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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APTM50SKM19GMOSFET N-CH 500V 163A SP6 |
3,038 |
|
Tabla de datos |
- | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 163A (Tc) | 10V | 22.5mOhm @ 81.5A, 10V | 5V @ 10mA | 492 nC @ 10 V | ±30V | 22400 pF @ 25 V | - | 1136W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
|
APTM20DAM05GMOSFET N-CH 200V 317A SP6 |
4,456 |
|
Tabla de datos |
- | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 317A (Tc) | 10V | 6mOhm @ 158.5A, 10V | 5V @ 10mA | 448 nC @ 10 V | ±30V | 27400 pF @ 25 V | - | 1136W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
|
|
APTM120U10DAGMOSFET N-CH 1200V 160A SP6 |
2,162 |
|
Tabla de datos |
- | SP6 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1200 V | 160A (Tc) | 10V | 120mOhm @ 58A, 10V | 5V @ 20mA | 1100 nC @ 10 V | ±30V | 28900 pF @ 25 V | - | 3290W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
|
2N7638-GATRANS SJT 650V 8A TO276 |
4,446 |
|
Tabla de datos |
- | TO-276AA | Bulk | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 650 V | 8A (Tc) (158°C) | - | 170mOhm @ 8A | - | - | - | 720 pF @ 35 V | - | 200W (Tc) | -55°C ~ 225°C (TJ) | - | - | Surface Mount | TO-276 |
|
2N7637-GATRANS SJT 650V 7A TO257 |
4,743 |
|
- |
- | TO-257-3 | Bulk | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 650 V | 7A (Tc) (165°C) | - | 170mOhm @ 7A | - | - | - | 720 pF @ 35 V | - | 80W (Tc) | -55°C ~ 225°C (TJ) | - | - | Through Hole | TO-257 |
|
|
APTM20DAM04GMOSFET N-CH 200V 372A SP6 |
2,375 |
|
Tabla de datos |
- | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 372A (Tc) | 10V | 5mOhm @ 186A, 10V | 5V @ 10mA | 560 nC @ 10 V | ±30V | 28900 pF @ 25 V | - | 1250W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
|
APTM20SKM04GMOSFET N-CH 200V 372A SP6 |
4,650 |
|
Tabla de datos |
- | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 372A (Tc) | 10V | 5mOhm @ 186A, 10V | 5V @ 10mA | 560 nC @ 10 V | ±30V | 28900 pF @ 25 V | - | 1250W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
|
|
APTM100DAM90GMOSFET N-CH 1000V 78A SP6 |
2,119 |
|
Tabla de datos |
- | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 78A (Tc) | 10V | 105mOhm @ 39A, 10V | 5V @ 10mA | 744 nC @ 10 V | ±30V | 20700 pF @ 25 V | - | 1250W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
|
|
APTM50DAM17GMOSFET N-CH 500V 180A SP6 |
3,652 |
|
Tabla de datos |
- | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 180A (Tc) | 10V | 20mOhm @ 90A, 10V | 5V @ 10mA | 560 nC @ 10 V | ±30V | 28000 pF @ 25 V | - | 1250W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
|
|
APTM50SKM17GMOSFET N-CH 500V 180A SP6 |
3,900 |
|
Tabla de datos |
- | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 180A (Tc) | 10V | 20mOhm @ 90A, 10V | 5V @ 10mA | 560 nC @ 10 V | ±30V | 28000 pF @ 25 V | - | 1250W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
|
|
APTM10DAM02GMOSFET N-CH 100V 495A SP6 |
3,542 |
|
Tabla de datos |
- | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 495A (Tc) | 10V | 2.5mOhm @ 200A, 10V | 4V @ 10mA | 1360 nC @ 10 V | ±30V | 40000 pF @ 25 V | - | 1250W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
|
|
APTM10SKM02GMOSFET N-CH 100V 495A SP6 |
4,012 |
|
Tabla de datos |
- | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 495A (Tc) | 10V | 2.5mOhm @ 200A, 10V | 4V @ 10mA | 1360 nC @ 10 V | ±30V | 40000 pF @ 25 V | - | 1250W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
|
GA100JT17-227TRANS SJT 1700V 160A SOT227 |
4,434 |
|
- |
- | SOT-227-4, miniBLOC | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1700 V | 160A (Tc) | - | 10mOhm @ 100A | - | - | - | 14400 pF @ 800 V | - | 535W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 |
|
|
2N7640-GATRANS SJT 650V 16A TO276 |
2,132 |
|
- |
- | TO-276AA | Bulk | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 650 V | 16A (Tc) (155°C) | - | 105mOhm @ 16A | - | - | - | 1534 pF @ 35 V | - | 330W (Tc) | -55°C ~ 225°C (TJ) | - | - | Surface Mount | TO-276 |
|
|
2N7639-GATRANS SJT 650V 15A TO257 |
4,362 |
|
Tabla de datos |
- | TO-257-3 | Bulk | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 650 V | 15A (Tc) (155°C) | - | 105mOhm @ 15A | - | - | - | 1534 pF @ 35 V | - | 172W (Tc) | -55°C ~ 225°C (TJ) | - | - | Through Hole | TO-257 |
|
IXFN90N170SKSICFET N-CH 1700V 90A SOT227B |
4,411 |
|
Tabla de datos |
- | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 90A (Tc) | 20V | 35mOhm @ 100A, 20V | 4V @ 36mA | 376 nC @ 20 V | +20V, -5V | 7340 pF @ 1000 V | - | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
APTM20UM04SAGMOSFET N-CH 200V 417A SP6 |
3,968 |
|
Tabla de datos |
- | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 417A (Tc) | 10V | 5mOhm @ 208.5A, 10V | 5V @ 10mA | 560 nC @ 10 V | ±30V | 28800 pF @ 25 V | - | 1560W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
|
|
JAN2N6898MOSFET P-CHANNEL 100V 25A TO3 |
4,607 |
|
- |
- | TO-204AA, TO-3 | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 25A (Tc) | 10V | 200mOhm @ 15.8A, 10V | 4V @ 250µA | - | ±20V | 3000 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Military | - | Through Hole | TO-3 |
|
|
APTM10UM02FAGMOSFET N-CH 100V 570A SP6 |
3,132 |
|
- |
- | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 570A (Tc) | 10V | 2.5mOhm @ 200A, 10V | 4V @ 10mA | 1360 nC @ 10 V | ±30V | 40000 pF @ 25 V | - | 1660W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
|
|
VMO550-01FMOSFET N-CH 100V 590A Y3-DCB |
2,837 |
|
- |
HiPerFET™ | Y3-DCB | Box | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 590A (Tc) | 10V | 2.1mOhm @ 500mA, 10V | 6V @ 110mA | 2000 nC @ 10 V | ±20V | 50000 pF @ 25 V | - | 2200W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Y3-DCB |
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