制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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R802100002200V 9.3M N-CH POWER MOSFET WAFE |
2,859 | - |
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- |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRF7492MOSFET N-CH 200V 3.7A 8SO |
3,129 | - |
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HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.7A (Ta) | 10V | 79mOhm @ 2.2A, 10V | 2.5V @ 250µA | 59 nC @ 10 V | ±20V | 1820 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IXTY1N120PTRLMOSFET N-CH 1200V 1A TO252 |
2,071 | - |
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- |
Polar | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1200 V | 1A (Tc) | 10V | 20Ohm @ 500mA, 10V | 4.5V @ 50µA | 17.6 nC @ 10 V | ±30V | 445 pF @ 25 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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IXTA1N100MOSFET N-CH 1000V 1.5A TO263 |
4,969 | - |
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 1.5A (Tc) | 10V | 11Ohm @ 1A, 10V | 4.5V @ 25µA | 14.5 nC @ 10 V | ±30V | 400 pF @ 25 V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263AA |
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IRF3515STRLMOSFET N-CH 150V 41A D2PAK |
4,628 | - |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 41A (Tc) | 10V | 45mOhm @ 25A, 10V | 4.5V @ 250µA | 107 nC @ 10 V | ±30V | 2260 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IXTA10P15TMOSFET P-CH 150V 10A TO263 |
3,234 | - |
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TrenchP™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 10A (Tc) | 10V | 350mOhm @ 5A, 10V | 4.5V @ 250µA | 36 nC @ 10 V | ±15V | 2210 pF @ 25 V | - | 83W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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HUFA75345G3MOSFET N-CH 55V 75A TO247-3 |
3,287 | - |
|
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UltraFET™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 7mOhm @ 75A, 10V | 4V @ 250µA | 275 nC @ 20 V | ±20V | 4000 pF @ 25 V | - | 325W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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ZXMN6A09KTCMOSFET N-CH 60V 7.7A TO252-3 |
4,733 | - |
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 7.7A (Ta) | 4.5V, 10V | 40mOhm @ 7.3A, 10V | 3V @ 250µA | 29 nC @ 10 V | ±20V | 1426 pF @ 30 V | - | 2.15W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252-3 |
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SIR878DP-T1-GE3MOSFET N-CH 100V 40A PPAK SO-8 |
2,802 | - |
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TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 4.5V, 10V | 14mOhm @ 15A, 10V | 2.8V @ 250µA | 43 nC @ 10 V | ±20V | 1250 pF @ 50 V | - | 5W (Ta), 44.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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PJD40N15_L2_00001150V N-CHANNEL ENHANCEMENT MODE |
3,815 | - |
|
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 5A (Ta), 40A (Tc) | 10V | 35mOhm @ 20A, 10V | 4V @ 250µA | 52 nC @ 10 V | ±20V | 2207 pF @ 75 V | - | 2W (Ta), 131W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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IXTA08N100D2HV-TRLMOSFET N-CH 1000V 800MA TO263HV |
2,666 | - |
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Depletion | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 1000 V | 800mA (Tj) | 0V | 21Ohm @ 400mA, 0V | 4V @ 25µA | 14.6 nC @ 5 V | ±20V | 325 pF @ 25 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263HV |
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AUIRF6215MOSFET P-CH 150V 13A TO220AB |
2,885 | - |
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HEXFET® | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 150 V | 13A (Tc) | 10V | 290mOhm @ 6.6A, 10V | 4V @ 250µA | 66 nC @ 10 V | ±20V | 860 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFBC40ASTRRPBFMOSFET N-CH 600V 6.2A D2PAK |
4,429 | - |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 42 nC @ 10 V | ±30V | 1036 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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IRL3103D1STRRMOSFET N-CH 30V 64A D2PAK |
2,485 | - |
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- |
FETKY™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 64A (Tc) | - | 14mOhm @ 34A, 10V | 1V @ 250µA | 43 nC @ 4.5 V | - | 1900 pF @ 25 V | - | - | - | - | - | Surface Mount | TO-263 (D2PAK) |
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IRL8113MOSFET N-CH 30V 105A TO220AB |
3,144 | - |
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HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 105A (Tc) | 4.5V, 10V | 6mOhm @ 21A, 10V | 2.25V @ 250µA | 35 nC @ 4.5 V | ±20V | 2840 pF @ 15 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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TSM10ND60CI600V, 10A, SINGLE N-CHANNEL POW |
3,262 | - |
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- |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 600mOhm @ 3A, 10V | 3.8V @ 250µA | 38 nC @ 10 V | ±30V | 1928 pF @ 50 V | - | 56.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ITO-220 |
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TSM10ND65CI650V, 10A, SINGLE N-CHANNEL POW |
4,881 | - |
|
- |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 10A (Tc) | 10V | 800mOhm @ 3A, 10V | 3.8V @ 250µA | 39.6 nC @ 10 V | ±30V | 1863 pF @ 50 V | - | 56.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ITO-220 |
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ISC007N06NM6ATMA1TRENCH 40<-<100V |
3,615 | - |
|
- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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STS12NH3LLMOSFET N-CH 30V 12A 8SO |
4,436 | - |
|
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STripFET™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Tc) | 4.5V, 10V | 10.5mOhm @ 6A, 10V | 1V @ 250µA | 12 nC @ 4.5 V | ±16V | 965 pF @ 25 V | - | 2.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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IRFB17N60KPBFMOSFET N-CH 600V 17A TO220AB |
3,331 | - |
|
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- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 17A (Tc) | 10V | 420mOhm @ 10A, 10V | 5V @ 250µA | 99 nC @ 10 V | ±30V | 2700 pF @ 25 V | - | 340W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |