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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SI2316BDS-T1-BE3N-CHANNEL 30-V (D-S) MOSFET |
10,338 |
|
Tabla de datos |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 3.9A (Ta), 4.5A (Tc) | 4.5V, 10V | 50mOhm @ 3.9A, 10V | 3V @ 250µA | 9.6 nC @ 10 V | ±20V | 350 pF @ 15 V | - | 1.25W (Ta), 1.66W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 (TO-236) |
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RF1S50N06SM9AN-CHANNEL POWER MOSFET |
9,898 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 10V | 22mOhm @ 50A, 10V | 4V @ 250µA | 150 nC @ 20 V | ±20V | 2020 pF @ 25 V | - | 131W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263AB |
|
ISL9N306AD3N-CHANNEL POWER MOSFET |
5,400 |
|
Tabla de datos |
UltraFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 6mOhm @ 50A, 10V | 3V @ 250µA | 90 nC @ 10 V | ±20V | 3400 pF @ 15 V | - | 125W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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GSFD65R900MOSFET, N-CH, SINGLE, 5.00A, 650 |
5,000 |
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Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 5A (Tc) | 10V | 900mOhm @ 2.5A, 10V | 4V @ 250µA | 13 nC @ 10 V | ±30V | 300 pF @ 100 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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GSFD4003MOSFET, N-CH, SINGLE, 240.00A, 4 |
5,000 |
|
Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 6V, 10V | 3mOhm @ 80A, 10V | 3.9V @ 250µA | 108 nC @ 10 V | ±20V | 5700 pF @ 25 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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GSJD60R880MOSFET, N-CH, SINGLE, 5.00A, 600 |
4,995 |
|
Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 5A (Tc) | 10V | 880mOhm @ 2.5A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±30V | 304 pF @ 100 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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BUK9E1R9-40E,127MOSFET N-CH 40V I2PAK |
3,946 |
|
- |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tj) | - | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | - | - | Through Hole | I2PAK |
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G085P02TSP-20V,-8.2A,RD(MAX)<[email protected],V |
4,480 |
|
Tabla de datos |
- | 8-TSSOP (0.173", 4.40mm Width) | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 8.2A (Tc) | 1.8V, 4.5V | 8.5mOhm @ 4.2A, 4.5V | 900mV @ 250µA | 29 nC @ 10 V | ±8V | 1255 pF @ 10 V | - | 1.05W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-TSSOP |
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SI2307BDS-T1-GE3MOSFET P-CH 30V 2.5A SOT23-3 |
4,149 |
|
Tabla de datos |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 2.5A (Ta) | 10V | 78mOhm @ 3.2A, 10V | 3V @ 250µA | 15 nC @ 10 V | ±20V | 380 pF @ 15 V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 (TO-236) |
|
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G300P06SP-CH,-60V,-12A,RD(MAX)<30M@-10V, |
3,391 |
|
Tabla de datos |
- | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 12A (Tc) | 10V | 30mOhm @ 8A, 10V | 3V @ 250µA | 49 nC @ 10 V | ±20V | 2719 pF @ 30 V | - | 3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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IPB034N06N3GN-CHANNEL POWER MOSFET |
3,146 |
|
Tabla de datos |
OptiMOS™ 3 | TO-263-7, D2PAK (6 Leads + Tab) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 10V | 3.4mOhm @ 100A, 10V | 4V @ 93µA | 130 nC @ 10 V | ±20V | 11000 pF @ 30 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-3 |
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FDS6681ZMOSFET P-CH 30V 20A 8SOIC |
3,000 |
|
Tabla de datos |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FDS6570AMOSFET N-CH 20V 15A 8SOIC |
2,900 |
|
Tabla de datos |
* | - | Cut Tape (CT) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
HUF75631SK8N-CHANNEL POWER MOSFET |
2,572 |
|
Tabla de datos |
UltraFET® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 5.5A (Ta) | 10V | 39mOhm @ 5.5A, 10V | 4V @ 250µA | 79 nC @ 20 V | ±20V | 1225 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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IRFR5505TRMOSFET P-CH 55V 18A DPAK |
2,500 |
|
Tabla de datos |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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NTD4804NT4GMOSFET N-CH 30V 124A DPAK |
2,500 |
|
Tabla de datos |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SPD30P06PGMOSFET P-CH 60V 30A DPAK |
2,490 |
|
Tabla de datos |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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RF1S45N06LESM9AN-CHANNEL POWER MOSFET |
1,600 |
|
Tabla de datos |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SI3442BDV-T1-BE3N-CHANNEL 2.5-V (G-S) MOSFET |
1,507 |
|
Tabla de datos |
- | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 3A (Ta) | 2.5V, 4.5V | 57mOhm @ 4A, 4.5V | 1.8V @ 250µA | 5 nC @ 4.5 V | ±12V | 295 pF @ 10 V | - | 860mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-TSOP |
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G40P03KP-30V,RD(MAX)<9.5M@-10V,RD(MAX)< |
1,375 |
|
Tabla de datos |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Tc) | 4.5V, 10V | 10mOhm @ 15A, 10V | 2.5V @ 250µA | 50 nC @ 10 V | ±20V | 2622 pF @ 15 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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