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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFBC30SPBFMOSFET N-CH 600V 3.6A D2PAK |
3,758 |
|
- |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 4V @ 250µA | 31 nC @ 10 V | ±20V | 660 pF @ 25 V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
FQA10N80MOSFET N-CH 800V 9.8A TO3P |
4,705 |
|
Tabla de datos |
QFET® | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 9.8A (Tc) | 10V | 1.05Ohm @ 4.9A, 10V | 5V @ 250µA | 71 nC @ 10 V | ±30V | 2700 pF @ 25 V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |
|
IPP06CNE8N GMOSFET N-CH 85V 100A TO220-3 |
4,248 |
|
Tabla de datos |
OptiMOS™ 2 | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 85 V | 100A (Tc) | 10V | 6.5mOhm @ 100A, 10V | 4V @ 180µA | 138 nC @ 10 V | ±20V | 9240 pF @ 40 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
STP80NE03L-06MOSFET N-CH 30V 80A TO220AB |
2,127 |
|
- |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 5V, 10V | 6mOhm @ 40A, 10V | 2.5V @ 250µA | 130 nC @ 5 V | ±22V | 8700 pF @ 25 V | - | 150W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-220 |
|
|
STP13NK50ZMOSFET N-CH 500V 11A TO220AB |
4,894 |
|
Tabla de datos |
SuperMESH™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 11A (Tc) | 10V | 480mOhm @ 6.5A, 10V | 4.5V @ 100µA | 47 nC @ 10 V | ±30V | 1600 pF @ 25 V | - | 140W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
|
IRF840LPBFMOSFET N-CH 500V 8A TO263AB |
4,083 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRFL110MOSFET N-CH 100V 1.5A SOT223 |
3,734 |
|
Tabla de datos |
- | TO-261-4, TO-261AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 1.5A (Tc) | 10V | 540mOhm @ 900mA, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
|
|
IRFL110TRMOSFET N-CH 100V 1.5A SOT223 |
4,422 |
|
Tabla de datos |
- | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 1.5A (Tc) | 10V | 540mOhm @ 900mA, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
|
IRF6611MOSFET N-CH 30V 32A DIRECTFET |
2,905 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 32A (Ta), 150A (Tc) | 4.5V, 10V | 2.6mOhm @ 27A, 10V | 2.25V @ 250µA | 56 nC @ 4.5 V | ±20V | 4860 pF @ 15 V | - | 3.9W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
|
SI7374DP-T1-E3MOSFET N-CH 30V 24A PPAK SO-8 |
2,263 |
|
Tabla de datos |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 24A (Tc) | 4.5V, 10V | 5.5mOhm @ 23.8A, 10V | 2.8V @ 250µA | 122 nC @ 10 V | ±20V | 5500 pF @ 15 V | - | 5W (Ta), 56W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SIE832DF-T1-E3MOSFET N-CH 40V 50A 10POLARPAK |
3,600 |
|
Tabla de datos |
TrenchFET® | 10-PolarPAK® (S) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 4.5V, 10V | 5.5mOhm @ 14A, 10V | 3V @ 250µA | 77 nC @ 10 V | ±20V | 3800 pF @ 20 V | - | 5.2W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 10-PolarPAK® (S) |
|
|
SI7374DP-T1-GE3MOSFET N-CH 30V 24A PPAK SO-8 |
3,209 |
|
Tabla de datos |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 24A (Tc) | 4.5V, 10V | 5.5mOhm @ 23.8A, 10V | 2.8V @ 250µA | 122 nC @ 10 V | ±20V | 5500 pF @ 15 V | - | 5W (Ta), 56W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
|
SI7476DP-T1-GE3MOSFET N-CH 40V 15A PPAK SO-8 |
3,245 |
|
- |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 15A (Ta) | 4.5V, 10V | 5.3mOhm @ 25A, 10V | 3V @ 250µA | 177 nC @ 10 V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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|
PSMN3R5-80ES,127MOSFET N-CH 80V 120A I2PAK |
4,599 |
|
Tabla de datos |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 10V | 3.5mOhm @ 25A, 10V | 4V @ 1mA | 139 nC @ 10 V | ±20V | 9800 pF @ 30 V | - | 338W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | I2PAK |
|
|
PSMN5R0-100ES,127MOSFET N-CH 100V 120A I2PAK |
2,258 |
|
Tabla de datos |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 5mOhm @ 25A, 10V | 4V @ 1mA | 170 nC @ 10 V | ±20V | 9900 pF @ 50 V | - | 338W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | I2PAK |
|
|
PSMN4R3-100ES,127MOSFET N-CH 100V 120A I2PAK |
4,495 |
|
Tabla de datos |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 4.5V, 10V | 4.3mOhm @ 25A, 10V | 4V @ 1mA | 170 nC @ 10 V | ±20V | 9900 pF @ 50 V | - | 338W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | I2PAK |
|
IGLD65R140D2AUMA1GAN HV |
4,699 |
|
- |
CoolGaN™ | 8-LDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 12A (Tc) | - | - | 1.6V @ 1mA | 2.6 nC @ 3 V | -10V | 130 pF @ 400 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-LSON-8-1 |
|
SUP85N10-10P-GE3MOSFET N-CH 100V 85A TO220AB |
2,008 |
|
Tabla de datos |
TrenchFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 85A (Tc) | 10V | 10mOhm @ 20A, 10V | 4.5V @ 250µA | 120 nC @ 10 V | ±20V | 4660 pF @ 50 V | - | 3.75W (Ta), 227W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
SPI70N10LMOSFET N-CH 100V 70A TO262-3 |
2,947 |
|
Tabla de datos |
SIPMOS® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 70A (Tc) | 4.5V, 10V | 16mOhm @ 50A, 10V | 2V @ 2mA | 240 nC @ 10 V | ±20V | 4540 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
|
IXTA1N80MOSFET N-CH 800V 750MA TO263 |
3,709 |
|
- |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 750mA (Tc) | 10V | 11Ohm @ 500mA, 10V | 4.5V @ 25µA | 8.5 nC @ 10 V | ±20V | 220 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263AA |
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