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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IMTA65R020M2HXTMA1SILICON CARBIDE MOSFET |
371 |
|
Tabla de datos |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SCT4026DWAHRTL750V, 51A, 7-PIN SMD, TRENCH-STR |
980 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 51A (Tc) | 18V | 34mOhm @ 29A, 18V | 4.8V @ 15.4mA | 94 nC @ 18 V | +21V, -4V | 2320 pF @ 500 V | - | - | 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7LA |
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C3M0040120K1MOSFET N-CH 1200V 57A TO247-4L |
283 |
|
Tabla de datos |
- | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 57A (Tc) | 15V | 53mOhm @ 31.9A, 15V | 3.8V @ 8.377mA | 94 nC @ 15 V | +19V, -8V | 2726 pF @ 1000 V | - | 242W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
FCH029N65S3-F155MOSFET N-CH 650V 75A TO247-3 |
399 |
|
Tabla de datos |
SuperFET® III | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 75A (Tc) | - | 29mOhm @ 37.5A, 10V | 4.5V @ 7mA | 201 nC @ 10 V | ±30V | 6340 pF @ 400 V | - | 463W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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IMW65R020M2HXKSA1SILICON CARBIDE MOSFET |
163 |
|
Tabla de datos |
CoolSiC™ Gen 2 | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 83A (Tc) | 15V, 20V | 18mOhm @ 46.9A, 20V | 5.6V @ 9.5mA | 57 nC @ 18 V | +23V, -7V | 2038 pF @ 400 V | - | 273W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-3-40 |
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IXFX120N30P3MOSFET N-CH 300V 120A PLUS247-3 |
240 |
|
Tabla de datos |
HiPerFET™, Polar3™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 120A (Tc) | 10V | 27mOhm @ 60A, 10V | 5V @ 4mA | 150 nC @ 10 V | ±20V | 8630 pF @ 25 V | - | 1130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
|
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IMBG40R011M2HXTMA1SIC-MOS |
1,000 |
|
Tabla de datos |
CoolSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 400 V | 13.4A (Ta), 133A (Tc) | 15V, 18V | 14.4mOhm @ 37.1A, 18V | 5.6V @ 13.3mA | 85 nC @ 18 V | +23V, -7V | 3770 pF @ 200 V | - | 3.8W (Ta), 429W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-11 |
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NTH4L018N075SC1SIC MOS TO247-4L 750V |
400 |
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Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 140A (Tc) | 15V, 18V | 18mOhm @ 66A, 18V | 4.3V @ 22mA | 262 nC @ 18 V | +22V, -8V | 5010 pF @ 375 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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NVH4L060N090SC1- |
1,349 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 46A (Tc) | 15V, 18V | 84mOhm @ 20A, 15V | 4.3V @ 5mA | 87 nC @ 15 V | +22V, -8V | 1770 pF @ 450 V | - | 221W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
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NVH4L045N065SC1SIC MOS TO247-4L 650V |
422 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 55A (Tc) | 15V, 18V | 50mOhm @ 25A, 18V | 4.3V @ 8mA | 105 nC @ 18 V | +22V, -8V | 1870 pF @ 325 V | - | 187W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
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SCTW60N120G2DISCRETE |
600 |
|
Tabla de datos |
- | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 60A (Tc) | 18V | 52mOhm @ 30A, 18V | 5V @ 1mA | 94 nC @ 8 V | +18V, -5V | 1969 pF @ 800 V | - | 389W (Tc) | -55°C ~ 200°C (TJ) | - | - | Through Hole | HiP247™ |
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AIMZA75R027M1HXKSA1IGBT |
216 |
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Tabla de datos |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 60A (Tj) | 15V, 20V | 25mOhm @ 24.5A, 20V | 5.6V @ 8.8mA | 49 nC @ 18 V | +23V, -5V | 1668 pF @ 500 V | - | 234W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4 |
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IPDQ60R020CFD7XTMA1HIGH POWER_NEW |
750 |
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Tabla de datos |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 112A (Tc) | 10V | 20mOhm @ 42.4A, 10V | 4.5V @ 2.12mA | 186 nC @ 10 V | ±20V | 7395 pF @ 400 V | - | 543W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
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SICW025N120H-BPSIC MOSFET,TO-247AB |
360 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 86A (Tc) | 20V | 33mOhm @ 40A, 20V | 4.5V @ 50mA | 305 nC @ 20 V | +25V, -10V | 4909 pF @ 800 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AB |
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IMZC120R022M2HXKSA1IMZC120R022M2HXKSA1 |
240 |
|
Tabla de datos |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 80A (Tc) | 15V, 18V | 22mOhm @ 32A, 18V | 5.1V @ 10.1mA | 71 nC @ 18 V | +23V, -7V | 2330 pF @ 800 V | - | 329W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-17 |
|
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SICW025N120H4-BPSIC MOSFET,TO-247-4 |
350 |
|
Tabla de datos |
- | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 86A (Tc) | 20V | 33mOhm @ 40A, 20V | 4.5V @ 50mA | 305 nC @ 20 V | +20V, -5V | 4909 pF @ 800 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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STWA65N023M9N-CHANNEL 650 V, 19.9 MOHM TYP., |
626 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 95A (Tc) | 10V | 23mOhm @ 48A, 10V | 4.2V @ 250µA | 230 nC @ 10 V | ±30V | 8844 pF @ 400 V | - | 463W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 Long Leads |
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C3M0120100J-TRSIC, MOSFET, 120M, 1000V, TO-263 |
780 |
|
Tabla de datos |
C3M™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Last Time Buy | N-Channel | SiCFET (Silicon Carbide) | 1000 V | 22A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 18 nC @ 15 V | +15V, -4V | 414 pF @ 600 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK-7 |
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E3M0075120J2-TR75m, 1200V SiC FET, TO-263-7 XL |
498 |
|
Tabla de datos |
E | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 34A (Tc) | 15V | 97.5mOhm @ 17.9A, 15V | 3.8V @ 5mA | 52 nC @ 15 V | +19V, -8V | 1480 pF @ 1000 V | - | 172W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
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C3M0060065J-TRSIC, MOSFET, 60M, 650V, TO-263-7 |
409 |
|
Tabla de datos |
C3M™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 36A (Tc) | 15V | 79mOhm @ 13.2A, 15V | 3.6V @ 5mA | 46 nC @ 15 V | +15V, -4V | 1020 pF @ 600 V | - | 136W (Tc) | -40°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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