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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IMZC120R040M2HXKSA1IMZC120R040M2HXKSA1 |
240 |
|
Tabla de datos |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 48A (Tc) | 15V, 18V | 40mOhm @ 18A, 18V | 5.1V @ 5.5mA | 39 nC @ 18 V | +23V, -7V | 1310 pF @ 800 V | - | 218W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-17 |
|
|
G3F45MT06J-TR650V 40M TO-263-7 G3F SIC MOSFET |
800 |
|
- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 56A (Tc) | 15V, 18V | 54mOhm @ 20A, 18V | 4.3V @ 8mA | 55 nC @ 18 V | +22V, -10V | 1640 pF @ 400 V | - | 187W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
|
|
G3F65MT12J-TR1200V 65M TO-263-7 G3F SIC MOSFE |
800 |
|
- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 37A (Tc) | 18V | 86mOhm @ 15A, 18V | 4.3V @ 10mA | 55 nC @ 18 V | +22V, -10V | 1298 pF @ 800 V | - | 171W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
|
|
R6061YNZ4C13NCH 600V 61A, TO-247, POWER MOSF |
588 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 61A (Tc) | 10V, 12V | 60mOhm @ 13A, 12V | 6V @ 3.5mA | 76 nC @ 10 V | ±30V | 3700 pF @ 100 V | - | 568W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
|
|
IPT60T022S7XTMA1HIGH POWER_NEW |
218 |
|
Tabla de datos |
CoolMOS™ | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 23A (Tj) | 12V | 22mOhm @ 23A, 12V | 4.5V @ 1.43mA | 150 nC @ 12 V | ±20V | 5640 pF @ 300 V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HSOF-8-2 |
|
|
G3F65MT12K1200V 65M TO-247-4 G3F SIC MOSFE |
600 |
|
- |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 35A (Tc) | 18V | 86mOhm @ 15A, 18V | 4.3V @ 10mA | 55 nC @ 18 V | +22V, -10V | 1298 pF @ 800 V | - | 153W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
|
|
C3M0060075K1SICFET N-CH 750V 35A TO247 |
389 |
|
Tabla de datos |
- | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 35A (Tc) | 15V | 78mOhm @ 13.4A, 15V | 3.8V @ 3.67mA | 52 nC @ 15 V | -8V, +19V | 1203 pF @ 500 V | - | 126W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
|
C3M0160120J-TRSIC, MOSFET, 160M, 1200V, TO-263 |
300 |
|
Tabla de datos |
C3M™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 17A (Tc) | 15V | 208mOhm @ 8.5A, 15V | 3.6V @ 2.33mA | 24 nC @ 15 V | +15V, -4V | 632 pF @ 1000 V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
|
C3M0160120K1MOSFET N-CH 1200V 17.9A TO247-4L |
229 |
|
Tabla de datos |
- | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 17.9A (Tc) | 15V | 208mOhm @ 8.5A, 15V | 3.8V @ 2.33mA | 32 nC @ 15 V | +19V, -8V | 730 pF @ 1000 V | - | 103W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
|
IPQC60T022S7XTMA1HIGH POWER_NEW |
750 |
|
Tabla de datos |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 90A (Tc) | 12V | 22mOhm @ 23A, 12V | 4.5V @ 1.43mA | 150 nC @ 12 V | ±20V | 5640 pF @ 300 V | - | 416W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
|
|
NVHL075N065SC1SILICON CARBIDE (SIC) MOSFET, NC |
446 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 38A (Tc) | 15V, 18V | 85mOhm @ 15A, 18V | 4.3V @ 5mA | 61 nC @ 18 V | +22V, -8V | 1196 pF @ 325 V | - | 148W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
|
STL57N65M5MOSFET N-CH 650V 4.3A 8POWERFLAT |
5,445 |
|
Tabla de datos |
MDmesh™ V | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 4.3A (Ta), 22.5A (Tc) | 10V | 69mOhm @ 20A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±25V | 4200 pF @ 100 V | - | 2.8W (Ta), 189W (Tc) | 150°C (TJ) | - | - | Surface Mount | PowerFlat™ (8x8) HV |
|
|
NSF080120D7A0JNSF080120D7A0/SOT8070/TO263-7L |
797 |
|
- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
SICW040N120H-BPSIC MOSFET,TO-247AB |
360 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 62A (Tc) | 20V | 52mOhm @ 30A, 20V | 4.5V @ 40mA | 229 nC @ 20 V | +25V, -10V | 3619 pF @ 800 V | - | 326W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AB |
|
|
E4M0060075J2-TRMOSFETS 1205 PF 131W 3.8V 50 NC |
494 |
|
Tabla de datos |
E | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 36A (Tc) | 15V | 78mOhm @ 13.4A, 15V | 3.8V @ 3.67mA | 50 nC @ 15 V | +19V, -8V | 1205 pF @ 500 V | - | 131W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
|
|
NVH4L050N65S3FSF3 FRFET AUTO 50MOHM TO-247-4L |
405 |
|
Tabla de datos |
SuperFET® III, FRFET® | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 58A (Tc) | 10V | 50mOhm @ 29A, 10V | 5V @ 1.7mA | 123.8 nC @ 10 V | ±30V | 4855 pF @ 400 V | - | 403W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4L |
|
|
SICW040N120H4-BPSIC MOSFET,TO-247-4 |
360 |
|
Tabla de datos |
- | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 62A (Tc) | 20V | 52mOhm @ 30A, 20V | 4.5V @ 40mA | 229 nC @ 20 V | +20V, -5V | 3619 pF @ 800 V | - | 326W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
E3M0160120KSICFET N-CH 1.2KV 17.9A TO-247-4 |
287 |
|
Tabla de datos |
E | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 17.9A (Tc) | 15V | 208mOhm @ 8.5A, 15V | 3.6V @ 2.33mA | 32 nC @ 15 V | -8V, +19V | 730 pF @ 1000 V | - | 103W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
APT5017BVRGMOSFET N-CH 500V 30A TO247 |
243 |
|
Tabla de datos |
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 30A (Tc) | - | 170mOhm @ 500mA, 10V | 4V @ 1mA | 300 nC @ 10 V | - | 5280 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
|
|
NVH4L075N065SC1SIC MOS TO247-4L 650V |
240 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 38A (Tc) | 15V, 18V | 85mOhm @ 15A, 18V | 4.3V @ 5mA | 61 nC @ 18 V | +22V, -8V | 1196 pF @ 325 V | - | 148W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
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