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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFR3706MOSFET N-CH 20V 75A DPAK Infineon Technologies |
4,188 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 75A (Tc) | 2.8V, 10V | 9mOhm @ 15A, 10V | 2V @ 250µA | 35 nC @ 4.5 V | ±12V | 2410 pF @ 10 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
IRF3707MOSFET N-CH 30V 62A TO220AB Infineon Technologies |
2,533 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 62A (Tc) | 4.5V, 10V | 12.5mOhm @ 15A, 10V | 3V @ 250µA | 19 nC @ 4.5 V | ±20V | 1990 pF @ 15 V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
IPP70N10S3L12AKSA2MOSFET_(75V 120V( Infineon Technologies |
2,207 |
|
Tabla de datos |
- | TO-220-3 | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 100 V | 70A (Tc) | 4.5V, 10V | 12.1mOhm @ 70A, 10V | 2.4V @ 83µA | 80 nC @ 10 V | ±20V | 5570 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO220-3-1 |
|
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IRL520NPBFMOSFET N-CH 100V 10A TO220AB Infineon Technologies |
4,439 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 10A (Tc) | 4V, 10V | 180mOhm @ 6A, 10V | 2V @ 250µA | 20 nC @ 5 V | ±16V | 440 pF @ 25 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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BSO613SPVGHUMA1MOSFET P-CH 60V 3.44A 8DSO Infineon Technologies |
4,546 |
|
Tabla de datos |
SIPMOS® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 3.44A (Ta) | 10V | 130mOhm @ 3.44A, 10V | 4V @ 1mA | 30 nC @ 10 V | ±20V | 875 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-8 |
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IRFS5615TRLPBFMOSFET N-CH 150V 33A D2PAK Infineon Technologies |
4,022 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 33A (Tc) | 10V | 42mOhm @ 21A, 10V | 5V @ 100µA | 40 nC @ 10 V | ±20V | 1750 pF @ 50 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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BSZ0804LSATMA1MOSFET N-CH 100V 11A/40A TSDSON Infineon Technologies |
3,692 |
|
Tabla de datos |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 11A (Ta), 40A (Tc) | 4.5V, 10V | 9.6mOhm @ 20A, 10V | 2.3V @ 36µA | 15 nC @ 4.5 V | ±20V | 2100 pF @ 50 V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8 FL |
|
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ISC0603NLSATMA1MOSFET N-CH 80V 12.3A/56A TDSON Infineon Technologies |
2,436 |
|
Tabla de datos |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 12.3A (Ta), 56A (Tc) | 4.5V, 10V | 8.9mOhm @ 20A, 10V | 2.3V @ 24µA | 24 nC @ 10 V | ±20V | 1600 pF @ 40 V | - | 2.5W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-6 |
|
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94-4007MOSFET N-CH 30V 35A DPAK Infineon Technologies |
4,426 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Tc) | 4.5V, 10V | 31mOhm @ 21A, 10V | 1V @ 250µA | 26 nC @ 4.5 V | ±16V | 870 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
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IPC173N10N3X1SA1MOSFET N-CH 100V 1A SAWN ON FOIL Infineon Technologies |
2,661 |
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Tabla de datos |
OptiMOS™ | Die | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 3.5V @ 150µA | - | - | - | - | - | - | - | - | Surface Mount | Sawn on foil |
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