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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
R6047ENZ4C13MOSFET N-CH 600V 47A TO247 |
594 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 72mOhm @ 25.8A, 10V | 4V @ 1mA | 145 nC @ 10 V | ±20V | 3850 pF @ 25 V | - | 481W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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|
SCT4062KEC111200V, 62M, 3-PIN THD, TRENCH-ST |
4,717 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 26A (Tc) | 18V | 81mOhm @ 12A, 18V | 4.8V @ 6.45mA | 64 nC @ 18 V | +21V, -4V | 1498 pF @ 800 V | - | 115W | 175°C (TJ) | - | - | Through Hole | TO-247N |
|
NVBG080N120SC1SICFET N-CH 1200V 30A D2PAK-7 |
580 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 20V | 110mOhm @ 20A, 20V | 4.3V @ 5mA | 56 nC @ 20 V | +25V, -15V | 1154 pF @ 800 V | - | 179W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | D2PAK-7 |
|
IXFH32N100XMOSFET N-CH 1000V 32A TO247 |
274 |
|
Tabla de datos |
HiPerFET™, Ultra X | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 32A (Tc) | 10V | 220mOhm @ 16A, 10V | 6V @ 4mA | 130 nC @ 10 V | ±30V | 4075 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
|
SCT4036KW7TL1200V, 40A, 7-PIN SMD, TRENCH-ST |
413 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tj) | 18V | 47mOhm @ 21A, 18V | 4.8V @ 11.1mA | 91 nC @ 18 V | +21V, -4V | 2335 pF @ 800 V | - | 150W | 175°C (TJ) | - | - | Surface Mount | TO-263-7L |
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|
IXFX64N60PMOSFET N-CH 600V 64A PLUS247-3 |
787 |
|
Tabla de datos |
HiPerFET™, Polar | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 64A (Tc) | 10V | 96mOhm @ 500mA, 10V | 5V @ 8mA | 200 nC @ 10 V | ±30V | 12000 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
|
IXTP64N10L2MOSFET N-CH 100V 64A TO220AB |
678 |
|
Tabla de datos |
Linear L2™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 64A (Tc) | 10V | 32mOhm @ 32A, 10V | 4.5V @ 250µA | 100 nC @ 10 V | ±20V | 3620 pF @ 25 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
IXTH68P20TMOSFET P-CH 200V 68A TO247 |
291 |
|
Tabla de datos |
TrenchP™ | TO-247-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 68A (Tc) | 10V | 55mOhm @ 34A, 10V | 4V @ 250µA | 380 nC @ 10 V | ±15V | 33400 pF @ 25 V | - | 568W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
|
UJ3C065030B3MOSFET N-CH 650V 65A TO263 |
4,289 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | - | 650 V | 65A (Tc) | 12V | 35mOhm @ 50A, 12V | 6V @ 10mA | 51 nC @ 15 V | ±25V | 1500 pF @ 100 V | - | 242W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IXTH220N20X4MOSFET N-CH 200V 220A X4 TO-247 |
245 |
|
Tabla de datos |
Ultra X4 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 220A (Tc) | 10V | 5.5mOhm @ 110A, 10V | 4.5V @ 250µA | 157 nC @ 10 V | ±20V | 12300 pF @ 25 V | - | 800W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | ISO TO-247-3 |
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|
IXTH16N50D2MOSFET N-CH 500V 16A TO247-3 |
300 |
|
Tabla de datos |
Depletion | TO-247-3 | Tube | Active | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 500 V | 16A (Tc) | 0V | 240mOhm @ 8A, 0V | - | 199 nC @ 5 V | ±20V | 5250 pF @ 25 V | - | 695W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
|
IXTQ40N50L2MOSFET N-CH 500V 40A TO3P |
390 |
|
Tabla de datos |
Linear L2™ | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 40A (Tc) | 10V | 170mOhm @ 20A, 10V | 4.5V @ 250µA | 320 nC @ 10 V | ±20V | 10400 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |
|
|
IXTQ60N20L2MOSFET N-CH 200V 60A TO3P |
149 |
|
Tabla de datos |
Linear L2™ | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 60A (Tc) | 10V | 45mOhm @ 30A, 10V | 4.5V @ 250µA | 255 nC @ 10 V | ±20V | 10500 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |
|
IXFT50N85XHVMOSFET N-CH 850V 50A TO268 |
1,081 |
|
Tabla de datos |
HiPerFET™, Ultra X | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 850 V | 50A (Tc) | 10V | 105mOhm @ 500mA, 10V | 5.5V @ 4mA | 152 nC @ 10 V | ±30V | 4480 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268HV (IXFT) |
|
E3M0060065K60M 650V SIC AUTOMOTIVE MOSFET |
450 |
|
Tabla de datos |
- | TO-247-4 | Tube | Last Time Buy | N-Channel | SiCFET (Silicon Carbide) | 650 V | 37A (Tc) | 15V | 79mOhm @ 13.2A, 15V | 3.6V @ 3.6mA | 49 nC @ 15 V | +19V, -8V | 1170 pF @ 600 V | - | 131W (Tc) | -40°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
UF3C065030K3SSICFET N-CH 650V 85A TO247-3 |
927 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Cascode SiCJFET) | 650 V | 85A (Tc) | 12V | 35mOhm @ 50A, 12V | 6V @ 10mA | 51 nC @ 15 V | ±25V | 1500 pF @ 100 V | - | 441W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
IXFT15N100Q3MOSFET N-CH 1000V 15A TO268 |
145 |
|
Tabla de datos |
HiPerFET™, Q3 Class | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 15A (Tc) | 10V | 1.05Ohm @ 7.5A, 10V | 6.5V @ 4mA | 64 nC @ 10 V | ±30V | 3250 pF @ 25 V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268AA |
|
VP2206N2MOSFET P-CH 60V 750MA TO39 |
919 |
|
Tabla de datos |
- | TO-205AD, TO-39-3 Metal Can | Bag | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 750mA (Tj) | 5V, 10V | 900mOhm @ 3.5A, 10V | 3.5V @ 10mA | - | ±20V | 450 pF @ 25 V | - | 360mW (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-39 |
|
IXFK80N60P3MOSFET N-CH 600V 80A TO264AA |
651 |
|
Tabla de datos |
HiPerFET™, Polar3™ | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 80A (Tc) | 10V | 70mOhm @ 500mA, 10V | 5V @ 8mA | 190 nC @ 10 V | ±30V | 13100 pF @ 25 V | - | 1300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
|
IXTK102N65X2MOSFET N-CH 650V 102A TO264 |
352 |
|
Tabla de datos |
Ultra X2 | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 102A (Tc) | 10V | 30mOhm @ 51A, 10V | 5V @ 250µA | 152 nC @ 10 V | ±30V | 10900 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 (IXTK) |
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