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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF3717PBFMOSFET N-CH 20V 20A 8SO Infineon Technologies |
4,782 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 20 V | 20A (Ta) | 4.5V, 10V | 4.4mOhm @ 20A, 10V | 2.45V @ 250µA | 33 nC @ 4.5 V | ±20V | 2890 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
IRF530NSTRRPBFMOSFET N-CH 100V 17A D2PAK Infineon Technologies |
4,416 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100 V | 17A (Tc) | 10V | 90mOhm @ 9A, 10V | 4V @ 250µA | 37 nC @ 10 V | ±20V | 920 pF @ 25 V | - | 3.8W (Ta), 70W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
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IRF630NSTRRPBFMOSFET N-CH 200V 9.3A D2PAK Infineon Technologies |
2,736 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 200 V | 9.3A (Tc) | 10V | 300mOhm @ 5.4A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±20V | 575 pF @ 25 V | - | 82W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
|
IRF7233PBFMOSFET P-CH 12V 9.5A 8SO Infineon Technologies |
2,960 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 9.5A (Ta) | 2.5V, 4.5V | 20mOhm @ 9.5A, 4.5V | 600mV @ 250µA (Min) | 74 nC @ 5 V | ±12V | 6000 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
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AUXHMF7321D2MOSFET P-CH 30V 4.7A 8SO Infineon Technologies |
2,500 |
|
Tabla de datos |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 4.7A (Ta) | 4.5V, 10V | 62mOhm @ 4.9A, 10V | 1V @ 250µA | 34 nC @ 10 V | ±20V | 710 pF @ 25 V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IRF7353D1PBFMOSFET N-CH 30V 6.5A 8SO Infineon Technologies |
4,621 |
|
Tabla de datos |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 6.5A (Ta) | 4.5V, 10V | 32mOhm @ 5.8A, 10V | 1V @ 250µA | 33 nC @ 10 V | ±20V | 650 pF @ 25 V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
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IRF7413ZPBFMOSFET N-CH 30V 13A 8SO Infineon Technologies |
4,601 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta) | 4.5V, 10V | 10mOhm @ 13A, 10V | 2.25V @ 25µA | 14 nC @ 4.5 V | ±20V | 1210 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
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IRF7421D1PBFMOSFET N-CH 30V 5.8A 8SO Infineon Technologies |
4,141 |
|
Tabla de datos |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 5.8A (Ta) | 4.5V, 10V | 35mOhm @ 4.1A, 10V | 1V @ 250µA | 27 nC @ 10 V | ±20V | 510 pF @ 25 V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
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IRF7422D2PBFMOSFET P-CH 20V 4.3A 8SO Infineon Technologies |
4,903 |
|
Tabla de datos |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.3A (Ta) | 2.7V, 4.5V | 90mOhm @ 2.2A, 4.5V | 700mV @ 250µA (Min) | 22 nC @ 4.5 V | ±12V | 610 pF @ 15 V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IRF7433PBFMOSFET P-CH 12V 8.9A 8SO Infineon Technologies |
4,093 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 8.9A (Ta) | 1.8V, 4.5V | 24mOhm @ 8.7A, 4.5V | 900mV @ 250µA | 20 nC @ 4.5 V | ±8V | 1877 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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