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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT4F120SMOSFET N-CH 1200V 4A D3PAK |
128 |
|
Tabla de datos |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 4A (Tc) | 10V | 4.2Ohm @ 2A, 10V | 5V @ 500µA | 43 nC @ 10 V | ±30V | 1385 pF @ 25 V | - | 175W (Tc) | - | - | - | Surface Mount | D3PAK |
|
IPTG018N08NM5ATMA1TRENCH 40<-<100V PG-HSOG-8 |
1,784 |
|
Tabla de datos |
OptiMOS™ | 8-PowerSMD, Gull Wing | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 32A (Ta), 253A (Tc) | 6V, 10V | 1.8mOhm @ 150A, 10V | 3.8V @ 159µA | 127 nC @ 10 V | ±20V | 9200 pF @ 40 V | - | 3.8W (Ta), 231W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOG-8-1 |
|
|
RX3R05BBHC16NCH 150V 50A, TO-220AB, POWER MO |
500 |
|
Tabla de datos |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 50A (Tc) | 6V, 10V | 29mOhm @ 25A, 10V | 4V @ 1mA | 37 nC @ 10 V | ±20V | 2150 pF @ 75 V | - | 89W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
|
MCTK105N60FH-TPN-CHANNEL MOSFET,TOLL-8L-KS |
4,000 |
|
Tabla de datos |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 17.5A (Tc) | 10V | 105mOhm @ 15.3A, 10V | 5V @ 2.1mA | 57 nC @ 10 V | ±30V | 2240 pF @ 100 V | - | 107W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TOLL-8L-KS |
|
|
R6061YNXC7GNCH 600V 26A, TO-220FM, POWER MO |
970 |
|
Tabla de datos |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 26A (Tc) | 10V, 12V | 60mOhm @ 13A, 12V | 6V @ 3.5mA | 76 nC @ 10 V | ±30V | 3700 pF @ 100 V | - | 100W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
|
|
ISC035N10NM5LF2ATMA1ISC035N10NM5LF2ATMA1 MOSFET |
4,675 |
|
Tabla de datos |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 19A (Ta), 164A (Tc) | 10V | 3.5mOhm @ 50A, 10V | 3.9V @ 115µA | 88 nC @ 10 V | ±20V | 7200 pF @ 50 V | - | 3W (Ta), 217W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TDSON-8 FL |
|
NTMTS0D7N04CLTXGMOSFET N-CH 40V 67A/433A 8DFNW |
3,000 |
|
Tabla de datos |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 67A (Ta), 433A (Tc) | 4.5V, 10V | 0.63mOhm @ 50A, 10V | 2.5V @ 250µA | 205 nC @ 10 V | ±20V | 12238 pF @ 25 V | - | 4.9W (Ta), 205W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-DFNW (8.3x8.4) |
|
IPA65R125C7XKSA1MOSFET N-CH 650V 10A TO220-FP |
322 |
|
Tabla de datos |
CoolMOS™ C7 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 10A (Tc) | 10V | 125mOhm @ 8.9A, 10V | 4V @ 440µA | 35 nC @ 10 V | ±20V | 1670 pF @ 400 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
|
MSC360SMA120SCT/RMOSFET SIC 1200 V 360 MOHM PSMT |
1,300 |
|
- |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 11A (Tc) | 20V | 450mOhm @ 5A, 20V | 3.14V @ 250µA | 21 nC @ 20 V | +23V, -10V | 255 pF @ 1000 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-268 |
|
|
MSC360SMA120SDT/RMOSFET SIC 1200 V 360 MOHM TO-26 |
795 |
|
Tabla de datos |
mSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 12A (Tc) | 18V, 20V | 450mOhm @ 5A, 20V | 5V @ 250µA | 21 nC @ 20 V | +23V, -10V | 258 pF @ 1.2 kV | - | 92W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
|
IPI60R165CPXKSA1HIGH POWER_LEGACY |
500 |
|
Tabla de datos |
CoolMOS® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 165mOhm @ 12A, 10V | 3.5V @ 790µA | 52 nC @ 10 V | ±20V | 2000 pF @ 100 V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
|
IPZA60R099P7XKSA1MOSFET N-CH 600V 31A TO247-4 |
240 |
|
Tabla de datos |
CoolMOS™ P7 | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 31A (Tc) | 10V | 99mOhm @ 10.5A, 10V | 4V @ 530µA | 45 nC @ 10 V | ±20V | 1952 pF @ 400 V | - | 117W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4 |
|
|
NVMFS5C612NT1GNFET SO8FL 60V 235A 1.5MO |
1,500 |
|
Tabla de datos |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 34A (Ta), 225A (Tc) | 10V | 1.65mOhm @ 50A, 10V | 4V @ 250µA | 62 nC @ 10 V | ±20V | 4900 pF @ 25 V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 5-DFN (5x6) (8-SOFL) |
|
|
NTPF125N65S3HPOWER MOSFET, N-CHANNEL, SUPERFE |
970 |
|
Tabla de datos |
SuperFET® III | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tj) | 10V | 125mOhm @ 12A, 10V | 4V @ 2.1mA | 44 nC @ 10 V | ±30V | 2200 pF @ 400 V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220FP |
|
|
IPBE65R145CFD7AATMA1AUTOMOTIVE PG-TO263-7 |
934 |
|
Tabla de datos |
CoolMOS™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 17A (Tc) | 10V | 145mOhm @ 8.5A, 10V | 4.5V @ 420µA | 36 nC @ 10 V | ±20V | 1694 pF @ 400 V | - | 98W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-7-11 |
|
IPW65R150CFDFKSA2MOSFET N-CH 650V 22.4A TO247-3 |
192 |
|
Tabla de datos |
CoolMOS™ CFD2 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86 nC @ 10 V | ±20V | 2340 pF @ 100 V | - | 195.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-41 |
|
|
TP65H150G4LSGGAN FET N-CH 650V PQFN |
2,674 |
|
Tabla de datos |
- | 3-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 13A (Tc) | 10V | 180mOhm @ 8.5A, 10V | 4.8V @ 500µA | 8 nC @ 10 V | ±20V | 598 pF @ 400 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 3-PQFN (8x8) |
|
|
IPDQ65R099CFD7AXTMA1AUTOMOTIVE_COOLMOS |
460 |
|
Tabla de datos |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 29A (Tc) | 10V | 99mOhm @ 9.7A, 10V | 4.5V @ 480µA | 39 nC @ 10 V | ±20V | 1942 pF @ 400 V | - | 186W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22-1 |
|
|
S1M1000170KMOSFET SILICON CARBIDE SIC 1700V |
300 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1700 V | 5.2A (Tc) | 20V | 1.3Ohm @ 2A, 20V | 4V @ 500µA | 10 nC @ 20 V | +25V, -10V | 160 pF @ 1000 V | - | 81W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
EPC2307TRANS GAN 200V .010OHM 7QFN |
2,839 |
|
- |
eGaN® | 7-PowerWQFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 200 V | 48A (Ta) | 5V | 10mOhm @ 16A, 5V | 2.5V @ 4mA | 10.6 nC @ 5 V | +6V, -4V | 1401 pF @ 100 V | - | - | -40°C ~ 150°C (TJ) | - | - | Surface Mount | 7-QFN (3x5) |
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