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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    SSM6L13TU(T5L,F,T)

    SSM6L13TU(T5L,F,T)

    MOSFET N/P-CH 20V 0.8A UF6

    Toshiba Semiconductor and Storage

    3,972
    RFQ
    SSM6L13TU(T5L,F,T)

    Tabla de datos

    - 6-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate, 1.8V Drive 20V 800mA (Ta) 143mOhm @ 600mA, 4V, 234mOhm @ 600mA, 4V 1V @ 1mA - 268pF @ 10V, 250pF @ 10V 500mW 150°C (TJ) - - Surface Mount UF6
    GWS9294

    GWS9294

    MOSFET 2N-CH 20V 10.1A 4QFN

    Renesas Electronics Corporation

    4,230
    RFQ
    GWS9294

    Tabla de datos

    - 4-VDFN Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain - 20V 10.1A (Ta) 13mOhm @ 6.5A, 4.5V 1.5V @ 1mA 11nC @ 4V 900pF @ 10V 3.6W -55°C ~ 150°C (TJ) - - Surface Mount 4-QFN (2x2)
    EFC2J017NUZTDG

    EFC2J017NUZTDG

    MOSFET 2N-CH 6WLCSP

    onsemi

    4,235
    RFQ

    -

    - 6-XFBGA, WLCSP Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain Logic Level Gate, 2.5V Drive - - - 1.3V @ 1mA 95nC @ 4.5V - 2.5W 150°C (TJ) - - Surface Mount 6-WLCSP (1.77x3.05)
    NTLUD4C26NTBG

    NTLUD4C26NTBG

    MOSFET 2N-CH 30V 9.1A 6UDFN

    onsemi

    3,486
    RFQ
    NTLUD4C26NTBG

    Tabla de datos

    µCool™ 6-UDFN Exposed Pad Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 9.1A (Ta) 21mOhm @ 6A, 10V 1.1V @ 250µA 9nC @ 4.5V 460pF @ 15V 2.63W -55°C ~ 150°C (TJ) - - Surface Mount 6-UDFN (2x2)
    EFC6618R-A-TF

    EFC6618R-A-TF

    MOSFET 2N-CH EFCP

    onsemi

    2,725
    RFQ

    -

    * - Tape & Reel (TR) Active - - - - - - - - - - - - - - -
    FW217A-TL-2WX

    FW217A-TL-2WX

    MOSFET N-CH 35V 8SOIC

    onsemi

    4,167
    RFQ
    FW217A-TL-2WX

    Tabla de datos

    - - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - -
    FW389-TL-2WX

    FW389-TL-2WX

    MOSFET N-CH 100V 8SOIC

    onsemi

    4,660
    RFQ
    FW389-TL-2WX

    Tabla de datos

    - - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - -
    ECH8601M-TL-H-P

    ECH8601M-TL-H-P

    MOSFET 2N-CH 24V 8A 8ECH

    onsemi

    2,796
    RFQ
    ECH8601M-TL-H-P

    Tabla de datos

    - 8-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain Logic Level Gate, 2.5V Drive 24V 8A (Ta) 23mOhm @ 4A, 4.5V 1.3V @ 1mA 7.5nC @ 4.5V - - 150°C (TJ) - - Surface Mount 8-ECH
    BSL806NH6327XTSA1

    BSL806NH6327XTSA1

    MOSFET 2N-CH 20V 2.3A TSOP6-6

    Infineon Technologies

    4,001
    RFQ
    BSL806NH6327XTSA1

    Tabla de datos

    OptiMOS™ SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 1.8V Drive 20V 2.3A (Ta) 57mOhm @ 2.3A, 2.5V 750mV @ 11µA 1.7nC @ 2.5V 259pF @ 10V 500mW -55°C ~ 150°C (TJ) - - Surface Mount PG-TSOP6-6
    FDWS9420-F085

    FDWS9420-F085

    MOSFET 2N-CH 40V 20A 8PQFN

    onsemi

    3,619
    RFQ
    FDWS9420-F085

    Tabla de datos

    - 8-PowerTDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 20A (Tc) 5.8mOhm @ 20A, 10V 4V @ 250µA 43nC @ 10V 2100pF @ 20V 75W -55°C ~ 175°C (TJ) - - Surface Mount 8-PQFN (5x6)
    FC4B22270L1

