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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AOM060V75X2Q750V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc. |
330 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 29A (Tc) | 15V | 80mOhm @ 6A, 15V | 3.5V @ 6mA | 39.4 nC @ 15 V | +15V, -5V | 1165 pF @ 400 V | - | 103W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
|
AOK060V75X2Q750V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc. |
240 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 29A (Tc) | 15V | 80mOhm @ 6A, 15V | 3.5V @ 6mA | 39.4 nC @ 15 V | +15V, -5V | 1165 pF @ 400 V | - | 103W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247 |
|
|
AOM065V120X21200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc. |
238 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40.3A (Tc) | 15V | 85mOhm @ 10A, 15V | 3.5V @ 10mA | 62.3 nC @ 15 V | +18V, -8V | 1716 pF @ 800 V | - | 187.5W (Tj) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
|
AOM065V120X2Q1200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc. |
238 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40.3A (Tc) | 15V | 85mOhm @ 10A, 15V | 3.5V @ 10mA | 62.3 nC @ 15 V | +15V, -5V | 1716 pF @ 800 V | - | 187.5W (Ta) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
|
AOK065V65X2MOSFET N-CH 650V 40.3A TO247 Alpha & Omega Semiconductor Inc. |
225 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 40.3A (Tc) | 15V | 85mOhm @ 10A, 15V | 3.5V @ 10mA | 58.8 nC @ 15 V | +15V, -5V | 1762 pF @ 400 V | - | 187.5W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
|
|
AOK065V120X2Q1200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc. |
240 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40.3A (Tc) | 15V | 85mOhm @ 10A, 15V | 3.5V @ 10mA | 62.3 nC @ 15 V | +15V, -5V | 1716 pF @ 800 V | - | 187.5W (Tj) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247 |
|
|
AOK033V120X21200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc. |
208 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 68A (Tc) | 15V | 43mOhm @ 20A, 15V | 2.8V @ 17.5mA | 104 nC @ 15 V | +15V, -5V | 2908 pF @ 800 V | - | 300W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
|
|
AOK065V120X2SILICON CARBIDE MOSFET, ENHANCEM Alpha & Omega Semiconductor Inc. |
118 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40.3A (Tc) | 15V | 85mOhm @ 20A, 15V | 3.5V @ 250µA | 62.3 nC @ 15 V | +18V, -8V | 1716 pF @ 800 V | - | 187.5W (Tj) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
|
|
AOM033V120X2Q1200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc. |
150 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 68A (Tc) | 15V | 43mOhm @ 20A, 15V | 2.8V @ 17.5mA | 104 nC @ 15 V | +18V, -8V | 2908 pF @ 800 V | - | 300W (Tj) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
|
AOM033V120X21200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc. |
234 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 68A (Tc) | 15V | 43mOhm @ 20A, 15V | 2.8V @ 17.5mA | 104 nC @ 15 V | +15V, -5V | 2908 pF @ 800 V | - | 300W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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