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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPZ60R040C7XKSA1MOSFET N-CH 600V 50A TO247-4 |
641 |
|
Tabla de datos |
CoolMOS™ C7 | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 10V | 40mOhm @ 24.9A, 10V | 4V @ 1.24mA | 107 nC @ 10 V | ±20V | 4340 pF @ 400 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4 |
|
G3R60MT07D750V 60M TO-247-3 G3R SIC MOSFET |
1,839 |
|
Tabla de datos |
G3R™ | TO-247-3 | Tube | Active | - | SiCFET (Silicon Carbide) | 750 V | - | - | - | - | - | +20V, -10V | - | - | - | - | - | - | Through Hole | TO-247-3 |
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|
IXTH6N50D2MOSFET N-CH 500V 6A TO247 |
220 |
|
Tabla de datos |
Depletion | TO-247-3 | Tube | Active | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 500 V | 6A (Tc) | - | 500mOhm @ 3A, 0V | - | 96 nC @ 5 V | ±20V | 2800 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
|
AUIRF7769L2TRMOSFET N-CH 100V 375A DIRECTFET |
7,817 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric L8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 375A (Tc) | 10V | 3.5mOhm @ 74A, 10V | 4V @ 250µA | 300 nC @ 10 V | ±20V | 11560 pF @ 25 V | - | 3.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric L8 |
|
IXTQ69N30PMOSFET N-CH 300V 69A TO3P |
293 |
|
Tabla de datos |
Polar | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 69A (Tc) | 10V | 49mOhm @ 500mA, 10V | 5V @ 250µA | 180 nC @ 10 V | ±20V | 4960 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |
|
IPW65R035CFD7AXKSA1MOSFET N-CH 650V 63A TO247-3-41 |
1,148 |
|
Tabla de datos |
CoolMOS™ CFD7A | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 63A (Tc) | 10V | 35mOhm @ 35.8A, 10V | 4.5V @ 1.79mA | 145 nC @ 10 V | ±20V | 7149 pF @ 400 V | - | 305W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-3-41 |
|
IXTA60N20X4MOSFET ULTRA X4 200V 60A TO-263 |
751 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 60A (Tc) | 10V | 21mOhm @ 30A, 10V | 4.5V @ 250µA | 33 nC @ 10 V | ±20V | 2450 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (IXTA) |
|
G3R60MT07K750V 60M TO-247-4 G3R SIC MOSFET |
1,151 |
|
Tabla de datos |
G3R™ | TO-247-4 | Tube | Active | - | SiCFET (Silicon Carbide) | 750 V | - | - | - | - | - | +20V, -10V | - | - | - | - | - | - | Through Hole | TO-247-4 |
|
SPW35N60C3FKSA1MOSFET N-CH 650V 34.6A TO247-3 |
131 |
|
Tabla de datos |
CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 34.6A (Tc) | 10V | 100mOhm @ 21.9A, 10V | 3.9V @ 1.9mA | 200 nC @ 10 V | ±20V | 4500 pF @ 25 V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
|
SIHG47N60E-GE3MOSFET N-CH 600V 47A TO247AC |
374 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 64mOhm @ 24A, 10V | 4V @ 250µA | 220 nC @ 10 V | ±30V | 9620 pF @ 100 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
UF4C120053K3S1200V/53MOHM, SIC, FAST CASCODE, |
529 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Cascode SiCJFET) | 1200 V | 34A (Tc) | 12V | 67mOhm @ 20A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1370 pF @ 800 V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
SIHG050N60E-GE3MOSFET N-CH 600V 51A TO247AC |
392 |
|
Tabla de datos |
E | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 51A (Tc) | 10V | 50mOhm @ 23A, 10V | 5V @ 250µA | 130 nC @ 10 V | ±30V | 3459 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
NVH4L080N120SC1SICFET N-CH 1200V 29A TO247-4 |
347 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 29A (Tc) | 20V | 110mOhm @ 20A, 20V | 4.3V @ 5mA | 56 nC @ 20 V | +25V, -15V | 1670 pF @ 800 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
IXFK140N20PMOSFET N-CH 200V 140A TO264AA |
350 |
|
Tabla de datos |
HiPerFET™, Polar | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 140A (Tc) | 10V, 15V | 18mOhm @ 70A, 10V | 5V @ 4mA | 240 nC @ 10 V | ±20V | 7500 pF @ 25 V | - | 830W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
|
IXFH6N120PMOSFET N-CH 1200V 6A TO247AD |
451 |
|
Tabla de datos |
HiPerFET™, Polar | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 6A (Tc) | 10V | 2.4Ohm @ 500mA, 10V | 5V @ 1mA | 92 nC @ 10 V | ±30V | 2830 pF @ 25 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
|
STP34NM60NMOSFET N-CH 600V 29A TO220-3 |
267 |
|
Tabla de datos |
MDmesh™ II | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 105mOhm @ 14.5A, 10V | 4V @ 250µA | 80 nC @ 10 V | ±25V | 2722 pF @ 100 V | - | 250W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
|
|
SCT2280KEGC111200V, 14A, THD, SILICON-CARBIDE |
1,664 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 14A (Tc) | 18V | 364mOhm @ 4A, 18V | 4V @ 1.4mA | 36 nC @ 18 V | +22V, -6V | 667 pF @ 800 V | - | 108W (Tc) | 175°C | - | - | Through Hole | TO-247N |
|
STW12N120K5MOSFET N-CH 1200V 12A TO247 |
1,172 |
|
Tabla de datos |
MDmesh™ K5 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 12A (Tc) | 10V | 690mOhm @ 6A, 10V | 5V @ 100µA | 44.2 nC @ 10 V | ±30V | 1370 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
IMBG65R048M1HXTMA1SILICON CARBIDE MOSFET PG-TO263- |
865 |
|
Tabla de datos |
CoolSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 45A (Tc) | 18V | 64mOhm @ 20.1A, 18V | 5.7V @ 6mA | 33 nC @ 18 V | +23V, -5V | 1118 pF @ 400 V | - | 183W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-12 |
|
|
IXTH110N25TMOSFET N-CH 250V 110A TO247 |
599 |
|
Tabla de datos |
Trench | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 110A (Tc) | 10V | 24mOhm @ 55A, 10V | 4.5V @ 1mA | 157 nC @ 10 V | ±20V | 9400 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
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