    FC4B22270L1

    MOSFET 2N-CH ULGA004

    Panasonic Electronic Components

    4,091
    RFQ
    FC4B22270L1

    Tabla de datos

    - 4-XFLGA, CSP Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - - - - 1.4V @ 310µA 9nC @ 4V 910pF @ 10V 1.5W (Ta) 150°C - - Surface Mount ULGA004-W-1313-RA
    FCAB21490L1

    FCAB21490L1

    MOSFET 2N-CH 10SMD

    Panasonic Electronic Components

    4,597
    RFQ
    FCAB21490L1

    Tabla de datos

    - 10-SMD, No Lead Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - - - - 1.4V @ 1.11mA 25nC @ 4V 3570pF @ 10V 3.5W (Ta) 150°C - - Surface Mount 10-SMD
    FCAB21520L1

    FCAB21520L1

    MOSFET 2N-CH 10SMD

    Panasonic Electronic Components

    2,713
    RFQ
    FCAB21520L1

    Tabla de datos

    - 10-SMD, No Lead Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - - - - 1.4V @ 1.64mA 38nC @ 4V 5250pF @ 10V 3.8W (Ta) 150°C - - Surface Mount 10-SMD
    FDMC8298

    FDMC8298

    MOSFET 2N-CH DIE

    onsemi

    3,775
    RFQ

    -

    - Die Tape & Reel (TR) Obsolete - - - - - - - - - - - - - Surface Mount Die
    FDS6982AS_G

    FDS6982AS_G

    MOSFET 2N-CH 30V 6.3A/8.6A 8SO

    onsemi

    2,736
    RFQ

    -

    PowerTrench®, SyncFET™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 6.3A, 8.6A 28mOhm @ 6.3A, 10V, 13.5mOhm @ 8.6A, 10V 3V @ 250µA, 3V @ 1mA 9nC @ 5V, 16nC @ 5V 610pF @ 10V, 1250pF @ 10V 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    FDS8958B_G

    FDS8958B_G

    MOSFET N/P-CH 30V 6.4A/4.5A 8SO

    onsemi

    3,353
    RFQ

    -

    PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel - 30V 6.4A, 4.5A 26mOhm @ 6.4A, 10V, 51mOhm @ 4.5A, 10V 3V @ 250µA 5.8nC @ 4.5V, 9.6nC @ 4.5V 540pF @ 15V, 760pF @ 15V 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    FDC6301N_G

    FDC6301N_G

    MOSFET 2N-CH 25V 0.22A SSOT6

    onsemi

    3,560
    RFQ

    -

    - SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 25V 220mA 4Ohm @ 400mA, 4.5V 1.5V @ 250µA 0.7nC @ 4.5V 9.5pF @ 10V 700mW -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-6
    FF11MR12W1M1B11BOMA1

    FF11MR12W1M1B11BOMA1

    MOSFET 2N-CH 1200V 100A MODULE

    Infineon Technologies

    2,740
    RFQ
    FF11MR12W1M1B11BOMA1

    Tabla de datos

    CoolSiC™+ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 100A 11mOhm @ 100A, 15V 5.55V @ 40mA 250nC @ 15V 7950pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount Module
    2N7002BKS/ZLX

    2N7002BKS/ZLX

    MOSFET 2N-CH 60V 0.3A 6TSSOP

    Nexperia USA Inc.

    4,021
    RFQ
    2N7002BKS/ZLX

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 300mA (Ta) 1.6Ohm @ 500mA, 10V 2.1V @ 250µA 0.6nC @ 4.5V 50pF @ 10V 1.04W 150°C (TJ) - - Surface Mount 6-TSSOP
    2N7002PS/ZLH

    2N7002PS/ZLH

    MOSFET 2N-CH 60V 0.32A 6TSSOP

    Nexperia USA Inc.

    3,882
    RFQ
    2N7002PS/ZLH

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 320mA (Ta) 1.6Ohm @ 500mA, 10V 2.4V @ 250µA 0.8nC @ 4.5V 50pF @ 10V 990mW 150°C (TJ) - - Surface Mount 6-TSSOP
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