制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
FQD5P20TM_F080MOSFET P-CH 200V 3.7A DPAK onsemi |
3,134 | - |
|
- |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 200 V | 3.7A (Tc) | 10V | 1.4Ohm @ 1.85A, 10V | 5V @ 250µA | 13 nC @ 10 V | ±30V | 430 pF @ 25 V | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
![]() |
FQD6N50CTM_F080MOSFET N-CH 500V 4.5A DPAK onsemi |
3,806 | - |
|
![]() Tabla de datos |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.5A (Tc) | 10V | 1.2Ohm @ 2.25A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±30V | 700 pF @ 25 V | - | 2.5W (Ta), 61W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
![]() |
FQD7N20TM_F080MOSFET N-CH 200V 5.3A DPAK onsemi |
4,626 | - |
|
![]() Tabla de datos |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 5.3A (Tc) | 10V | 690mOhm @ 2.65A, 10V | 5V @ 250µA | 10 nC @ 10 V | ±30V | 400 pF @ 25 V | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
![]() |
FQD7P20TM_F080MOSFET P-CH 200V 5.7A DPAK onsemi |
3,713 | - |
|
- |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 200 V | 5.7A (Tc) | 10V | 690mOhm @ 2.85A, 10V | 5V @ 250µA | 25 nC @ 10 V | ±30V | 770 pF @ 25 V | - | 2.5W (Ta), 55W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
![]() |
FQD8P10TM_F080MOSFET P-CH 100V 6.6A DPAK onsemi |
2,687 | - |
|
- |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 6.6A (Tc) | 10V | 530mOhm @ 3.3A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±30V | 470 pF @ 25 V | - | 2.5W (Ta), 44W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
![]() |
FQH44N10-F133MOSFET N-CH 100V 48A TO247-3 onsemi |
3,299 | - |
|
![]() Tabla de datos |
QFET® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 48A (Tc) | 10V | 39mOhm @ 24A, 10V | 4V @ 250µA | 62 nC @ 10 V | ±25V | 1800 pF @ 25 V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
![]() |
FQP19N20C_F080MOSFET N-CH 200V 19A TO220-3 onsemi |
3,434 | - |
|
- |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 19A (Tc) | 10V | 170mOhm @ 9.5A, 10V | 4V @ 250µA | 53 nC @ 10 V | ±30V | 1080 pF @ 25 V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
![]() |
FQP32N20C_F080MOSFET N-CH 200V 28A TO220-3 onsemi |
2,270 | - |
|
![]() Tabla de datos |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 28A (Tc) | 10V | 82mOhm @ 14A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±30V | 2200 pF @ 25 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
![]() |
FQP6N60C_F080MOSFET N-CH 600V 5.5A TO220-3 onsemi |
2,049 | - |
|
![]() Tabla de datos |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 5.5A (Tc) | 10V | 2Ohm @ 2.75A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±30V | 810 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
![]() |
FQPF3N90_NLMOSFET N-CH 900V 2.1A TO220F onsemi |
4,439 | - |
|
![]() Tabla de datos |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 2.1A (Tc) | 10V | 4.25Ohm @ 1.05A, 10V | 5V @ 250µA | 26 nC @ 10 V | ±30V | 910 pF @ 25 V | - | 43W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |