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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NTBG080N120SC1SICFET N-CH 1200V 30A D2PAK-7 onsemi |
1,035 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 20V | 110mOhm @ 20A, 20V | 4.3V @ 5mA | 56 nC @ 20 V | +25, -15V | 1154 pF @ 800 V | - | 179W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK-7 |
|
NVBG075N065SC1SIC MOS D2PAK-7L 650V onsemi |
3,116 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 37A (Tc) | 15V, 18V | 85mOhm @ 15A, 18V | 4.3V @ 5mA | 59 nC @ 18 V | - | 1191 pF @ 325 V | - | 139W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | D2PAK-7 |
|
FCH040N65S3-F155MOSFET N-CH 650V 65A TO247-3 onsemi |
1,010 |
|
Tabla de datos |
SuperFET® III | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 65A (Tc) | 10V | 40mOhm @ 32.5A, 10V | 4.5V @ 6.5mA | 136 nC @ 10 V | ±30V | 4740 pF @ 400 V | - | 417W (Tc) | -55°C ~ 150°C | - | - | Through Hole | TO-247-3 |
|
FCH041N60EMOSFET N-CH 600V 77A TO247-3 onsemi |
430 |
|
Tabla de datos |
SuperFET® II | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 77A (Tc) | 10V | 41mOhm @ 39A, 10V | 3.5V @ 250µA | 380 nC @ 10 V | ±20V | 13700 pF @ 100 V | - | 592W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
NVHL040N65S3FMOSFET N-CH 650V 65A TO247-3 onsemi |
573 |
|
Tabla de datos |
SuperFET® III, FRFET® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 65A (Tc) | 10V | 40mOhm @ 32.5A, 10V | 5V @ 2.1mA | 153 nC @ 10 V | ±30V | 5875 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
|
FCH041N65F-F085MOSFET N-CH 650V 76A TO247-3 onsemi |
306 |
|
Tabla de datos |
SuperFET® II | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 76A (Tc) | 10V | 41mOhm @ 38A, 10V | 5V @ 250µA | 304 nC @ 10 V | ±20V | 13566 pF @ 25 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
|
|
NVBG080N120SC1SICFET N-CH 1200V 30A D2PAK-7 onsemi |
580 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 20V | 110mOhm @ 20A, 20V | 4.3V @ 5mA | 56 nC @ 20 V | +25V, -15V | 1154 pF @ 800 V | - | 179W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | D2PAK-7 |
|
NVH4L040N120SC1SICFET N-CH 1200V 58A TO247-4 onsemi |
221 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 58A (Tc) | 20V | 56mOhm @ 35A, 20V | 4.3V @ 10mA | 106 nC @ 20 V | +25V, -15V | 1762 pF @ 800 V | - | 319W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
|
NTBG025N065SC1SILICON CARBIDE (SIC) MOSFET - 1 onsemi |
2,245 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 106A (Tc) | 15V, 18V | 28.5mOhm @ 45A, 18V | 4.3V @ 15.5mA | 164 nC @ 18 V | +22V, -8V | 3480 pF @ 325 V | - | 395W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK-7 |
|
|
NTHL027N65S3HFMOSFET N-CH 650V 75A TO247-3 onsemi |
703 |
|
Tabla de datos |
FRFET®, SuperFET® III | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 75A (Tc) | 10V | 27.4mOhm @ 35A, 10V | 5V @ 3mA | 225 nC @ 10 V | ±30V | 7630 pF @ 400 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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