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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF7601TRPBFMOSFET N-CH 20V 5.7A MICRO8 Infineon Technologies |
4,023 |
|
Tabla de datos |
HEXFET® | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 5.7A (Ta) | 2.7V, 4.5V | 35mOhm @ 3.8A, 4.5V | 700mV @ 250µA (Min) | 22 nC @ 4.5 V | ±12V | 650 pF @ 15 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Micro8™ |
|
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IRF7607TRPBFMOSFET N-CH 20V 6.5A MICRO8 Infineon Technologies |
3,517 |
|
Tabla de datos |
HEXFET® | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 6.5A (Ta) | 2.5V, 4.5V | 30mOhm @ 6.5A, 4.5V | 1.2V @ 250µA | 22 nC @ 5 V | ±12V | 1310 pF @ 15 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Micro8™ |
|
IRF7475TRPBFMOSFET N-CH 12V 11A 8SO Infineon Technologies |
3,517 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12 V | 11A (Ta) | 2.8V, 4.5V | 15mOhm @ 8.8A, 4.5V | 2V @ 250µA | 19 nC @ 4.5 V | ±12V | 1590 pF @ 6 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRLR3717TRPBFMOSFET N-CH 20V 120A DPAK Infineon Technologies |
2,032 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 120A (Tc) | 4.5V, 10V | 4mOhm @ 15A, 10V | 2.45V @ 250µA | 31 nC @ 4.5 V | ±20V | 2830 pF @ 10 V | - | 89W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRF7702TRPBFMOSFET P-CH 12V 8A 8TSSOP Infineon Technologies |
3,611 |
|
Tabla de datos |
HEXFET® | 8-TSSOP (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 8A (Tc) | 1.8V, 4.5V | 14mOhm @ 8A, 4.5V | 1.2V @ 250µA | 81 nC @ 4.5 V | ±8V | 3470 pF @ 10 V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-TSSOP |
|
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IRFR12N25DTRPBFMOSFET N-CH 250V 14A DPAK Infineon Technologies |
3,957 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 14A (Tc) | 10V | 260mOhm @ 8.4A, 10V | 5V @ 250µA | 35 nC @ 10 V | ±30V | 810 pF @ 25 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRF7704TRPBFMOSFET P-CH 40V 4.6A 8TSSOP Infineon Technologies |
3,951 |
|
Tabla de datos |
HEXFET® | 8-TSSOP (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 4.6A (Ta) | 4.5V, 10V | 46mOhm @ 4.6A, 10V | 3V @ 250µA | 38 nC @ 4.5 V | ±20V | 3150 pF @ 25 V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-TSSOP |
|
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IRFR3412TRPBFMOSFET N-CH 100V 48A DPAK Infineon Technologies |
2,886 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 48A (Tc) | 10V | 25mOhm @ 29A, 10V | 5.5V @ 250µA | 89 nC @ 10 V | ±20V | 3430 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
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IRF7707TRPBFMOSFET P-CH 20V 7A 8TSSOP Infineon Technologies |
3,578 |
|
Tabla de datos |
HEXFET® | 8-TSSOP (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 7A (Ta) | 2.5V, 4.5V | 22mOhm @ 7A, 4.5V | 1.2V @ 250µA | 47 nC @ 4.5 V | ±12V | 2361 pF @ 15 V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-TSSOP |
|
IRF2804STRR7PPMOSFET N-CH 40V 160A D2PAK Infineon Technologies |
4,229 |
|
Tabla de datos |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 10V | 1.6mOhm @ 160A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 6930 pF @ 25 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
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