Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IPB47N10SL26ATMA1MOSFET N-CH 100V 47A TO263-3 |
3,587 |
|
![]() Tabla de datos |
SIPMOS® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 47A (Tc) | 4.5V, 10V | 26mOhm @ 33A, 10V | 2V @ 2mA | 135 nC @ 10 V | ±20V | 2500 pF @ 25 V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
![]() |
IRFH5053TR2PBFMOSFET N-CH 100V 9.3A PQFN56 |
2,716 |
|
![]() Tabla de datos |
- | 8-PowerVDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 9.3A (Ta), 46A (Tc) | - | 18mOhm @ 9.3A, 10V | 4.9V @ 100µA | 36 nC @ 10 V | - | 1510 pF @ 50 V | - | - | - | - | - | Surface Mount | PQFN (5x6) Single Die |
![]() |
SI4190DY-T1-GE3MOSFET N-CH 100V 20A 8-SOIC |
3,818 |
|
![]() Tabla de datos |
- | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 20A (Tc) | - | 8.8mOhm @ 15A, 10V | 2.8V @ 250µA | 58 nC @ 10 V | - | 2000 pF @ 50 V | - | - | - | - | - | Surface Mount | 8-SOIC |
![]() |
IRFS23N20DMOSFET N-CH 200V 24A D2PAK |
2,943 |
|
![]() Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 24A (Tc) | 10V | 100mOhm @ 14A, 10V | 5.5V @ 250µA | 86 nC @ 10 V | ±30V | 1960 pF @ 25 V | - | 3.8W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
![]() |
IRFS4410MOSFET N-CH 100V 96A D2PAK |
4,261 |
|
![]() Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 96A (Tc) | 10V | 10mOhm @ 58A, 10V | 4V @ 150µA | 180 nC @ 10 V | ±20V | 5150 pF @ 50 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
![]() |
IXTA220N075T7MOSFET N-CH 75V 220A TO263-7 |
4,474 |
|
- |
TrenchMV™ | TO-263-7, D2PAK (6 Leads + Tab) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 220A (Tc) | 10V | 4.5mOhm @ 25A, 10V | 4V @ 250µA | 165 nC @ 10 V | ±20V | 7700 pF @ 25 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 (IXTA) |
|
IXTP12N70X2MOSFET N-CH 700V 12A TO220AB |
4,587 |
|
![]() Tabla de datos |
Ultra X2 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 12A (Tc) | 10V | 300mOhm @ 6A, 10V | 4.5V @ 250µA | 19 nC @ 10 V | ±30V | 960 pF @ 25 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
![]() |
IXTP12N70X2MMOSFET N-CH 700V 12A TO220 |
4,511 |
|
![]() Tabla de datos |
Ultra X2 | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 12A (Tc) | 10V | 300mOhm @ 6A, 10V | 4.5V @ 250µA | 19 nC @ 10 V | ±30V | 960 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Isolated Tab |
![]() |
IRFP4332PBFXKMA1TRENCH >=100V |
3,796 |
|
- |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 57A (Tc) | 10V | 33mOhm @ 35A, 10V | 5V @ 250µA | 150 nC @ 10 V | ±30V | 5860 pF @ 25 V | - | 360W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
![]() |
RSS090P03TBMOSFET P-CH 30V 9A 8SOP |
3,445 |
|
![]() Tabla de datos |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta) | 4V, 10V | 14mOhm @ 9A, 10V | 2.5V @ 1mA | 39 nC @ 5 V | ±20V | 4000 pF @ 10 V | - | 2W (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-SOP |
![]() |
IPB60R385CPATMA1MOSFET N-CH 600V 9A TO263-3 |
3,839 |
|
![]() Tabla de datos |
CoolMOS™ CP | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 385mOhm @ 5.2A, 10V | 3.5V @ 340µA | 22 nC @ 10 V | ±20V | 790 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
![]() |
HAT2266H-EL-EMOSFET N-CH 60V 30A LFPAK |
3,860 |
|
![]() Tabla de datos |
- | SC-100, SOT-669 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 30A (Ta) | 4.5V, 10V | 12mOhm @ 15A, 10V | 2.5V @ 1mA | 25 nC @ 4.5 V | ±20V | 3600 pF @ 10 V | - | 23W (Tc) | 150°C (TJ) | - | - | Surface Mount | LFPAK |
![]() |
AOB600A70FLMOSFET N-CH 700V 8.5A TO263 |
2,782 |
|
![]() Tabla de datos |
aMOS5™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 8.5A (Tc) | 10V | 600mOhm @ 2.5A, 10V | 4V @ 250µA | 14.5 nC @ 10 V | ±20V | 900 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
![]() |
AOB600A70LMOSFET N-CH 700V 8.5A TO263 |
3,331 |
|
![]() Tabla de datos |
aMOS5™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 8.5A (Tc) | 10V | 600mOhm @ 2.5A, 10V | 3.5V @ 250µA | 15.5 nC @ 10 V | ±20V | 870 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
![]() |
DIW012N65MOSFET TO-247-3L N 650V 12A |
3,308 |
|
![]() Tabla de datos |
- | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 190mOhm @ 40A, 10V | 4V @ 250µA | 45 nC @ 10 V | ±30V | 1479 pF @ 34 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
![]() |
DI200N04D2MOSFET D2PAK N 40V 200A |
4,550 |
|
![]() Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 200A (Tc) | 10V | 1.55mOhm @ 120A, 10V | 4V @ 250µA | 90 nC @ 10 V | ±20V | 5832 pF @ 20 V | - | 225W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263AB (D2PAK) |
![]() |
R6015ANZC8MOSFET N-CH 600V 15A TO3PF |
4,823 |
|
![]() Tabla de datos |
- | TO-3P-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 300mOhm @ 7.5A, 10V | 4.15V @ 1mA | 50 nC @ 10 V | ±30V | 1700 pF @ 25 V | - | 110W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3PF |
|
STP14NM65NMOSFET N-CH 650V 12A TO220AB |
2,463 |
|
![]() Tabla de datos |
MDmesh™ II | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 45 nC @ 10 V | ±25V | 1300 pF @ 50 V | - | 125W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
![]() |
SIHB12N50C-E3MOSFET N-CH 500V 12A D2PAK |
4,852 |
|
![]() Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 12A (Tc) | 10V | 555mOhm @ 4A, 10V | 5V @ 250µA | 48 nC @ 10 V | ±30V | 1375 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
![]() |
EPC2025GANFET N-CH 300V 4A DIE |
2,865 |
|
- |
eGaN® | Die | Tape & Reel (TR) | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 300 V | 4A (Ta) | 5V | 150mOhm @ 3A, 5V | 2.5V @ 1mA | - | +6V, -4V | 194 pF @ 240 V | - | - | -40°C ~ 150°C (TJ) | - | - | Surface Mount | Die |