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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CSD22204WMOSFET P-CH 8V 5A 9DSBGA Texas Instruments |
5,980 |
|
Tabla de datos |
NexFET™ | 9-UFBGA, DSBGA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 8 V | 5A (Ta) | 2.5V, 4.5V | 9.9mOhm @ 2A, 4.5V | 950mV @ 250µA | 24.6 nC @ 4.5 V | -6V | 1130 pF @ 4 V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 9-DSBGA |
|
|
CSD25202W15MOSFET P-CH 20V 4A 9DSBGA Texas Instruments |
2,590 |
|
Tabla de datos |
NexFET™ | 9-UFBGA, DSBGA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 4A (Ta) | 1.8V, 4.5V | 26mOhm @ 2A, 4.5V | 1.05V @ 250µA | 7.5 nC @ 4.5 V | -6V | 1010 pF @ 10 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 9-DSBGA |
|
CSD17381F4TMOSFET N-CH 30V 3.1A 3PICOSTAR Texas Instruments |
34,264 |
|
Tabla de datos |
FemtoFET™ | 3-XFDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 3.1A (Ta) | 1.8V, 4.5V | 109mOhm @ 500mA, 8V | 1.1V @ 250µA | 1.35 nC @ 4.5 V | 12V | 195 pF @ 15 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 3-PICOSTAR |
|
CSD17327Q5AMOSFET N-CH 30V 65A 8VSON Texas Instruments |
2,427 |
|
Tabla de datos |
NexFET™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 65A (Tc) | 4.5V, 8V | 12.2mOhm @ 11A, 8V | 2V @ 250µA | 3.4 nC @ 4.5 V | ±10V | 506 pF @ 15 V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-VSONP (5x6) |
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CSD18511KTTMOSFET N-CH 40V 194A DDPAK Texas Instruments |
174 |
|
Tabla de datos |
NexFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 194A (Ta) | 4.5V, 10V | 2.6mOhm @ 100A, 10V | 2.4V @ 250µA | 64 nC @ 10 V | ±20V | 5940 pF @ 20 V | - | 188W (Ta) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (DDPAK-3) |
|
CSD23201W10MOSFET P-CH 12V 2.2A 4DSBGA Texas Instruments |
3,804 |
|
Tabla de datos |
NexFET™ | 4-UFBGA, DSBGA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 2.2A (Tc) | 1.5V, 4.5V | 82mOhm @ 500mA, 4.5V | 1V @ 250µA | 2.4 nC @ 4.5 V | -6V | 325 pF @ 6 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-DSBGA (1x1) |
|
CSD17313Q2Q1MOSFET N-CH 30V 5A 6WSON Texas Instruments |
2,788 |
|
Tabla de datos |
NexFET™ | 6-WDFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 5A (Tc) | 3V, 8V | 30mOhm @ 4A, 8V | 1.8V @ 250µA | 2.7 nC @ 4.5 V | +10V, -8V | 340 pF @ 15 V | - | 2.3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-WSON (2x2) |
|
|
CSD25201W15MOSFET P-CH 20V 4A 9DSBGA Texas Instruments |
2,098 |
|
Tabla de datos |
NexFET™ | 9-UFBGA, DSBGA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 4A (Ta) | 1.8V, 4.5V | 40mOhm @ 2A, 4.5V | 1.1V @ 250µA | 5.6 nC @ 4.5 V | -6V | 510 pF @ 10 V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 9-DSBGA |
|
CSD25303W1015MOSFET P-CH 20V 3A 6DSBGA Texas Instruments |
2,801 |
|
Tabla de datos |
NexFET™ | 6-UFBGA, DSBGA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 3A (Tc) | 1.8V, 4.5V | 58mOhm @ 1.5A, 4.5V | 1V @ 250µA | 4.3 nC @ 4.5 V | ±8V | 435 pF @ 10 V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-DSBGA (1x1.5) |
|
TPIC5223LDSMALL SIGNAL N-CHANNEL MOSFET Texas Instruments |
1,177 |
|
Tabla de datos |
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