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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NTB5860NT4GPOWER MOSFET 60V 169A 3.0 MOHM S onsemi |
2,335 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 220A (Tc) | 10V | 3mOhm @ 75A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 10760 pF @ 25 V | - | 283W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
NTD78N03R-35GPOWER MOSFET 25V 78A 6 MOHM SING onsemi |
3,871 |
|
Tabla de datos |
- | TO-251-3 Stub Leads, IPAK | Bulk | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 25 V | 11.4A (Tc) | 4.5V, 11.5V | 5.8mOhm @ 30A, 11.5V | 3V @ 250µA | 24 nC @ 4.5 V | ±20V | 1794 pF @ 12 V | - | 1.4W (Ta), 76.9W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
|
NVBG150N65S3FSINGLE N-CHANNEL POWER MOSFET SU onsemi |
4,347 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Bulk | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 150mOhm @ 12A, 10V | 5V @ 540µA | 45 nC @ 10 V | ±30V | 2170 pF @ 400 V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | D2PAK-7 |
|
|
FDC642P-F085PBKP-CHANNEL POWERTRENCH MOSFET, -2 onsemi |
2,122 |
|
Tabla de datos |
PowerTrench® | SOT-23-6 Thin, TSOT-23-6 | Bulk | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 20 V | 4A (Ta) | 2.5V, 4.5V | 65mOhm @ 4A, 4.5V | 1.5V @ 250µA | 9 nC @ 4.5 V | ±8V | 630 pF @ 10 V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TSOT-23-6 |
|
|
NTD5C684NLT4GSINGLE N-CHANNEL LOGIC LEVEL POW onsemi |
4,571 |
|
Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 10A (Ta), 27A (Tc) | 4.5V, 10V | 16.5mOhm @ 15A, 10V | 2.1V @ 20µA | 9.6 nC @ 10 V | ±20V | 700 pF @ 25 V | - | 3.6W (Ta), 25W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | DPAK |
|
|
NTH4LN061N60S5HPOWER MOSFET, N-CHANNEL, SUPERFE onsemi |
2,486 |
|
Tabla de datos |
- | TO-247-4 | Bulk | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 600 V | 41A (Tc) | 10V | 61mOhm @ 20.5A, 10V | 4.3V @ 4.4mA | 74.2 nC @ 10 V | ±30V | 4157 pF @ 400 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4L |
|
|
NVMFS003N10MCT1GMOSFET - POWER, SINGLE, N-CHANNE onsemi |
2,719 |
|
- |
- | 8-PowerTDFN, 5 Leads | Bulk | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100 V | 23.7A (Ta), 169A (Tc) | 10V | 3.1mOhm @ 50A, 10V | 4V @ 351µA | 62 nC @ 10 V | ±20V | 4650 pF @ 50 V | - | 3.8W (Ta), 194W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 5-DFN (5x6) (8-SOFL) |
|
|
STDV5804NT4GPOWER MOSFET 40V, 69A, 8.5 MOHM, onsemi |
4,137 |
|
Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 40 V | 69A (Tc) | 5V, 10V | 7.5mOhm @ 30A, 10V | 3.5V @ 250µA | 45 nC @ 10 V | ±20V | 2850 pF @ 25 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | DPAK |
|
|
FDD86069-F085N-CHANNEL POWERTRENCH MOSFET 100 onsemi |
4,527 |
|
Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100 V | 10.9A (Ta), 51A (Tc) | 10V | 10.5mOhm @ 19.5A, 10V | 4.5V @ 109µA | 19 nC @ 10 V | ±20V | 1332 pF @ 50 V | - | 3.1W (Ta), 68.2W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252 (DPAK) |
|
|
NVH4L200N170M1SILICON CARBIDE (SIC) MOSFET EL onsemi |
2,222 |
|
Tabla de datos |
- | TO-247-4 | Bulk | Discontinued at Digi-Key | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1700 V | 13A (Tc) | 20V | 290mOhm @ 8.5A, 20V | 4.3V @ 2.6mA | 31 nC @ 20 V | +25V, -15V | 596 pF @ 1000 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
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