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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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DIF120SIC022SIC MOSFET, TO-247-4L, N, 120A, Diotec Semiconductor |
3,707 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 120A (Tc) | 18V | 22.3mOhm @ 75A, 18V | 4V @ 23.5mA | 269 nC @ 18 V | +18V, -4V | 4817 pF @ 1000 V | - | 340W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
DIF120SIC028SIC MOSFET, TO-247-4L, N, 118A, Diotec Semiconductor |
3,529 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 118A (Tc) | 20V | 28mOhm @ 80A, 20V | 4V @ 25mA | 373 nC @ 20 V | +20V, -5V | 5691 pF @ 1000 V | - | 715W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
DIW065SIC015SIC MOSFET, TO-247-3L, N, 150A, Diotec Semiconductor |
4,524 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 150A (Tc) | 18V | 15mOhm @ 75A, 18V | 4V @ 15mA | 236 nC @ 20 V | +15V, -4V | 7169 pF @ 400 V | - | 550W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
|
|
DIF065SIC020SIC MOSFET, TO-247-4L, N, 150A, Diotec Semiconductor |
4,032 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 150A (Tc) | 18V | 20mOhm @ 75A, 18V | 4V @ 22mA | 236 nC @ 20 V | +18V, -5V | 7169 pF @ 400 V | - | 550W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
MMFTP3008AKMOSFET SOT-23 P -30V -0.23A Diotec Semiconductor |
4,990 |
|
Tabla de datos |
- | TO-236-3, SC-59, SOT-23-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 230mA (Ta) | 2.5V, 4.5V | 4.1Ohm @ 200mA, 4.5V | 1.6V @ 250µA | 0.55 nC @ 4.5 V | ±8V | 31 pF @ 15 V | - | 420mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 (TO-236) |
|
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MMFTP3008KMOSFET SOT-23 P -30V -0.36A Diotec Semiconductor |
4,929 |
|
Tabla de datos |
- | TO-236-3, SC-59, SOT-23-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 360mA (Ta) | 1.8V, 4.5V | 2.5Ohm @ 300mA, 4.5V | 1V @ 250µA | 1.22 nC @ 4.5 V | ±10V | 50 pF @ 10 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 (TO-236) |
|
|
2N7002KPWMOSFET SOT-323 N 60V 0.31A Diotec Semiconductor |
3,502 |
|
Tabla de datos |
- | SC-70, SOT-323 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 310mA (Ta) | 5V, 10V | 1.6Ohm @ 500mA, 10V | 2.1V @ 250µA | 1.1 nC @ 10 V | ±20V | 31 pF @ 10 V | - | 275mW (Ta) | 150°C (TJ) | - | - | Surface Mount | SOT-323 |
|
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MMBT7002CK-AQMOSFET SOT-23 N 60V 0.3A 2OHM Diotec Semiconductor |
3,746 |
|
Tabla de datos |
- | TO-236-3, SC-59, SOT-23-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 300mA (Ta) | 5V, 10V | 2Ohm @ 500mA, 10V | 2.5V @ 250µA | 1.1 nC @ 10 V | ±20V | 31 pF @ 25 V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | SOT-23-3 (TO-236) |
|
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2N7002A-AQMOSFET SOT-23 N 60V 0.28A Diotec Semiconductor |
3,299 |
|
Tabla de datos |
- | TO-236-3, SC-59, SOT-23-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 280mA (Ta) | 5V, 10V | 2Ohm @ 500mA, 10V | 2.5V @ 250µA | - | ±30V | 50 pF @ 25 V | - | 350mW (Ta) | 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | SOT-23-3 (TO-236) |
|
|
MMFTP3008K-AQMOSFET SOT-23 P -30V -0.36A Diotec Semiconductor |
4,128 |
|
Tabla de datos |
- | TO-236-3, SC-59, SOT-23-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 360mA (Ta) | 1.8V, 4.5V | 2.5Ohm @ 300mA, 4.5V | 1V @ 250µA | 1.22 nC @ 4.5 V | ±10V | 50 pF @ 10 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | SOT-23-3 (TO-236) |
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