制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
NVMFWS002N10MCLT1GPTNG 100V LL SO8FL HE onsemi |
4,317 | - |
|
![]() Tabla de datos |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 25A (Ta), 177A (Tc) | 4.5V, 10V | 2.8mOhm @ 50A, 10V | 3V @ 351µA | 97 nC @ 10 V | ±20V | 7200 pF @ 50 V | - | 3.8W (Ta), 194W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | 5-DFNW (4.9x5.9) (8-SOFL-WF) |
![]() |
NVMJST1D4N06CLTXGTRENCH 6 60V LFPAK 5X7 onsemi |
3,371 | - |
|
![]() Tabla de datos |
- | 10-PowerLSOP (0.209", 5.30mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 42A (Ta), 198A (Tc) | 10V | 1.49mOhm @ 50A, 10V | 2V @ 250µA | 92.2 nC @ 10 V | ±20V | 6555 pF @ 25 V | - | 5.3W (Ta), 116W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 10-TCPAK |
![]() |
NVMFWS1D5N08XT1GT10S 80V SG NCH MOSFET SO8FL HE onsemi |
4,905 | - |
|
![]() Tabla de datos |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 253A (Tc) | 10V | 1.43mOhm @ 50A, 10V | 3.6V @ 330µA | 83 nC @ 10 V | ±20V | 5880 pF @ 40 V | - | 194W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | 5-DFNW (4.9x5.9) (8-SOFL-WF) |
![]() |
NVMFS5C410NLWFET1GT6 40V SO8FL onsemi |
2,550 | - |
|
![]() Tabla de datos |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Ta), 330A (Tc) | 4.5V, 10V | 0.82mOhm @ 50A, 10V | 2V @ 250µA | 143 nC @ 10 V | ±20V | 8862 pF @ 25 V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | 5-DFN (5x6) (8-SOFL) |
![]() |
NVMFS5C410NWFET1GT6-40V N 0.92 MOHMS SL onsemi |
2,007 | - |
|
![]() Tabla de datos |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 46A (Ta), 300A (Tc) | 10V | 0.92mOhm @ 50A, 10V | 3.5V @ 250µA | 86 nC @ 10 V | ±20V | 6100 pF @ 25 V | - | 3.9W (Ta), 166W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | 5-DFN (5x6) (8-SOFL) |
![]() |
NVMFS4C308NWFT1GTRENCH 30V NCH onsemi |
2,907 | - |
|
![]() Tabla de datos |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 17.2A (Ta), 55A (Tc) | 4.5V, 10V | 4.8mOhm @ 30A, 10V | 2.1V @ 250µA | 18.2 nC @ 10 V | ±20V | 1670 pF @ 15 V | - | 3W (Ta), 30.6W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | 5-DFNW (4.9x5.9) (8-SOFL-WF) |
![]() |
NVMFS5C406NWFT1GMOSFET N-CH 40V 52A/353A 5DFN onsemi |
2,659 | - |
|
![]() Tabla de datos |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 52A (Ta), 353A (Tc) | 10V | 0.8mOhm @ 50A, 10V | 4V @ 280µA | 110 nC @ 10 V | ±20V | 7288 pF @ 20 V | - | 3.9W (Ta), 179W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | 5-DFNW (4.9x5.9) (8-SOFL-WF) |
![]() |
NVMFS5C404NLWFET1GT6-40V N 0.67 MOHMS LL onsemi |
2,123 | - |
|
![]() Tabla de datos |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 52A (Ta), 370A (Tc) | 4.5V, 10V | 0.67mOhm @ 50A, 10V | 2V @ 250µA | 181 nC @ 10 V | ±20V | 12168 pF @ 25 V | - | 3.9W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | 5-DFN (5x6) (8-SOFL) |
![]() |
NTBG023N065M3SSIC MOS D2PAK-7L 23MOHM 650V M3S onsemi |
2,339 | - |
|
![]() Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 40A (Tc) | 15V, 18V | 33mOhm @ 20A, 18V | 4V @ 10mA | 69 nC @ 18 V | +22V, -8V | 1951 pF @ 400 V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK-7 |
![]() |
NVBG032N065M3SSIC MOS D2PAK-7L 32MOHM 650V M3S onsemi |
3,373 | - |
|
- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 52A (Tc) | 15V, 18V | 44mOhm @ 15A, 18V | 4V @ 7.5mA | 55 nC @ 18 V | +22V, -8V | 1409 pF @ 400 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | D2PAK-7 |