @ 700 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D3PAK |
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IXFK400N15X3MOSFET N-CH 150V 400A TO264 |
80 |
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Tabla de datos |
HiPerFET™, Ultra X3 | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 400A (Tc) | 10V | 3mOhm @ 200A, 10V | 4.5V @ 8mA | 365 nC @ 10 V | ±20V | 23700 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 |
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IXKN40N60CMOSFET N-CH 600V 40A SOT-227B |
9 |
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Tabla de datos |
CoolMOS™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 40A (Tc) | 10V | 70mOhm @ 500mA, 10V | 3.9V @ 2.5mA | 250 nC @ 10 V | ±20V | - | - | 290W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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IXFB82N60Q3MOSFET N-CH 600V 82A PLUS264 |
21 |
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Tabla de datos |
HiPerFET™, Q3 Class | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 82A (Tc) | 10V | 75mOhm @ 41A, 10V | 6.5V @ 8mA | 275 nC @ 10 V | ±30V | 13500 pF @ 25 V | - | 1560W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS264™ |
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IXFB100N50Q3MOSFET N-CH 500V 100A PLUS264 |
11 |
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Tabla de datos |
HiPerFET™, Q3 Class | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 100A (Tc) | 10V | 49mOhm @ 50A, 10V | 6.5V @ 8mA | 255 nC @ 10 V | ±30V | 13800 pF @ 25 V | - | 1560W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS264™ |
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APT10M11LVRGMOSFET N-CH 100V 100A TO264 |
19 |
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Tabla de datos |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 10V | 11mOhm @ 50A, 10V | 4V @ 2.5mA | 450 nC @ 10 V | ±30V | 10300 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 (L) |
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IXTN46N50LMOSFET N-CH 500V 46A SOT-227B |
16 |
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Tabla de datos |
Linear | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 46A (Tc) | 20V | 160mOhm @ 500mA, 20V | 6V @ 250µA | 260 nC @ 15 V | ±30V | 7000 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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IXFN62N80Q3MOSFET N-CH 800V 49A SOT227B |
8 |
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Tabla de datos |
HiPerFET™, Q3 Class | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 49A (Tc) | 10V | 140mOhm @ 31A, 10V | 6.5V @ 8mA | 270 nC @ 10 V | ±30V | 13600 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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