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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDD2570MOSFET N-CH 150V 4.7A TO252 |
84,908 |
|
Tabla de datos |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 4.7A (Ta) | 6V, 10V | 80mOhm @ 4.7A, 10V | 4V @ 250µA | 62 nC @ 10 V | ±20V | 1907 pF @ 75 V | - | 3.2W (Ta), 70W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
FDS5690MOSFET N-CH 60V 7A 8SOIC |
51,321 |
|
Tabla de datos |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 7A (Ta) | 6V, 10V | 28mOhm @ 7A, 10V | 4V @ 250µA | 32 nC @ 10 V | ±20V | 1107 pF @ 30 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
2SK3744-TL-EMOSFET N-CH |
7,500 |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
TPIC2202KCN-CHANNEL POWER MOSFET |
5,494 |
|
Tabla de datos |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
FDZ208PMOSFET P-CH 30V 12.5A 30BGA |
5,403 |
|
Tabla de datos |
PowerTrench® | 30-WFBGA | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 12.5A (Ta) | 4.5V, 10V | 10.5mOhm @ 12.5A, 10V | 3V @ 250µA | 35 nC @ 5 V | ±25V | 2409 pF @ 15 V | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 30-BGA (4x3.5) |
|
HUF75639S3MOSFET N-CH 100V 56A I2PAK |
5,257 |
|
Tabla de datos |
UltraFET™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 56A (Tc) | 10V | 25mOhm @ 56A, 10V | 4V @ 250µA | 130 nC @ 20 V | ±20V | 2000 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
|
GT095N10SN100V, 21A,RD<9.5M@10V,VTH1.2V~2 |
3,990 |
|
Tabla de datos |
SGT | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 11A (Tc) | 4.5V, 10V | 10.5mOhm @ 20A, 10V | 2.5V @ 250µA | 54 nC @ 10 V | ±20V | 1628 pF @ 50 V | - | 3.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
|
|
2SK3114-S17-AZPOWER FIELD-EFFECT TRANSISTOR |
1,000 |
|
Tabla de datos |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
GSGH5R585MOSFET, N-CH, SINGLE, 120.00A, 8 |
980 |
|
Tabla de datos |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 85 V | 120A (Ta) | 10V | 5.5mOhm @ 50A, 10V | 3.9V @ 250µA | 69 nC @ 10 V | ±20V | 4284 pF @ 40 V | - | 160W (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
|
RCJ120N25TLMOSFET N-CH 250V 12A LPT |
884 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 12A (Tc) | 10V | 235mOhm @ 6A, 10V | 5V @ 1mA | 35 nC @ 10 V | ±30V | 1800 pF @ 25 V | - | 1.56W (Ta), 107W (Tc) | 150°C (TJ) | - | - | Surface Mount | LPTS |
|
IRF2805SPBFMOSFET N-CH 55V 135A D2PAK |
2,418 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 55 V | 135A (Tc) | 10V | 4.7mOhm @ 104A, 10V | 4V @ 250µA | 230 nC @ 10 V | ±20V | 5110 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IPAN70R750P7SXKSA1MOSFET N-CH 700V 6.5A TO220 |
116 |
|
Tabla de datos |
CoolMOS™ P7 | TO-220-3 Full Pack | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 700 V | 6.5A (Tc) | 10V | 750mOhm @ 1.4A, 10V | 3.5V @ 70µA | 8.3 nC @ 10 V | ±16V | 306 pF @ 400 V | - | 20.8W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
IRF6619TR1PBFMOSFET N-CH 20V 30A DIRECTFET |
2,000 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 30A (Ta), 150A (Tc) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | 2.45V @ 250µA | 57 nC @ 4.5 V | ±20V | 5040 pF @ 10 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
|
UPA2815T1S-E2-ATMOSFET P-CH 30V 21A 8HWSON |
10,000 |
|
Tabla de datos |
- | 8-PowerWDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 21A (Tc) | 4.5V, 10V | 11mOhm @ 21A, 10V | - | 47 nC @ 10 V | ±20V | 1760 pF @ 10 V | - | 1.5W (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-HWSON (3.3x3.3) |
|
FQA13N50C-F109MOSFET N-CH 500V 13.5A TO3P |
2,940 |
|
Tabla de datos |
QFET® | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 13.5A (Tc) | 10V | 480mOhm @ 6.75A, 10V | 4V @ 250µA | 56 nC @ 10 V | ±30V | 2055 pF @ 25 V | - | 218W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |
|
|
GSFN0982MOSFET, N-CH, SINGLE, 48A, 100V, |
2,878 |
|
Tabla de datos |
- | 8-PowerWDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 48A (Tc) | 4.5V, 10V | 13.6mOhm @ 20A, 10V | 2.5V @ 250µA | 55 nC @ 10 V | ±20V | 3280 pF @ 50 V | - | 61W (Tc) | -50°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PPAK (3.1x3.1) |
|
AUIRL3705ZSMOSFET N-CH 55V 75A D2PAK |
2,444 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 4.5V, 10V | 8mOhm @ 52A, 10V | 3V @ 250µA | 60 nC @ 5 V | ±16V | 2880 pF @ 25 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
PJQ5442-AU_R2_000A140V N-CHANNEL ENHANCEMENT MODE M |
2,285 |
|
Tabla de datos |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 14A (Ta), 90A (Tc) | 4.5V, 10V | 5.5mOhm @ 20A, 10V | 2.5V @ 250µA | 25 nC @ 4.5 V | ±20V | 1258 pF @ 25 V | - | 2.4W (Ta), 99.3W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | DFN5060-8 |
|
|
G75P04D5MOSFET P-CH 40V 70A DFN5*6-8L |
1,992 |
|
Tabla de datos |
TrenchFET® | 8-PowerTDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 70A (Tc) | 4.5V, 10V | 6mOhm @ -20A, -10V | 2.5V @ 250µA | 106 nC @ 10 V | ±20V | 6697 pF @ 20 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
|
18N20N 200V, RD(MAX)<0.16@10V,VTH1.0V |
1,815 |
|
Tabla de datos |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 190mOhm @ 9A, 10V | 3V @ 250µA | 18 nC @ 10 V | ±20V | 847 pF @ 25 V | - | 65.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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