| 制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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| Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RFA100N05EN-CHANNEL POWER MOSFET |
1,544 | - |
|
Tabla de datos |
- | TO-218-5 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 100A (Tc) | 10V | 8mOhm @ 100A, 10V | 4V @ 250µA | 230 nC @ 10 V | ±20V | - | - | 240W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-218-5 |
|
SIHB22N65E-T1-GE3N-CHANNEL 650V |
752 | - |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±30V | 2415 pF @ 100 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IGLR60R260D1XUMA1GAN HV |
4,734 | - |
|
Tabla de datos |
CoolGaN™ | 8-PowerTDFN | Tape & Reel (TR) | Last Time Buy | N-Channel | GaNFET (Gallium Nitride) | 600 V | 10.4A (Tc) | - | - | 1.6V @ 690µA | - | -10V | 110 pF @ 400 V | - | 52W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSON-8-7 |
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IPZ60R037P7XKSA1MOSFET N-CH 650V 76A TO247-4 |
3,101 | - |
|
- |
CoolMOS™ P7 | TO-247-4 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 76A (Tc) | 10V | 37mOhm @ 29.5A, 10V | 4V @ 1.48mA | 121 nC @ 10 V | ±20V | 5243 pF @ 400 V | - | 255W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4 |
|
FCB20N60F-F085MOSFET N-CH 600V 20A TO263AB |
4,686 | - |
|
Tabla de datos |
SuperFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 195mOhm @ 20A, 10V | 5V @ 250µA | 102 nC @ 10 V | ±30V | 2035 pF @ 25 V | - | 405W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263 (D2PAK) |
|
STFI130N10F3MOSFET N-CH 100V 46A I2PAKFP |
1,500 | - |
|
Tabla de datos |
STripFET™ III | TO-262-3 Full Pack, I2PAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 46A (Tc) | 10V | 9.6mOhm @ 23A, 10V | 4V @ 250µA | 57 nC @ 10 V | ±20V | 3305 pF @ 25 V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-281 (I2PAKFP) |
|
IAUS300N08S5N014ATMA1MOSFET N-CH 80V 300A HSOG-8 |
1,800 | - |
|
Tabla de datos |
OptiMOS™ | 8-PowerSMD, Gull Wing | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 300A (Tc) | 6V, 10V | 1.4mOhm @ 100A, 10V | 3.8V @ 230µA | 187 nC @ 10 V | ±20V | 13178 pF @ 40 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HSOG-8-1 |
|
STL80N75F6MOSFET N-CH 75V 80A POWERFLAT |
905 | - |
|
Tabla de datos |
DeepGATE™, STripFET™ VI | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 80A (Tc) | 10V | 6.3mOhm @ 9A, 10V | 4V @ 250µA | 100 nC @ 10 V | ±20V | 7120 pF @ 25 V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerFlat™ (5x6) |
|
IPB60R090CFD7ATMA1MOSFET N-CH 600V 25A TO263-3 |
1,154 | - |
|
Tabla de datos |
CoolMOS™ CFD7 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 90mOhm @ 11.4A, 10V | 4.5V @ 570µA | 51 nC @ 10 V | ±20V | 2103 pF @ 400 V | - | 124W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
FDB7030LMOSFET N-CH 30V 80A TO263AB |
63,006 | - |
|
Tabla de datos |
PowerTrench® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Ta) | 4.5V, 10V | 7mOhm @ 40A, 10V | 3V @ 250µA | 33 nC @ 5 V | ±20V | 2440 pF @ 15 V | - | 68W (Tc) | -65°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
FQH35N40N-CHANNEL POWER MOSFET |
846 | - |
|
Tabla de datos |
QFET® | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 35A (Tc) | 10V | 105mOhm @ 17.5A, 10V | 5V @ 250µA | 140 nC @ 10 V | ±30V | 5600 pF @ 25 V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
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STP18NM60NDMOSFET N-CH 600V 13A TO220 |
174 | - |
|
Tabla de datos |
FDmesh™ II | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 290mOhm @ 6.5A, 10V | 5V @ 250µA | 34 nC @ 10 V | ±25V | 1030 pF @ 50 V | - | 110W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
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SIPC69SN60C3X3SA1N-CHANNEL POWER MOSFET |
3,000 | - |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SIPC69SN60C3X2SA1N-CHANNEL POWER MOSFET |
3,122 | - |
|
- |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
STI26NM60NMOSFET N-CH 600V 20A I2PAK |
942 | - |
|
Tabla de datos |
MDmesh™ II | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 165mOhm @ 10A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±25V | 1800 pF @ 50 V | - | 140W (Tc) | 150°C (TJ) | - | - | Through Hole | I2PAK |
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GSFA20106MOSFET, N-CH, SINGLE, 106.00A, 2 |
128 | - |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 106A (Tc) | 10V | 10.7mOhm @ 88A, 10V | 4V @ 250µA | 64 nC @ 10 V | ±20V | 4720 pF @ 100 V | - | 340W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
|
STFI20NM65NMOSFET N-CH 650V 15A I2PAKFP |
1,500 | - |
|
Tabla de datos |
MDmesh™ II | TO-262-3 Full Pack, I2PAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 270mOhm @ 7.5A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±25V | 1280 pF @ 50 V | - | 30W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-281 (I2PAKFP) |
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|
STH320N4F6-2MOSFET N-CH 40V 200A H2PAK |
228 | - |
|
Tabla de datos |
DeepGATE™, STripFET™ VI | TO-263-3, D2PAK (2 Leads + Tab), Variant | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 200A (Tc) | 10V | 1.3mOhm @ 80A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 13800 pF @ 15 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | H2PAK |
|
UPA1559H(1)-AZN-CHANNEL POWER MOSFET |
8,419 | - |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
UPA1559H(2)-AZN-CHANNEL POWER MOSFET |
2,719 | - |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |





