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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF6215LMOSFET P-CH 150V 13A TO262 |
2,167 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 150 V | 13A (Tc) | 10V | 290mOhm @ 6.6A, 10V | 4V @ 250µA | 66 nC @ 10 V | ±20V | 860 pF @ 25 V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
|
IRF9540NLMOSFET P-CH 100V 23A TO262 |
4,108 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 23A (Tc) | 10V | 117mOhm @ 11A, 10V | 4V @ 250µA | 97 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.8W (Ta), 140W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 |
|
|
IRF9Z34NLMOSFET P-CH 55V 19A TO262 |
3,038 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 55 V | 19A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±20V | 620 pF @ 25 V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
IRF7534D1MOSFET P-CH 20V 4.3A MICRO8 |
3,866 |
|
Tabla de datos |
FETKY™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.3A (Ta) | 2.5V, 4.5V | 55mOhm @ 4.3A, 4.5V | 1.2V @ 250µA | 15 nC @ 5 V | ±12V | 1066 pF @ 10 V | Schottky Diode (Isolated) | 1.25W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Micro8™ |
|
|
IRF7526D1MOSFET P-CH 30V 2A MICRO8 |
2,216 |
|
Tabla de datos |
FETKY™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 2A (Ta) | 4.5V, 10V | 200mOhm @ 1.2A, 10V | 1V @ 250µA | 11 nC @ 10 V | ±20V | 180 pF @ 25 V | Schottky Diode (Isolated) | 1.25W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Micro8™ |
|
IRF1310NSTRRMOSFET N-CH 100V 42A D2PAK |
3,484 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 42A (Tc) | 10V | 36mOhm @ 22A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 1900 pF @ 25 V | - | 3.8W (Ta), 160W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
|
IRF3315STRRMOSFET N-CH 150V 21A D2PAK |
2,770 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 21A (Tc) | 10V | 82mOhm @ 12A, 10V | 4V @ 250µA | 95 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
|
IRF3415STRRMOSFET N-CH 150V 43A D2PAK |
4,399 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 43A (Tc) | 10V | 42mOhm @ 22A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
|
IRF3704STRLMOSFET N-CH 20V 77A D2PAK |
2,681 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 77A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 19 nC @ 4.5 V | ±20V | 1996 pF @ 10 V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
|
IRF520NSTRLMOSFET N-CH 100V 9.7A D2PAK |
4,212 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 9.7A (Tc) | 10V | 200mOhm @ 5.7A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±20V | 330 pF @ 25 V | - | 3.8W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
|
IRF520NSTRRMOSFET N-CH 100V 9.7A D2PAK |
2,014 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 9.7A (Tc) | 10V | 200mOhm @ 5.7A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±20V | 330 pF @ 25 V | - | 3.8W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRF520STRRMOSFET N-CH 100V 9.2A D2PAK |
4,440 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 9.2A (Tc) | 10V | 270mOhm @ 5.5A, 10V | 4V @ 250µA | 16 nC @ 10 V | ±20V | 360 pF @ 25 V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRF530LMOSFET N-CH 100V 14A TO262 |
2,153 |
|
Tabla de datos |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 14A (Tc) | 10V | 160mOhm @ 8.4A, 10V | 4V @ 250µA | 26 nC @ 10 V | ±20V | 670 pF @ 25 V | - | - | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
|
IRF540LMOSFET N-CH 100V 28A TO262 |
4,448 |
|
Tabla de datos |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 28A (Tc) | 10V | 77mOhm @ 17A, 10V | 4V @ 250µA | 72 nC @ 10 V | ±20V | 1700 pF @ 25 V | - | - | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
|
IRF614LMOSFET N-CH 250V 2.7A TO262 |
4,777 |
|
- |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 2.7A (Tc) | 10V | 2Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 |
|
|
IRF624LMOSFET N-CH 250V 4.4A I2PAK |
2,542 |
|
Tabla de datos |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 4.4A (Tc) | 10V | 1.1Ohm @ 2.6A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 260 pF @ 25 V | - | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | I2PAK |
|
|
IRF630LMOSFET N-CH 200V 9A I2PAK |
2,382 |
|
Tabla de datos |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 9A (Tc) | 10V | 400mOhm @ 5.4A, 10V | 4V @ 250µA | 43 nC @ 10 V | ±20V | 800 pF @ 25 V | - | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | I2PAK |
|
|
IRF634LMOSFET N-CH 250V 8.1A I2PAK |
2,283 |
|
Tabla de datos |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 8.1A (Tc) | 10V | 450mOhm @ 5.1A, 10V | 4V @ 250µA | 41 nC @ 10 V | ±20V | 770 pF @ 25 V | - | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | I2PAK |
|
IRF7207TRMOSFET P-CH 20V 5.4A 8SO |
2,269 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 5.4A (Tc) | 2.7V, 4.5V | 60mOhm @ 5.4A, 4.5V | 700mV @ 250µA (Min) | 22 nC @ 4.5 V | ±12V | 780 pF @ 15 V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IRF7322D1TRMOSFET P-CH 20V 5.3A 8SO |
2,498 |
|
Tabla de datos |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 5.3A (Ta) | 2.7V, 4.5V | 62mOhm @ 2.9A, 4.5V | 700mV @ 250µA (Min) | 29 nC @ 4.5 V | ±12V | 780 pF @ 15 V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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